Kinetic influences on void formation in epitaxially regrown GaAs-Based PCSELs

McKenzie, Adam F.; Kyaw, Aye M.; Gerrard, Neil D.; MacLaren, Donald A.; Hogg, Richard A.

doi:10.1016/j.jcrysgro.2022.126969

Cited by 5 publications

(1 citation statement)

References 22 publications

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“…Thanks to the symmetry of the unit cell, the two orthogonal X directions are equivalent and two of the lowest energy modes with the lowest thresholds, of course, retain the same symmetry. The symmetry between two orthogonal X-directions can be broken, for instance, due to known difference between regrowth rates on two 110 crystalline directions terminated with either group III or group V atoms [10]. Figure 4 plots calculated band structure of the photonic crystal with modified shape of the air pocket (right triangle with one of the legs of shorter length) in two orthogonal X-directions.…”

Section: Characterization Results and Discussionmentioning

confidence: 99%

Continuous wave room temperature operation of the GaSb-based photonic crystal surface emitting diode lasers

Shterengas,

Lee,

Liu

et al. 2024

Novel in-Plane Semiconductor Lasers XXIII

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We report on the continuous wave (CW) room temperature operation of epitaxially regrown monolithic GaSb-based photonic crystal surface emitting diode lasers (PCSEL) with ≈ λ 2 µm. The devices are based on laser heterostructure containing carrier stopper layer designed to inhibit electron leakage into buried photonic-crystal section. Atomic hydrogen cleaning of the nanopatterned surface followed by optimized epitaxial step resulted in highly uniform air-pocket-retaining regrowth. The increase of the number of air-pockets in unit cells of the buried photonic crystal layer led to enhancement of the PCSEL output power and improvement of the far field pattern The PCSELs with buried high-index-contrast photonic crystal utilizing four air-pockets per unit cell generated 30 mW of continuous wave power from 200 µm diameter aperture.

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Section: Characterization Results and Discussionmentioning

confidence: 99%

Continuous wave room temperature operation of the GaSb-based photonic crystal surface emitting diode lasers

Shterengas,

Lee,

Liu

et al. 2024

Novel in-Plane Semiconductor Lasers XXIII

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Progress in analytical solutions for high order harmonic generation in semiconductor superlattice multipliers

Al-Ateqi,

Pereira

2023

Opt Quant Electron

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Resonator embedded photonic crystal surface emitting lasers

Bian,

Zhao,

Liu

et al. 2024

npj Nanophoton.

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The finite size of 2D photonic crystals results in them being a lossy resonator, with the normally emitting modes of conventional photonic crystal surface emitting lasers (PCSELs) differing in photon lifetime via their different radiative rates, and the different in-plane losses of higher order spatial modes. As a consequence, the fundamental spatial mode (lowest in-plane loss) with lowest out-of-plane scattering is the primary lasing mode. For electrically driven PCSELs, as current is increased, incomplete gain clamping results in additional spatial (and spectral) modes leading to a reduction in beam quality. A number of approaches have been discussed to enhance the area (power) scalability of epitaxy regrown PCSELs through careful design of the photonic crystal atom1–3. None of these approaches tackle the inflexibility in being unable to independently modify the photon lifetime of the different modes at the Γ2 point. As a method to introduce design flexibility, resonator embedded photonic crystal surface emitting lasers (REPCSELs) are introduced. This device, combining comparatively low coupling strength photonic crystal structures along with perimeter mirrors, allow a Fabry–Pérot resonance effect to be realised that provides wavelength selective modification of the photon lifetime. We show that surface emission of different surface emitting modes may be selectively enhanced, effectively changing the character of the modes at the Γ2 point. This is a consequence of the selective modification of in-plane loss for particular modes, and is dependent upon the alignment of the photonic crystal (PhC) band-structure and distributed Bragg reflectors’ (DBRs) reflectance spectrum. These findings offer new avenues in surface emitting laser diode engineering. The use of DBRs to reduce the lateral size of a PCSEL opens the route to small, low threshold current (Ith), high output efficiency epitaxy regrown PCSELs for high-speed communication and power sensitive sensing applications.

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Kinetic influences on void formation in epitaxially regrown GaAs-Based PCSELs

Cited by 5 publications

References 22 publications

Continuous wave room temperature operation of the GaSb-based photonic crystal surface emitting diode lasers

Continuous wave room temperature operation of the GaSb-based photonic crystal surface emitting diode lasers

Progress in analytical solutions for high order harmonic generation in semiconductor superlattice multipliers

Resonator embedded photonic crystal surface emitting lasers

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