Key differences for process-induced uniaxial vs. substrate-induced biaxial stressed Si and Ge channel MOSFETs

Thompson, Scott E.; Sun, Guangyu; Wu, K.; Lim, Jae-Yong; Nishida, Toshikazu

doi:10.1109/iedm.2004.1419114

Cited by 151 publications

(106 citation statements)

References 6 publications

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“…2 Moreover, strained SOI ͑sSOI͒ has recently attracted a great deal of attention since it enables further performance improvements due to higher carrier mobility without device scaling while requiring only small changes in the device processing flow compared to SOI. 3,4 When scaling down the dimensions of metal-oxide-semiconductor field effect transistor devices, ultrashallow contacts and extremely abrupt junctions between the source/drain electrodes and the channel are needed in order to suppress short channel effects. At the same time, the source/drain contacts must be highly doped to keep parasitic resistances as small as possible.…”

Section: Introductionmentioning

confidence: 99%

Boron activation and diffusion in silicon and strained silicon-on-insulator by rapid thermal and flash lamp annealings

Lanzerath

Buca

Trinkaus

et al. 2008

Journal of Applied Physics

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We present experimental results on the activation and diffusion behaviors of boron in silicon-on-insulator and strained silicon-on-insulator using standard rapid thermal processing treatments as well as flash lamp annealing. After boron implantation at different doses and at a low energy of 1 keV, samples were annealed to activate the dopants, and secondary ion mass spectrometry and Hall measurements were carried out to determine boron diffusion and the amount of activated dopants, respectively. In contrast to rapid thermal annealing, flash lamp annealing enables the activation without significant diffusion of dopants. In addition, we investigated the effect of coating the samples with antireflection layers to increase the absorbed energy during flash annealing. As a result, the activation was increased significantly to values comparable with the activation obtained with standard annealing. Furthermore, the relation between the observed boron diffusion and activation as a function of the implantation and annealing parameters is discussed in terms of the kinetics of the defects involved in these processes.

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Section: Introductionmentioning

confidence: 99%

Boron activation and diffusion in silicon and strained silicon-on-insulator by rapid thermal and flash lamp annealings

Lanzerath

Buca

Trinkaus

et al. 2008

Journal of Applied Physics

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“…In analogy with conventional semiconductors, appropriate biaxial stress, which can be obtained by growth on suitable latticemismatch substrates, are likely to produce increases in mobility for quantum confined two-dimensional electron gases. 16 We note that the fractional quantum Hall effect was discovered in a GaAs sample having a mobility of 90 000 cm 2 / V s. 17 The very large mobilities, exceeding 100 000 cm 2 / V s, demonstrated here, will expose lateral quantum transport such as quantum Hall effect and edge state transport in a d-band system. …”

mentioning

confidence: 99%

Enhancing the electron mobility of SrTiO3 with strain

Jalan

Allen

Beltz

et al. 2011

Applied Physics Letters

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We demonstrate, using high-mobility SrTiO3 thin films grown by molecular beam epitaxy, that stress has a pronounced influence on the electron mobility in this prototype complex oxide. Moderate strains result in more than 300% increases in the electron mobilities with values exceeding 120 000 cm2/V s and no apparent saturation in the mobility gains. The results point to a range of opportunities to tailor high-mobility oxide heterostructure properties and open up ways to explore oxide physics.

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Section: Resultsmentioning

confidence: 99%

“…Further details can be found in the corresponding author's previous work. [28][29][30][31][32][33][34][35] The thinning process can be summarized as the anisotropic back-etching of a selected die through several steps of deep reactive ion etching (DRIE) to adequately reach the desired thickness. A detailed description of this process can also be found in our previous work.…”

Section: Discussionmentioning

confidence: 99%

“…Given that mobility depends on the effective mass of carriers, stress can directly affect device performance. 29,30 On the other hand, only a small performance reduction was observed in MOSFET devices after our CMOS-compatible peel-off process was performed, compared with the on-wafer devices (where the most significant impact is on gate leakage current) and at different applied strains (bending radii from 70 mm down to 5 mm or approximately 0.2% strain). 21 Here, we have transferred a flexible silicon fabric with MOSFET devices and characterized their performance before the transfer (flat and bent to a radius of 3.5 mm) and after the transfer (flat and bent to a radius of 3.5 mm;…”

Section: 28mentioning

confidence: 99%

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Nonplanar Nanoscale Fin Field Effect Transistors on Textile, Paper, Wood, Stone, and Vinyl via Soft Material-Enabled Double-Transfer Printing

et al. 2015

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The ability to incorporate rigid but high-performance nano-scale non-planar complementary metal-oxide semiconductor (CMOS) electronics with curvilinear, irregular, or asymmetric shapes and surfaces is an arduous but timely challenge in enabling the production of wearable electronics with an in-situ information-processing ability in the digital world. Therefore, we are demonstrating a soft-material enabled double-transfer-based process to integrate flexible, silicon-based, nano-scale, non-planar, fin-shaped field effect transistors (FinFETs) and planar metal-oxide-semiconductor field effect transistors (MOSFETs) on various asymmetric surfaces to study their compatibility and enhanced applicability in various emerging fields. FinFET devices feature sub-20 nm dimensions and state-of-the-art, high-κ/metal gate stacks, showing no performance alteration after the transfer process. A further analysis of the transferred MOSFET devices, featuring 1 µm gate length, exhibits an I ON value of nearly 70 µA/µm (V DS = 2 V, V GS = 2 V) and a low sub-threshold swing of around 90 mV/dec, proving that a soft interfacial material can act both as a strong adhesion/interposing layer between devices and final substrate as well as a means to reduce strain, which ultimately helps maintain the device's performance with insignificant deterioration even at a high bending state. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 5 Results and Discussions:The hetero-integration process is shown in Figure 1. It begins with the release of a thin layer of silicon of about 30 to 35 µm in thickness from a p-type (100) silicon wafer (figure 1a). The procedure of extracting such a fabric consists of deep trench formation followed by isotropic etching-based release, which has been demonstrated with various devices and thicknesses (5-50 µm) by controlling various design parameters, such as the trenches' depth, as explained in detail in our previous works. 25,26 The transfer process is then carried out by placing the released silicon fabric upside-down on a piece of polyimide film (Kapton) or copper foil, which is coated with unbaked photoresist ( Figure 1b). The photoresist layer is meant to protect the topside of the fabric, where electronic devices "sit", and we have found that a thick layer is the most effective (above 2 µm).Once the photoresist is baked, a thin layer of elastomer polydimethylsiloxane (PDMS) is spin coated on top to provide final adhesion and isolation from applied strains ( Figure 1c). The whole stack is then placed on top of the substrate of interest, and the PDMS layer is left for curing (Figure 1d). Finally, the pho...

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Key differences for process-induced uniaxial vs. substrate-induced biaxial stressed Si and Ge channel MOSFETs

Cited by 151 publications

References 6 publications

Boron activation and diffusion in silicon and strained silicon-on-insulator by rapid thermal and flash lamp annealings

Boron activation and diffusion in silicon and strained silicon-on-insulator by rapid thermal and flash lamp annealings

Enhancing the electron mobility of SrTiO3 with strain

Nonplanar Nanoscale Fin Field Effect Transistors on Textile, Paper, Wood, Stone, and Vinyl via Soft Material-Enabled Double-Transfer Printing

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