Junction profiling on hot carrier stressed device by dual lens electron holography and scanning capacitance microscopy

Internal Electric Field Profiling of 2D P-N Junctions of Semiconductor Devices by 4D STEM and Dual Lens Electron Holography

“…Over the years, several techniques have been developed using electron microscopes for 2D junction profiling. The most notable of these is dual lens electron holography [1][2][3][4][5][6][7], which has flexibility in measuring the variable size of semiconductor devices, making it a versatile technique. Electron holography measures the electrostatic potential of a P-N junction [8,9].…”

Dual Lens Electron Holography, Scanning Capacitance Microscopy (SCM), Scanning Spreading Resistance Microscopy (SSRM) Comparison for Semiconductor 2-D Junction Characterization

“…Dual lens electron holography can obtain the highest spatial resolution of 0.6 nm with fringe spacing of 0.2 nm (under the assumption that spatial resolution of an electron hologram is 3× fringe spacing). More industrial applications of the technique have been published [24][25][26].…”