Junction Profile Engineering with a Novel Multiple Laser Spike Annealing Scheme for 45-nm Node High Performance and Low Leakage CMOS Technology

Yamamoto, Tsuyoshi; Kubo, Tomohiro; Sukegawa, T.; Takii, E.; Shimamune, Y.; Tamura, N.; Sakoda, T.; Nakamura, Makoto; Ohta, Hiromichi; Miyashita, Takuya; Kurata, H.; Satoh, Shuichi; Kase, M.; Sugii, T.

doi:10.1109/iedm.2007.4418885

Cited by 25 publications

(18 citation statements)

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“…18 LSA is achieved using a line focused continuous wave (CW) laser scanned over the sample, as shown in Fig. 18 LSA is achieved using a line focused continuous wave (CW) laser scanned over the sample, as shown in Fig.…”

Section: Laser Spike Annealingmentioning

confidence: 99%

Control of polystyrene-block-poly(methyl methacrylate) directed self-assembly by laser-induced millisecond thermal annealing

Jacobs

Jung

Jiang

et al. 2015

J. Micro/Nanolith. MEMS MOEMS

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Directed self-assembly of polystyrene-block-poly(methyl methacrylate) (PS-b-PMMA) during laser thermal annealing at peak temperatures of 300°C-800°C for dwells of 1-10 ms has been explored. The enhanced mobility of polymer chains at these temperatures improves registration compared with conventional thermal anneals. PS-b-PMMA films (forming 15-nm line∕space standing lamellae) were cast on chemically patterned substrates with a copolymer neutral layer and annealed by laser and hot plate. Annealing by hot plate or multiple laser scans resulted in well-aligned features over micron length scales. By laser annealing multiple times, defectivity was reduced by ∼60%. However, laser annealing for only 10 ms before performing a hot plate anneal reduced defectivity by >80%. We believe that this reduction arises from improved interfacial alignment of the film to the template during laser annealing near the order-disorder transition. Jacobs et al.: Control of polystyrene-block-poly(methyl methacrylate) directed self-assembly. . . Downloaded From: http://nanolithography.spiedigitallibrary.org/ on 08/20/2015 Terms of Use: http://spiedigitallibrary.org/ss/TermsOfUse.aspx Jacobs et al.: Control of polystyrene-block-poly(methyl methacrylate) directed self-assembly. . . Downloaded From: http://nanolithography.spiedigitallibrary.org/ on 08/20/2015 Terms of Use: http://spiedigitallibrary.org/ss/TermsOfUse.aspx Jacobs et al.: Control of polystyrene-block-poly(methyl methacrylate) directed self-assembly. . . Downloaded From: http://nanolithography.spiedigitallibrary.org/ on 08/20/2015 Terms of Use: http://spiedigitallibrary.org/ss/TermsOfUse.aspx

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Section: Laser Spike Annealingmentioning

confidence: 99%

Control of polystyrene-block-poly(methyl methacrylate) directed self-assembly by laser-induced millisecond thermal annealing

Jacobs

Jung

Jiang

et al. 2015

J. Micro/Nanolith. MEMS MOEMS

View full text Add to dashboard Cite

show abstract

“…8, SCE are improved with a shallow junction, and the gate length at I off ¼ 100 nA/mm increases. 8,9) This means that the gate length at I off ¼ 100 nA/mm is a barometer of SCE. In this experiment, the value of the I off at a long gate length of both conventional and GORES MOSFETs are same.…”

Section: Device Characteristicsmentioning

confidence: 99%

“…Generally, as the gate length at I off ¼ 100 nA/mm decreases, R sd increases, and I on at a constant I off decreases. 8,9) In conventional nMOSFETs, the I on at I off ¼ 100 nA/mm decreases as the gate length at I off ¼ 100 nA/mm decreases. In GORES nMOSFETs, the gate length at I off ¼ 100 nA/mm was about 40 nm in this epitaxial condition, and with an increase in impurity concentrations, the I on increases.…”

Section: Device Characteristicsmentioning

confidence: 99%

Novel Damascene Gate Metal–Oxide–Semiconductor Field-Effect Transistors Fabricated by In situ Arsenic- and Boron-Doped Epitaxy

Kikuchi¹,

Tateshita²,

Miyanami³

et al. 2010

Jpn. J. Appl. Phys.

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A new concept planar metal-oxide-semiconductor field-effect transistor (MOSFET) which was fabricated by in situ doped selective Si epitaxy, has been proposed. Owing to the ultra-shallow junction, the short-channel effects were improved, and the drive current was increased by the gate overlapped structure as well. The characteristics of this new concept MOSFET were improved compared with those of a conventional MOSFET because of improvements in short-channel effects and parasitic resistances. #

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“…The lgLSA technique is based upon laser spike annealing (LSA), which was originally developed to activate dopants in silicon , but has recently also shown promise in photolithography and directed self-assembly . In LSA, a line-focused laser beam (typical aspect ratio 10:1 to 100:1) is scanned to locally heat a sample (Figure a), with temperature profiles determined by the laser intensity profile (Figure b), sample absorption, substrate thermal conductivity, and scan velocity.…”

Section: Introductionmentioning

confidence: 99%

Lateral Temperature-Gradient Method for High-Throughput Characterization of Material Processing by Millisecond Laser Annealing

et al. 2016

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A high-throughput method for characterizing the temperature dependence of material properties following microsecond to millisecond thermal annealing, exploiting the temperature gradients created by a lateral gradient laser spike anneal (lgLSA), is presented. Laser scans generate spatial thermal gradients of up to 5 °C/μm with peak temperatures ranging from ambient to in excess of 1400 °C, limited only by laser power and materials thermal limits. Discrete spatial property measurements across the temperature gradient are then equivalent to independent measurements after varying temperature anneals. Accurate temperature calibrations, essential to quantitative analysis, are critical and methods for both peak temperature and spatial/temporal temperature profile characterization are presented. These include absolute temperature calibrations based on melting and thermal decomposition, and time-resolved profiles measured using platinum thermistors. A variety of spatially resolved measurement probes, ranging from point-like continuous profiling to large area sampling, are discussed. Examples from annealing of III-V semiconductors, CdSe quantum dots, low-κ dielectrics, and block copolymers are included to demonstrate the flexibility, high throughput, and precision of this technique.

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Junction Profile Engineering with a Novel Multiple Laser Spike Annealing Scheme for 45-nm Node High Performance and Low Leakage CMOS Technology

Cited by 25 publications

References 0 publications

Control of polystyrene-block-poly(methyl methacrylate) directed self-assembly by laser-induced millisecond thermal annealing

Control of polystyrene-block-poly(methyl methacrylate) directed self-assembly by laser-induced millisecond thermal annealing

Novel Damascene Gate Metal–Oxide–Semiconductor Field-Effect Transistors Fabricated by In situ Arsenic- and Boron-Doped Epitaxy

Lateral Temperature-Gradient Method for High-Throughput Characterization of Material Processing by Millisecond Laser Annealing

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