2014
DOI: 10.1117/12.2050707
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Junctionless thin-film ferroelectric oxides for photovoltaic energy production

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Cited by 3 publications
(6 citation statements)
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“…These materials have suitable optical and electronic properties for a PV absorber material. [45][46][47] One route for …”
Section: Ferroelectric Photovoltaic Effectsmentioning
confidence: 99%
“…These materials have suitable optical and electronic properties for a PV absorber material. [45][46][47] One route for …”
Section: Ferroelectric Photovoltaic Effectsmentioning
confidence: 99%
“…The microstructural, electrical, and optical properties of FTO are sensitive to deposition technique and conditions [6,7]. Streaming Process for Electrodeless Electrochemical Deposition (SPEED) [8][9][10][11], which was developed by SISOM Thin Films LLC, is a high-rate uniform deposition technique that uses water-soluble precursors to rapidly coat the substrate with nanoparticle-based films. SPEED has its foundation in chemical bath deposition (CBD) [8][9][10] and is distinct from spray pyrolysis.…”
Section: Introductionmentioning
confidence: 99%
“…Figure 6 shows an illustration of a KBNN supercell, in which an oxygen vacancy (denominated as N i − V o − N b) has been included [54]. The remanent polarization value for the KBNNO system have been reported between 0.1 -0.3 C/m 2 [10, 45,51,55]. When compared to other ferroelectrics, these polarization values reported for KBNNO are considered relatively low due to be limited by ferroelectric in sintered pellets.…”
Section: Kbnn Systemmentioning
confidence: 99%
“…When compared to other ferroelectrics, these polarization values reported for KBNNO are considered relatively low due to be limited by ferroelectric in sintered pellets. In spite of these values be low, it allows open-circuit voltages (V oc ) higher than the bandgap values observed of these materials, which is important to photocarrier separation and photo-current across the bulk [10,55]. Thus, the photovoltaic eect in ferroelectrics occurs in a dierent way to the conventional semiconductors pn junction [54,55].…”
Section: Kbnn Systemmentioning
confidence: 99%
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