“…For the same chemical class, the method of adiabatic compression is used to avoid the thermal degradation at hot surfaces [22]. Thermogravimetric analyses within vacuum [23][24][25][26] as well as the analysis of different catalysts [27] are also widespread. A test rig designed especially for measurements of ORC working fluids, and in particular of methylbenzenes, is reported by Angelino et al [28].…”
“…For the same chemical class, the method of adiabatic compression is used to avoid the thermal degradation at hot surfaces [22]. Thermogravimetric analyses within vacuum [23][24][25][26] as well as the analysis of different catalysts [27] are also widespread. A test rig designed especially for measurements of ORC working fluids, and in particular of methylbenzenes, is reported by Angelino et al [28].…”
“…The 29 Si NMR analyses demonstrate the dehydrocoupling reaction of PMHS, and the shift of signal from 234.94 to 248.34 ppm reflects that SiÀ ÀH groups change into methoxy groups.…”
Section: Characterization Of the Synthesis Of Pmosmentioning
confidence: 94%
“…In this investigation, polymethoxylsiloxane (PMOS) with dense pendant methoxy groups was synthesized from cyclosiloxane monomers by ring-opening polymerization and dehydrocoupling reaction, then the crosslinking reaction took place with moisture via hydrolyzation and condensation to form in-situ reinforcing phases (Schemes 1 and 2), which were confirmed by IR spectroscopy and 29 Si NMR analyses. And the apparent activation energy of crosslink reaction was calculated.…”
Polymethoxylsiloxane (PMOS) with dense pendant silicone-methoxy groups was synthesized from cyclosiloxane monomers by ring-opening polymerization and dehydrocoupling reaction. Synthesis reactions were followed by IR spectroscopy and 29 Si NMR analyses. PMOS was used as crosslinking reagent for room temperature vulcanized polydimethylsiloxane (PDMS), and the apparent activation energy for crosslink reaction was 3.92 kJ/mol. TEM study shows that many dispersed high crosslink density PMOS phases were formed in siloxane elastomer as well as the PDMS networks, and the crosslink density increased from PDMS networks to PMOS phases gradually, without a clear interface. It was detected that these PMOS phases improved the thermal and mechanical properties of siloxane elastomer significantly because of their in-situ microscale improvement effect. TG analysis demonstrated that thermal decomposition process of PMOS crosslinked siloxane elastomer was divided into three stages, the second one corresponding to a possible loss of some new structures, and the residual mass at 5008C was 66 wt %. The crosslink density went up as the loading of PMOS increased. Tensile stress and elastic module increased twice and three times, respectively, when the PMOS content increased from 15.1 to 41.6 wt %.
“…However, by increasing the heating rate, a remarkable shift of the onset of the degradation process is observed at temperatures higher than 200 °C, thus increasing the processing window for the self-assembly and ordering of PS-b-PDMS block copolymers. [69,76].…”
Section: Next Generation Thermal Annealing Methodsmentioning
confidence: 99%
“…In principle, thermal treatments in furnace at high temperatures could speed up the ordering kinetics. However, the maximum processing temperature is severely limited by the low thermal stability of the PDMS segment [76]. In fact, thermal treatments of PS-b-PDMS thin films in conventional furnace under vacuum are conducted at temperatures lower than 200 °C [58,77,78].…”
The continuous demand for small portable electronics is pushing the semiconductor industry to develop novel lithographic methods to fabricate the elementary structures for microelectronics devices with dimensions below 10 nm. Topdown strategies include multiple patterning photolithography, extreme ultraviolet lithography (EUVL), electron beam lithography (EBL), and nanoimprint lithography. Bottom-up approaches mainly rely on block copolymers (BCPs) self-assembly (SA). SA of BCPs is extremely appealing due to its excellent compatibility with conventional photolithographic processes, high-resolution patterns, and low process costs. Among the various BCPs, the polystyrene-b-polydimethylsiloxane (PS-b-PDMS) represents the most investigated material for the fabrication of sub-10 nm structures. However, PS-b-PDMS cannot be easily processed by conventional thermal treatments due to its slow SA kinetic coupled with a relatively low thermal stability. This review focuses on the available annealing methods to promote the SA PS-b-PDMS in parallel-oriented cylindrical sub-10 nm structures. Moreover, literature data regarding the annealing time, defects density, line edge roughness (LER) and line width roughness (LWR) are discussed with reference to the stringent requirements of semiconductor technology.
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