Kinetic control of silicon carbide/metal reactions

Park, J.S.; Landry, K.; Perepezko, J. H.

doi:10.1016/s0921-5093(98)00899-5

Cited by 92 publications

(37 citation statements)

References 18 publications

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“…refs. Backhaus-Ricoult, 1992;Bhanumurthy & SchmidFetzer, 2001;Park, 1999). In the reaction zone, it has been observed that the diffusion couple shows alternating layers of C and Ni-silicides (900C, 24 h or 40 h) (Bhanumurthy & SchmidFetzer, 2001;Park et al, 1999), or alternating silicide bands and silicide bands with embedded C (950C, 1.5 h) (Backhaus-Ricoult, 1992).…”

Section: Bulk Ni-sic Diffusion Couplementioning

confidence: 99%

“…Backhaus-Ricoult, 1992;Bhanumurthy & SchmidFetzer, 2001;Park, 1999). In the reaction zone, it has been observed that the diffusion couple shows alternating layers of C and Ni-silicides (900C, 24 h or 40 h) (Bhanumurthy & SchmidFetzer, 2001;Park et al, 1999), or alternating silicide bands and silicide bands with embedded C (950C, 1.5 h) (Backhaus-Ricoult, 1992). From the back-scattered electron imaging (BSE) (Park et al, 1999) of a Ni/SiC reaction couple annealed at 900°C for 40 h, the sequence of phases in bulk diffusion couples was observed to be Ni/Ni 3 Si/Ni 5 Si 2 +C/Ni 2 Si +C/SiC.…”

Section: Bulk Ni-sic Diffusion Couplementioning

confidence: 99%

“…Schematic BSE image of SiC/Ni reaction couple annealed at 900°C for 40 h (Park et al, 1999) The formation mechanism of periodic bands is not very clear, but it is generally accepted that it depends on the diffusivities of the reacting elements. Metal is the most dominant diffusing species and C atoms are practically immobile (Bhanumurthy & Schmid-Fetzer, 2001;Park et al, 1999). After the formation of silicide, the Ni concentration at the SiC reaction interface decreases [Chou et al, 1990].…”

Section: Bulk Ni-sic Diffusion Couplementioning

confidence: 99%

See 2 more Smart Citations

Contact Formation on Silicon Carbide by Use of Nickel and Tantalum in a Materials Science Point of View

Cao¹,

Nyborg²

2011

Properties and Applications of Silicon Carbide

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Section: Bulk Ni-sic Diffusion Couplementioning

confidence: 99%

Section: Bulk Ni-sic Diffusion Couplementioning

confidence: 99%

Section: Bulk Ni-sic Diffusion Couplementioning

confidence: 99%

See 1 more Smart Citation

Contact Formation on Silicon Carbide by Use of Nickel and Tantalum in a Materials Science Point of View

Cao¹,

Nyborg²

2011

Properties and Applications of Silicon Carbide

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“…The reaction products formed at the interface and the interface morphology of metal/SiC reaction zone is dependent on the metal in contact with SiC [17]. For example, refractory metals form carbides and silicide when in contact with SiC since they are strong carbide forming metals [18].…”

Section: Resultsmentioning

confidence: 99%

Kinetics of solid-state reactions between zirconium thin film and silicon carbide at elevated temperatures

Njoroge¹,

Theron²,

Malherbe³

et al. 2014

Nuclear Instruments and Methods in Physics Research Section B:

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Solid state reactions between a thin film (133 nm) of Zr and bulk single crystalline 6H-SiC substrates have been studied at temperatures between 600 °C and 850 °C for durations of 30, 60 and 120 min under high vacuum conditions. The deposited film and reaction zones were investigated by Rutherford backscattering spectrometry (RBS) and X-ray diffraction. The RBS spectra were simulated in order to obtain the deposited layer thickness, reaction zone compositions and reaction zone thickness. The as-deposited spectra fit well with those annealed at 600 °C, thus showing there were no reactions taking place. At temperatures of 700 °C and above, Zr reacted with the SiC substrate and formed a mixed layer of Zr carbide (ZrC x ) and Zr silicides (ZrSi, Zr 2 Si and Zr 5 Si 3 ). Annealing at 850 °C for 240 min revealed that all the deposited Zr had completely reacted. The interface reaction follows the parabolic growth law thereby indicating diffusion controlled reaction kinetics. The activation energy for the diffusion process obtained was 1.6 eV in the relatively narrow temperature range 700-850 °C.

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“…6. The products sequence is found as SiC/Ni2Si+C/Ni~Si2 +C/Ni3Si/Ni [16]. The reaction pathway of the SiC/Ni (type I) is indicated on the schematic isothermal phase diagram as solid arrows (Fig.…”

Section: Sic/x(i) Interface Reactionsmentioning

confidence: 99%

Strategies for designing composite materials for high temperature application

Park

Perepezko

1999

Metals and Materials

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A clear understanding of the factors controlling reproducible composite processing is critical for high temperature application. One approach to obtain stable phase combinations (i.e. compatibility) is to use a controlled interface reaction (in-situ layer design). An effective approach to control the reaction products and diffusion pathway by adding an extra component layer has been practiced and analyzed based upon the relative component fluxes. At the same time, the observed diffusion pathway has been examined in terms of a chemical potential framework, which can provide in assistance interpreting kinetic data in multicomponent systems. While component chemical potential values can increase and decrease through the interdiffusion reaction layers, the total free energy value will be decreased during the interdiffusion reaction. In order to examine the operating principles involved in the synthesis of in-situ composites, model ternary systems including potential materials such as TiAI and SiC have been investigated.

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Kinetic control of silicon carbide/metal reactions

Cited by 92 publications

References 18 publications

Contact Formation on Silicon Carbide by Use of Nickel and Tantalum in a Materials Science Point of View

Contact Formation on Silicon Carbide by Use of Nickel and Tantalum in a Materials Science Point of View

Kinetics of solid-state reactions between zirconium thin film and silicon carbide at elevated temperatures

Strategies for designing composite materials for high temperature application

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