Kinetic Energy and Phase Separation in a Doped Antiferromagnet

Xin, Xu; Song, Yaru; Feng, Shiping

doi:10.1142/s0217984995001625

Cited by 5 publications

(4 citation statements)

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“…V [130] Zr [133] Se [132] …… InP [131] C [125] N [107] O [108] Si [110] B [115] Sn [117] In [119] Ag [112] Al [123] Zn [116] Cr [114] O(N) [109] S [111] Pd [113] Fe [116] Bi(B) [118] H [120] Ga [121] Mo [122] Ti [124] Ce [126] Mn [127] Mg [128] Bi [129] BN [134] O [192] Si [184][185][186] In [170,171] Ag [172,173] Al [174][175][176][177] Cr [193,194] Ge [166][167][168] Au [169] (Y,Sc ) [201] TiO 2 [198] SiN ...…”

Section: Gesbtementioning

confidence: 99%

Universal memory based on phase-change materials: From phase-change random access memory to optoelectronic hybrid storage*

Liu

Wei

et al. 2021

Chinese Phys. B

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The era of information explosion is coming and information need to be continuously stored and randomly accessed over long-term periods, which constitute an insurmountable challenge for existing data centers. At present, computing devices use the von Neumann architecture with separate computing and memory units, which exposes the shortcomings of “memory bottleneck”. Nonvolatile memristor can realize data storage and in-memory computing at the same time and promises to overcome this bottleneck. Phase-change random access memory (PCRAM) is called one of the best solutions for next generation non-volatile memory. Due to its high speed, good data retention, high density, low power consumption, PCRAM has the broad commercial prospects in the in-memory computing application. In this review, the research progress of phase-change materials and device structures for PCRAM, as well as the most critical performances for a universal memory, such as speed, capacity, and power consumption, are reviewed. By comparing the advantages and disadvantages of phase-change optical disk and PCRAM, a new concept of optoelectronic hybrid storage based on phase-change material is proposed. Furthermore, its feasibility to replace existing memory technologies as a universal memory is also discussed as well.

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Section: Gesbtementioning

confidence: 99%

Universal memory based on phase-change materials: From phase-change random access memory to optoelectronic hybrid storage*

Liu

Wei

et al. 2021

Chinese Phys. B

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“…[ 9–15 ] Although this technology has demonstrated a lot of potential, issues like reducing power usage are currently being addressed. Researchers have focused on minimizing the power consumption in the PCM device by restructuring device geometry, [ 7,16,17 ] modifying material composition [ 18,19 ] and mitigating heat loss by incorporating an interfacial layer like TiO 2 , [ 20,21 ] HfO 2 , [ 22–24 ] Ta 2 O 5 , [ 25 ] Bi 2 Te 3 , [ 26 ] MoS 2 , [ 27 ] and graphene [ 28 ] below the phase change layer in the PCM device. Hafnium oxide (HfO 2 ) offers both structural stability and high resistivity.…”

Section: Introductionmentioning

confidence: 99%

Low‐Power Crystallization Process in In₃SbTe₂ Phase Change Memory Devices with Thin Oxide Layer

Pathak,

Pandey

2024

Physica Status Solidi (b)

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Phase change memory (PCM) technology is a strong contender for the next‐generation memory in today's data‐centric era. In3SbTe2 (IST) phase change material is recently explored due to its good thermal stability, rapid electrical switching, and significant resistance contrast for multibit storage. However, the main concern in PCM devices is the high‐energy usage during the phase switching process. Herein, a thin oxide (HfO2) layer is inserted between the IST active layer and bottom electrode in PCM device. Such a device exhibits amorphous‐to‐crystalline phase switching (crystallization or SET operation) at a lower voltage of (2.1 ± 0.1) V and 66% reduction in energy consumption compared to the device using only IST active layer. Higher temperature of 688 K is acquired in the device with the oxide layer demonstrating that the Joule heat is effectively confined by the oxide layer assisting the crystallization process in the active layer at a less voltage. Such a device also exhibits a significant resistance contrast of ≈2 orders magnitude, allowing for stable data storage. These results reveal that the switching performance of PCM device using IST phase change material is improved by the oxide layer, which is beneficial for energy‐efficient, nonvolatile data storage applications.

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“…Phase-change random access memory (PRAM) is one of the most promising candidates for the non-volatile memories in the next generation. 1,2 The advantages of PRAM are the fast read/write speed, large capacitance, low power consumption, good cycle ability and easy integration process. [1][2][3][4] Fast and reversible structural change of PRAM is corresponding to large resistance change between the two states, which are the conversion from a highly resistive (amorphous) to conducting (crystalline) state by heating and cooling of the material with a current/voltage pulse.…”

mentioning

confidence: 99%

“…1,2 The advantages of PRAM are the fast read/write speed, large capacitance, low power consumption, good cycle ability and easy integration process. [1][2][3][4] Fast and reversible structural change of PRAM is corresponding to large resistance change between the two states, which are the conversion from a highly resistive (amorphous) to conducting (crystalline) state by heating and cooling of the material with a current/voltage pulse. [1][2][3][4][5] This switching can be used for read and write operations in PRAM device.…”

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confidence: 99%

Effect of CMP on the Te Segregation in Ge₂Sb₂Te₅Films

Shin

Lee

Jeong

et al. 2012

J. Electrochem. Soc.

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The surface characteristics of a Ge 2 Sb 2 Te 5 chalcogenide layer after the chemical mechanical polishing (CMP) process was examined by X-ray diffraction, Auger electron microscopy and optical profiling to identify the dominant CMP mechanism of the new memory material. The platen speeds and applied pressure were varied up to 60 m/s and 4 psi, respectively, to understand the CMP variable effect on the surface quality of Ge 2 Sb 2 Te 5 layer. The amount of Te hillock and surface roughness increased with increasing platen speed and applied pressure of CMP. Te segregation was the main cause of the increasing surface roughness. Stress and thermal effects were observed through the CMP-induced phase transformation from FCC to HCP and Te segregation. The surface properties of the Ge 2 Sb 2 Te 5 thin films showed a strong correlation with phase transformation and Te segregation. The results show that the surface quality can be improved by reducing the platen speed and pressure.

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Kinetic Energy and Phase Separation in a Doped Antiferromagnet

Cited by 5 publications

References 0 publications

Universal memory based on phase-change materials: From phase-change random access memory to optoelectronic hybrid storage*

Universal memory based on phase-change materials: From phase-change random access memory to optoelectronic hybrid storage*

Low‐Power Crystallization Process in In₃SbTe₂ Phase Change Memory Devices with Thin Oxide Layer

Effect of CMP on the Te Segregation in Ge₂Sb₂Te₅Films

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Kinetic Energy and Phase Separation in a Doped Antiferromagnet

Cited by 5 publications

References 0 publications

Universal memory based on phase-change materials: From phase-change random access memory to optoelectronic hybrid storage*

Universal memory based on phase-change materials: From phase-change random access memory to optoelectronic hybrid storage*

Low‐Power Crystallization Process in In3SbTe2 Phase Change Memory Devices with Thin Oxide Layer

Effect of CMP on the Te Segregation in Ge2Sb2Te5Films

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Low‐Power Crystallization Process in In₃SbTe₂ Phase Change Memory Devices with Thin Oxide Layer

Effect of CMP on the Te Segregation in Ge₂Sb₂Te₅Films