Junction Temperature Optical Sensing Techniques for Power Switching Semiconductors: A Review

Abstract

Recent advancements in power electronic switches provide effective control and operational stability of power grid systems. Junction temperature is a crucial parameter of power-switching semiconductor devices, which needs monitoring to facilitate reliable operation and thermal control of power electronics circuits and ensure reliable performance. Over the years, various junction temperature measurement techniques have been developed, engaging both non-optical and optical-based methods, highlighting their advancements and challenges. This review focuses on several optical sensing-based junction temperature measuring techniques used for power-switching devices such as metal-oxide-semiconductor field-effect transistors (MOSFETs) and insulated-gate bipolar transistors (IGBTs). A comprehensive summary of recent developments in infrared camera (IRC), thermal sensitive optical parameter (TSOP), and fiber Bragg grating (FBG) temperature sensing techniques is provided, shedding light on their merits and challenges while providing a few possible future solutions. In addition, calibration methods and remedies for obtaining accurate measurements are discussed, thus providing better insight and directions for future research.

Steady-State Temperature-Sensitive Electrical Parameters’ Characteristics of GaN HEMT Power Devices

“…In contrast, The junction temperature monitoring methods can be divided into four categories: the optical measurement method, physical contact method, thermal network modeling method, and temperature-sensitive electrical parameters (TSEPs) method. The optical method can provide a map of the temperature distribution, but it requires that the device must be unpacked [14,15]. Although the physical contact method is inexpensive and noninvasive, its slow response speed makes it difficult to track dynamic junction temperature accurately [16].…”