K through Ka-band driver and power amplifiers

Simon, K.M.; Wohlert, R.; Wendler, J.; Aucoin, L.; Vye, David

doi:10.1109/mcs.1996.506297

Cited by 7 publications

(1 citation statement)

References 2 publications

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“…The authors in [11] have introduced a 4-stage broadband PA using GaAs pHEMT process with 24 dBm 1 dB-compression-point output power (P-1dB), 15% power added efficiency (PAE), and 3.36 mm 2 chip size, over the frequency band from 17 GHz to 26 GHz. A K-band driver amplifier and a K-band PA are introduced in [12]. The 6-stage power amplifier delivered 23 dBm output power from 17 GHz to 36 GHz with 8% PAE and 22.5 dBm from 36 GHz to 40 GHz with 14% PAE.…”

Section: Introductionmentioning

confidence: 99%

The Design and Thermal Reliability Analysis of a High-Efficiency K-Band MMIC Medium-Power Amplifier with Multiharmonic Matching

Shang¹,

Xu²,

et al. 2016

Active and Passive Electronic Components

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A new high-efficiency K-band MMIC medium-power amplifier (PA) is designed with multiharmonic matching using GaAs pHEMT process technology. It has an operation frequency centered at 26 GHz with a bandwidth of 2 GHz. A 20 dBm 1 dB-compression-point output power and 40% efficiency are achieved. A novel thermal reliability analysis method based on ICEPAK is proposed also to evaluate its thermal characteristic. The test result by using a QFI InfraScope™infrared imaging system is compared with the simulation result. It agrees well with an accuracy within ±1°C differences, which reflects the advantages of the thermal analysis method with respect to accuracy and convenience for use.

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Section: Introductionmentioning

confidence: 99%