2012
DOI: 10.1063/1.4767452
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K-shell spectroscopy of silicon ions as diagnostic for high electric fields

Abstract: We developed a detection scheme, capable of measuring X-ray line shape of tracer ions in μm thick layers at the rear side of a target foil irradiated by ultra intense laser pulses. We performed simulations of the effect of strong electric fields on the K-shell emission of silicon and developed a spectrometer dedicated to record this emission. The combination of a cylindrically bent crystal in von Hámos geometry and a CCD camera with its single photon counting capability allows for a high dynamic range of the i… Show more

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Cited by 3 publications
(3 citation statements)
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“…For our setup, simulations showed that for the given experimental parameters and detected spectra, the introduced correction for the absorption would be sufficient to obtain reliable data. As we used no wavelength dispersive elements for measuring the continuous X-ray spectra, we had to ensure that our detectors operated in the "single-photon counting regime" [30,31], implying, in any case, that the ratio of the number of photons divided by the number of pixels must be ≤0.15.…”
Section: Methodsmentioning
confidence: 99%
“…For our setup, simulations showed that for the given experimental parameters and detected spectra, the introduced correction for the absorption would be sufficient to obtain reliable data. As we used no wavelength dispersive elements for measuring the continuous X-ray spectra, we had to ensure that our detectors operated in the "single-photon counting regime" [30,31], implying, in any case, that the ratio of the number of photons divided by the number of pixels must be ≤0.15.…”
Section: Methodsmentioning
confidence: 99%
“…In the first experiments, the high-pressure gas jet targets will be used. The problems with overlapping X-ray emission from field perturbed and non-perturbed plasma will be solved benefiting from polarization properties of otherwise forbidden transitions that become partially allowed in strong field affected plasmas [176]. Alternatively, our experience with identification of electric field affected profiles of spectral lines emitted from independently produced plasmas submitted to external (laser) fields [173] will be used.…”
Section: High-field Diagnostics With X-ray Spectroscopymentioning
confidence: 99%
“…In conventional flat crystal spectrometer configurations, a compromise is typical between energy coverage and the working distance to the source. The combination of a cylindrically bent crystal in von Hámosgeometry 14 and a CCD camera with single photon‐counting capability incurs a high dynamic range for the instrument and allows the achievement of background‐free spectra 15 …”
Section: Introductionmentioning
confidence: 99%