Key directions and a roadmap for electrical design for manufacturability

Kahng,

doi:10.1109/essderc.2007.4430885

Cited by 12 publications

(4 citation statements)

References 22 publications

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“…The operating principle of POFETs is quite similar to MOSFETs, except that the channel in POFETs is formed by the accumulation of charge carriers at the insulator/semiconductor (I/S) interface, whereas, the channel in MOSFETs is formed by the depletion of charge carriers. [ 14 ] A POFET operates as a voltage‐controlled current source, wherein the application of a bias between the gate and source electrodes ( V GS ) results in the accumulation of a sheet of mobile charge carriers near the I/S interface that allows current flow through the active layer upon applying a suitable bias between the source and drain electrodes ( V DS ). The current in the channel between the source and drain electrodes is known as the drain current, I D .…”

Section: Organic Field‐effect Transistorsmentioning

confidence: 99%

“…The idea of a FET was initially proposed by Lilienfield in 1930, [ 13 ] while the first report on metal–oxide–semiconductor FET (MOSFET) was published by Kahng and Atalla in 1960. [ 14 ] MOSFET forms the backbone of virtually all mobile communication chips, solid‐state memories (NAND Flash, dynamic random access memory, among others), active‐matrix displays, microprocessors, and graphics adapters in the mainstream semiconductor industry, and numerous other electronic applications. Later, this concept was extended to hydrogenated‐amorphous‐silicon (a‐Si:H)‐based thin‐film transistors (TFTs), [ 15 ] which are presently widely employed as the pixel drive devices in active‐matrix liquid‐crystal displays on glass substrates.…”

Section: Introductionmentioning

confidence: 99%

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Impact of Planar and Vertical Organic Field‐Effect Transistors on Flexible Electronics

et al. 2023

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According to the forecast of Allied Market Research, the flexible electronics market is projected to reach $42.48 billion by 2027. It is estimated to revolutionize the lighting technology, power integration displays, and health monitoring systems. The popularity of flexible electronics is mainly due to the unique benefits of organic materials and devices that offer cost-effectiveness, low-temperature processability, mechanical softness, and shape adaptability, [5][6][7] which are difficult to obtain with traditional, complementary-metal-oxide-semiconductor (CMOS)-based rigid systems. [8] Over the past two decades, research interest in flexible electronic systems has grown exponentially, driven by the requirements of interface softness and shape adaptability for electronics used in Internet-of-Things (IoT), [9] human-machine interfaces, [10] and advanced healthcare. [11] Although significant progress has been made in academia, the practical application of flexible electronics in the industry is limited. Presently, thin-film photovoltaics and flexible displays mainly contribute to the flexible electronics market, with a noticeable presence held by radio frequency identification (RFID) tags and medical X-ray imagers. [12] Indeed, much of the success of present flexible electronic systems rely on the performance and reliability of thin-film The development of flexible and conformable devices, whose performance can be maintained while being continuously deformed, provides a significant step toward the realization of next-generation wearable and e-textile applications. Organic field-effect transistors (OFETs) are particularly interesting for flexible and lightweight products, because of their low-temperature solution processability, and the mechanical flexibility of organic materials that endows OFETs the natural compatibility with plastic and biodegradable substrates. Here, an in-depth review of two competing flexible OFET technologies, planar and vertical OFETs (POFETs and VOFETs, respectively) is provided. The electrical, mechanical, and physical properties of POFETs and VOFETs are critically discussed, with a focus on four pivotal applications (integrated logic circuits, light-emitting devices, memories, and sensors). It is pointed out that the flexible function of the relatively newer VOFET technology, along with its perspective on advancing the applicability of flexible POFETs, has not been reviewed so far, and the direct comparison regarding the performance of POFET-and VOFET-based flexible applications is most likely absent. With discussions spanning printed and wearable electronics, materials science, biotechnology, and environmental monitoring, this contribution is a clear stimulus to researchers working in these fields to engage toward the plentiful possibilities that POFETs and VOFETs offer to flexible electronics.

