K-shell energy levels and radiative rates for transitions in Si ix

Wei, Huigang; Shi, Jianrong; Wang, F. L.; Zhong, Jiayong; Liang, G. Y.; Zhao, Gang

doi:10.1051/0004-6361/201423726

Cited by 5 publications

(9 citation statements)

References 46 publications

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“…Many of these atomic parameters have been measured in the laboratory for L-shell Si ions (see Faenov et al (1994); Kramida & Träbert (1995); Vilkas et al (2005); Hell et al (2016) and references in there). Multiple systematic (Behar & Netzer 2002; Gu 2005; Liang et al 2007; Palmeri et al 2008; Karim 2011; Wang et al 2011; Hell et al 2016) and targeted (Orloski & Trigueiros 2001; Wei et al 2010; Tayal 2012; Sossah & Tayal 2015; Wei et al 2014) calculations have complemented the measurements. Atomic data has also been provided by calculations of the isoelectronic sequence of various L-shell ions (Safronova & Shlyaptseva 1996; Jönsson et al 2011; Rynkunb et al 2012; Jönsson et al 2013, 2014; Rynkunb et al 2014; Nazé et al 2014; Wang et al 2014, 2015, 2017).…”

Section: Introductionmentioning

confidence: 99%

“…Most of these calculations focused on valence level energies, and only a limited number of them deals with K-vacancy level energies (Safronova & Shlyaptseva 1996; Behar & Netzer 2002; Palmeri et al 2008; Wei et al 2010; Karim 2011; Wang et al 2011; Wei et al 2014; Hell et al 2016). Moreover, valence level energies have been studied to a high level of accuracy with large-scale Relativistic Configuration Interaction (RCI) (Jönsson et al 2011; Rynkunb et al 2012; Jönsson et al 2013, 2014; Rynkunb et al 2014; Nazé et al 2014) and combining RCI with Many-Body Perturbation Theory approaches (Vilkas et al 2005; Wang et al 2014, 2015).…”

Section: Introductionmentioning

confidence: 99%

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Relativistic MR–MP Energy Levels for L-shell Ions of Silicon

Santana

Lopez-Dauphin

Beiersdörfer³

2018

ApJS

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Level energies are reported for Si V, Si VI, Si VII, Si VIII, Si IX, Si X, Si XI and Si XII. The energies have been calculated with the relativistic Multi-Reference Møller-Plesset Perturbation Theory method and include valence and K-vacancy states with up to 5. The accuracy of the calculated level energies is established by comparison with the recommended data listed in the National Institute of Standards and Technology (NIST) on-line database. The average deviation of valence level energies ranges from 0.20 eV in Si V to 0.04 eV in Si XII. For K-vacancy states, the available values recommended in the NIST database are limited to Si XII and Si XIII. The average energy deviation is below 0.3 eV for K-vacancy states. The extensive and accurate dataset presented here greatly augments the amount of available reference level energies. We expect our data to ease the line identification of L-shell ions of Si in celestial sources and laboratory generated plasmas, and to serve as energy references in the absence of more accurate laboratory measurements.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Relativistic MR–MP Energy Levels for L-shell Ions of Silicon

Santana

Lopez-Dauphin

Beiersdörfer³

2018

ApJS

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“…In order to investigate the effects of different atomic data on the calculated absorption spectra, we adopted the same configurations as those in the work of Palmeri et al (2008), who calculated the K-shell atomic data. For Be-like and C-like ions, the accuracy of the K-shell data was described in our previous work (Wei et al 2010(Wei et al , 2014). The energy levels are generally accurate to a few eV (less than 4 eV), the wavelengths to within 15 mÅ, and the radiation to around 20% for most transitions.…”

Section: Modelmentioning

confidence: 99%

“…Fortunately, since the launch of high resolution X-ray satellites (Chandra and XMM), K-shell atomic data have been extensively calculated (Palmeri et al 2002(Palmeri et al , 2008(Palmeri et al , 2011(Palmeri et al , 2012Behar & Netzer 2002;Bautista et al 2003Bautista et al , 2004Mendoza et al 2004;Witthoeft et al 2009;Wei et al 2010Wei et al , 2014. Among these works, Palmeri et al (2008) reported firstly the K-shell data for M-shell ions of Ne, Mg, Si, S, Ar, and Ca with the codes HFR (Cowan 1981) and AUTOSTRUCTURE (Badnell 1986(Badnell , 1997.…”

Section: Introductionmentioning

confidence: 99%

Effects of lowly ionized ions on silicon K-shell absorption spectra

Wei

Shi

Liang

et al. 2016

A&A

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Context. In both astrophysical and laboratory plasmas, K-shell absorption spectra have become powerful diagnostic tools to investigate electron density and temperature. These spectra are also widely used to verify the opacity codes in laboratory settings. Aims. We report the effects of the low ionization silicon ions, namely from Si I to Si V, which have rarely been considered in previous models, on the K-shell silicon absorption spectra. Methods. The Si K-shell atomic data were calculated with the flexible atomic code, which is a fully relativistic atomic program with configuration interaction taken into consideration. Detailed level accounting models were employed to calculate the absorption spectra. Results. We calculate the Si absorption spectra in local thermodynamic equilibrium conditions with temperature and density ranges of 20−70 eV and ∼10 20 cm −3 to ∼10 22 cm −3 , respectively, and show the contributions of the lowly ionized ions to the K-shell absorption spectra of silicon. We also investigate the effects of the different atomic data on the absorption spectra. We find good agreement between our results and these from OPLIB. Conclusions. We find that the contributions from these lowly ionized ions cannot be neglected at relative low temperatures. Accurate experimental measurements are needed to benchmark the theoretical calculations.

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“…Many theoretical calculations [4,[9][10][11] have been performed to derive the wavelengths and transition rates of K-shell lines using kinds of atom structure codes. These include using HFR [12] and AUTOSTRUCTURE [13,14] to calculate the wavelength and A-values of K-shell lines for some medium-Z elements.…”

Section: Introductionmentioning

confidence: 99%

Measurement and analysis of K-shell lines of silicon ions in laser plasmas

Han

Wang

Zhong

et al. 2018

High Pow Laser Sci Eng

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We present laboratory measurement and theoretical analysis of silicon K-shell lines in plasmas produced by Shenguang II laser facility, and discuss the application of line ratios to diagnose the electron density and temperature of laser plasmas. Two types of shots were carried out to interpret silicon plasma spectra under two conditions, and the spectra from 6.6Å to 6.85Å were measured. The radiative-collisional code based on the flexible atomic code (RCF) is used to identify the lines, and it also well simulates the experimental spectra. Satellite lines, which are populated by dielectron capture and large radiative decay rate, influence the spectrum profile significantly. Because of the blending of lines, the traditional G value and R value are not applicable in diagnosing electron temperature and density of plasma. We take the contribution of satellite lines into the calculation of line ratios of He-α lines, and discuss their relations with the electron temperature and density.

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K-shell energy levels and radiative rates for transitions in Si ix

Cited by 5 publications

References 46 publications

Relativistic MR–MP Energy Levels for L-shell Ions of Silicon

Relativistic MR–MP Energy Levels for L-shell Ions of Silicon

Effects of lowly ionized ions on silicon K-shell absorption spectra

Measurement and analysis of K-shell lines of silicon ions in laser plasmas

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