Abstract:Ultra shallow junctions <500 hi with steep profiles 4nmldecade are required for device technologies 50.13 pm as outlined by the recent ITRS Roadmap. For a $In junction such profiles can be obtained using sub-keV B ion implantation since both the projected range and more importantly the transient enhanced diffusion are significantly reduced at lower energies. State-of-the-art high current implanters utilize deceleration mode typically for sub 1 keV implantation in order to increase the beam current and producti… Show more
“…In such cases, more-proactive approaches must be taken. The most commonly practiced solution for channel blocking is deliberate amorphization before implantation (Al-Bayati et al, 2000), often termed PAI (Bousetta et al, 1991).…”
“…In such cases, more-proactive approaches must be taken. The most commonly practiced solution for channel blocking is deliberate amorphization before implantation (Al-Bayati et al, 2000), often termed PAI (Bousetta et al, 1991).…”
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