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Section: Organic Field‐effect Transistorsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Impact of Planar and Vertical Organic Field‐Effect Transistors on Flexible Electronics

et al. 2023

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“…[ 16 ] Compared with MESFET, the representative insulated gate FET, using a metal with an insulated layer (such as SiO 2 ) below to fabricate the gate, was initially invented by Mohamed M. Atalla and Dawan Kahng at Bell Lab in 1960 to solve the problem of “surface state” which can be reduced by a sandwich structure of metal (M)‐oxide (O)‐semiconductor (S), namely the widely known MOS structure. [ 17 ] However, because this early MOSFET worked slowly and damaged easily, until a few years later, its value as signal transducer with advantages of low cost, easy fabrication, and easy integrated in large‐scale circuit was finally realized. [ 18 ] Considering the maturity of MOSFET technology, Piet Bergveld from Dutch retained the structure of MOSFET transducer and further developed the ion‐sensing application.…”

Section: Introductionmentioning

confidence: 99%

ISFET‐based sensors for (bio)chemical applications: A review

Cao

Sun

Xiao

et al. 2022

Electrochemical Science Adv

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Ion‐sensitive field effect transistor (ISFET) sensor is a hot topic these years, playing the combined roles of signal recognizer and converter for (bio)chemical analytes. In this review article, the basic concept, origination, and history of the ISFET sensor are presented. In addition, the common fabrication processes, the most‐used working principle (potentiometric, amperometric, and impedancemetric), and the techniques of gate functionality (physical, chemical, and biological) are discussed introducing the afterward signal transfer processes from ISFET to the terminals through different types of circuits. At last, the development and recent progress (until 2021) of ions and biomolecules (DNA molecules, antibodies, enzymatic substrates, and cell‐related secretions or metabolism) were introduced together with the outlook and facing obstacles (Debye screening, the wearability of ISFET, the multiplexed detections) before the commercialization of ISFET. This review article emphasizes the advantages of the developed ISFET sensors as miniaturization, low‐cost, all‐solid, highly sensitive, and easy operation for portable and multiplexed detections.

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“…It should be noted that these parameters are affected by process variation. Especially etching and lithography processes have a great influence on line width variation [17], [18]. Additional process might be required to eliminate the impact of process variation if the impact is not negligible.…”

Section: Error Analysis and Parameter Extraction Stagesmentioning

confidence: 99%

Edge-over-Erosion Error Prediction Method Based on Multi-Level Machine Learning Algorithm

Fukuda

Watanabe

Idani

et al. 2014

IEICE Trans. Fundamentals

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As VLSI process node continue to shrink, chemical mechanical planarization (CMP) process for copper interconnect has become an essential technique for enabling many-layer interconnection. Recently, Edge-over-Erosion error (EoE-error), which originates from overpolishing and could cause yield loss, is observed in various CMP processes, while its mechanism is still unclear. To predict these errors, we propose an EoEerror prediction method that exploits machine learning algorithms. The proposed method consists of (1) error analysis stage, (2) layout parameter extraction stage, (3) model construction stage and (4) prediction stage. In the error analysis and parameter extraction stages, we analyze test chips and identify layout parameters which have an impact on EoE phenomenon. In the model construction stage, we construct a prediction model using the proposed multi-level machine learning method, and do predictions for designed layouts in the prediction stage. Experimental results show that the proposed method attained 2.7∼19.2% accuracy improvement of EoE-error prediction and 0.8∼10.1% improvement of non-EoE-error prediction compared with general machine learning methods. The proposed method makes it possible to prevent unexpected yield loss by recognizing EoE-errors before manufacturing.

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Key directions and a roadmap for electrical design for manufacturability

Cited by 12 publications

References 22 publications

Impact of Planar and Vertical Organic Field‐Effect Transistors on Flexible Electronics

Impact of Planar and Vertical Organic Field‐Effect Transistors on Flexible Electronics

ISFET‐based sensors for (bio)chemical applications: A review

Edge-over-Erosion Error Prediction Method Based on Multi-Level Machine Learning Algorithm

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