Kinetic etch front instability responsible for roughness formation in plasma etching

Jiang, Xiaolong; Wu, Lixiang; Yang, Ke; Liu, Taixiang; Liao, Wei; Zhang, Chuanchao; Zhang, Lijuan; Liu, Ying; Jiang, Xiaodong

doi:10.1016/j.apsusc.2020.148862

Cited by 6 publications

(3 citation statements)

References 37 publications

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“…Plasma activation of polymers is mainly aimed at changing their wettability, achieving the required adhesion and cleaning the surface, which is achieved by changing the chemical structure through functionalization with oxygen-containing functional groups and changing the roughness through etching or ion bombardment [21,[34][35][36]. The type of functional groups generated on the polymer surface depends on the gas used for plasma activation [20,37]).…”

Section: Introductionmentioning

confidence: 99%

Study of Argon and Oxygen Mixtures in Low Temperature Plasma for Improving PLA Film Wettability

Izdebska‐Podsiadły

2023

Coatings

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Oxygen (O2) and argon (Ar) plasma give a significant improvement in the wettability of PLA films. This study investigates the effectiveness of plasma activation with a mixture of these two gases. The study includes contact angle measurements with water and diiodomethane and calculation of surface free energy (SFE) together with its polar and dispersion components. In addition, a chemical analysis of the surface, surface roughness, weight loss and the change in tensile strength were examined. As a result of the study, it was found that the use of a mixture of oxygen and argon during the plasma activation of the polylactide film gives better improvement in wettability than the use of pure gases. Moreover, the use of a mixture of these gases in equal proportions turned out to be the most effective, providing the highest value of the SFE and its polar component, as well as the lowest value of the water contact angle. Furthermore, plasma activation with this gas mixture results in reduced surface etching compared to other gas compositions, which manifests itself in lower weight reduction and an insignificant change in tensile strength.

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Section: Introductionmentioning

confidence: 99%

Study of Argon and Oxygen Mixtures in Low Temperature Plasma for Improving PLA Film Wettability

Izdebska‐Podsiadły

2023

Coatings

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“…The Monte Carlo method is an atomic simulation method, which can effectively simulate etch rates and etch structures [18,[20][21][22][23][24]. According to the simplified atomic structure, the literature [18] proposed a six indices classification method (n G 1s , n G 1b , n R 1s , n R 1b , n 2s , n 2b ) to classify the kinds of surface atoms.…”

Section: Introductionmentioning

confidence: 99%

Optimization of the Monte Carlo Simulation for Sapphire in Wet Etching

Qian

et al. 2023

Coatings

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In this paper, the Monte Carlo simulation for sapphire in wet etching is optimized, which improves the accuracy and efficiency of simulated results. Firstly, an eight-index classification method is proposed to classify the kinds of surface atoms, which can make assigned removal probabilities more accurately for surface atoms. Secondly, based on the proposed classification method of surface atoms, an extended removal probability equation (E-RPE) is proposed, which makes the errors between simulated and experimental rates smaller and greatly improves the accuracy of the simulated result of the etch rate distribution under the experimental condition (H2SO4:H3PO4 = 3:1, 236 °C). Thirdly, a modified removal probability equation (ME-RPE) considering the temperature dependence is proposed based on the error analysis between the simulated and experimental rates under different temperature conditions, which can simulate etch rates under the different temperature conditions through a group of optimized energy parameters and improve the simulation efficiency. Finally, small errors between the simulated and experimental rates under the different temperature conditions (H2SO4:H3PO4 = 3:1, 202 °C and 223 °C) verify the validity of the ME-RPE for temperature change. The optimization methods for the Monte Carlo simulation of sapphire in wet etching proposed in this paper will provide a reference for the simulation of other crystal materials.

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“…Jin [7] proposed that the deteriorated surface morphology caused by fluorocarbon films deposited during the atmospheric plasma etching process, and the addition of O2 flow is proposed to inhibit the deposition of fluorocarbons. Jiang [8] suggested that due to the mismatch binding energy between the inhibitor particles and the substrate the inhibitor particles preferentially bond to each other and form large particles, which were deposited on the surface, resulting in the deterioration of surface topography. Chen [9,10] proposed that the fluorocarbon particles as micromasks during the plasma etching are deposited on the surface, and the ion beam is reflected on the micro-mask wall to produce an etching enhancement effect, which induces the deteriorated surface morphology.…”

Section: Introductionmentioning

confidence: 99%

Improved the laser-induced damage threshold of fused silica by atmospheric pressure plasma processing

Chen,

Wang,

Wei

et al. 2023

Pacific-Rim Laser Damage 2023: Optical Materials for High-Power Lasers

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Kinetic etch front instability responsible for roughness formation in plasma etching

Cited by 6 publications

References 37 publications

Study of Argon and Oxygen Mixtures in Low Temperature Plasma for Improving PLA Film Wettability

Study of Argon and Oxygen Mixtures in Low Temperature Plasma for Improving PLA Film Wettability

Optimization of the Monte Carlo Simulation for Sapphire in Wet Etching

Improved the laser-induced damage threshold of fused silica by atmospheric pressure plasma processing

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