Ka-Band Low Loss and High Power SPDT Switch with Stacked-FET Topology

Fan, Ze; Mou, Shouxian

doi:10.1109/icccs55155.2022.9846188

Cited by 1 publication

(2 citation statements)

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“…In [5], the isolation performance of an X-band switch was improved to 33dB by adopting shunt RC network compensation, which has 20 dBm of 𝑃 of 10 GHz. References [6] and [7] also used series-shunt topology to implement SPDT, and obtained similar performance to Reference [5] in their operating frequency range. However, the power-handling capability of these designs is poor, so that stacked FET structure was adopted to enhance the power-handling capability of the shunt SPDT [6][7].…”

Section: Introductionmentioning

confidence: 55%

“…References [6] and [7] also used series-shunt topology to implement SPDT, and obtained similar performance to Reference [5] in their operating frequency range. However, the power-handling capability of these designs is poor, so that stacked FET structure was adopted to enhance the power-handling capability of the shunt SPDT [6][7]. But, due to the limitation of 1 / 4 λ line, the shunt topology is only suitable for SPDT with narrow operating frequency range.…”

Section: Introductionmentioning

confidence: 55%

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Design of DC-18 GHz high-isolation and high-power SPDT

Huang,

Ma,

Chen

2024

Second International Conference on Electrical, Electronics, and Information Engineering (EEIE 2023)

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A single blade double-throw (SPDT) switch for transceiver/receiver (T/R) module applications with wide band, high power, and high isolation is presented in this paper. The switch operates in the frequency range of DC-18 GHz and is realized by series-shunt topology. To improve the power-handling capability, stacked FET transistors are used. An inductor is inserted into the internal shunt transistor to improve switch isolation and return loss performance within the operating frequency band. This SPDT is realized using 0.25-μm GaAs pHEMT technology, and its size is 0.94 mm × 0.94 mm. The electromagnetic (EM) simulation results indicated that the design offers a low insertion loss of 2.1 dB and high isolation of 48.9 dB. The input 1-dB power compression point (𝑃 ) is 32.4 dBm @ 12 GHz.

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