Junction parameter control of Bi2Sr2CaCu2O8+δ stacked junctions by annealing

Inomata, K.; Kawae, Takeshi; Nakajima, Koji; Kim, S.-J.; Yamashita, Tsutomu

doi:10.1063/1.1542679

Cited by 40 publications

(44 citation statements)

References 19 publications

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“…This result suggests that the c-axis length of the Bi-2212 under the Pt-EL increases by H 2 -annealing. It is known that the c-axis length of Bi-2212 increases with decreasing carrier concentration by decreasing the oxygen content [9]. Therefore, our result suggests that Bi-2212 under the Pt-EL was strongly reduced by H 2 -annealing with the assistance of the catalytic effect of Pt.…”

Section: Methodsmentioning

confidence: 53%

Analysis of Memory Effect Induced by Hydrogen Annealing

Hanada¹,

Miura²,

Notsu³

et al. 2014

Proceedings of the 12th Asia Pacific Physics Conference (APPC12)

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We investigated the electronic state of resistive random access memory (ReRAM) consisting of Bi 2 Sr 2 CaCu 2 O 8+ (Bi-2212) bulk single crystal for elucidation of switching mechanism. Hydrogen ions were effectively introduced into the Bi-2212 with the assistance of a Pt catalyst, and resistive switching effect was brought about in the interface between the Pt and the Bi-2212. An X-ray absorption fine structure profile suggested that decrease in formal Cu valence of the Pt/Bi-2212 interface was necessary for the development of the resistive switching effect. We clarified that the development of the resistive switching phenomenon in ReRAM was caused by the strong reduction of memory layer due to introduction of hydrogen ions with the assistance of Pt catalytic effect.

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Section: Methodsmentioning

confidence: 53%

Analysis of Memory Effect Induced by Hydrogen Annealing

Hanada¹,

Miura²,

Notsu³

et al. 2014

Proceedings of the 12th Asia Pacific Physics Conference (APPC12)

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“…This discontinuity is not a random one, as it corresponds to the change in the slope of the c-axis vs growth temperature curve observed in figure 3 for the γ, δ and ε batches. Such a scattering in T c data for almost identical c-axis values is less than the one shown in the range 30.58Å to 30.60 Å by other researchers [8].…”

Section: 2: Xrpd and Electrical Characterization Resultsmentioning

confidence: 72%

“…Several works can be found demonstrating the possibility to produce or sense coherent THz radiation from layered high-temperature superconductors (HTSC) due to their intrinsic Josephson junctions (IJJs) properties [1,4,5]. For instance, the Bi 2 Sr 2 CaCu 2 O 8+δ (Bi-2212) phase of the BSCCO system exhibits such features and has been widely studied in previous papers [6][7][8].…”

Section: Introductionmentioning

confidence: 99%

“…So far, all of the achievements in this field have been obtained by means of post-annealing treatments to be applied after the growth stage. Typical treatments consisted of post-annealing temperatures around 400°C [8,16], even if it has been shown that similar effects can also be obtained at much lower temperatures [17,18,19]. Such processes are able to induce remarkable modifications in the oxygen doping level that can be detected by means of the c-axis lattice parameter [16,17,20,21], but can also give rise to a certain degree of unhomogeneity in the whiskers [18,19].…”

Section: Introductionmentioning

confidence: 99%

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Control of the oxygen doping in Bi-2212 whiskers by means of their synthesis process

Khan

Cagliero

Agostino

et al. 2009

Supercond. Sci. Technol.

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Direct evidences of oxygen doping control in single phase Bi 2 Sr 2 CaCu 2 O 8+δ (Bi-2212) whisker are reported, along with the changes in their structural properties obtained by varying the growth temperature of the synthesis process in the range from 843°C to 872°C. The as grown whiskers were investigated by means of X-Rays Powder Diffraction (XRPD), electrical transport measurements, Scanning Electron Microscopy (SEM) and Energy Dispersive X-ray Spectroscopy (EDS). The XRPD measurements showed that the value of c-axis lattice parameter increases from 30.556Å to 30.640Å when increasing the growth temperature, which indicates different oxygen doping levels spanning from the slightly overdoped to the nearly optimally doped regimes. Such results are also confirmed by the electrical characterizations, which revealed a typical relationship among resistivity (ρ ab ), superconducting critical temperature (T c ), and caxis value. The growth of CuO crystals has also been identified during this study, with a maximum yield in the range 860°C-864°C, where also a slope change in the c-axis behaviour has been found, implying a possible correlation between the two phenomena. Therefore, by changing the synthesis growth temperature, one can provide an effective way for tuning the whisker electrical transport properties.

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“…Fabrication of IJJs requires small high quality crystals. HT c superconducting Bi 2 Sr 2 CaCu 2 O x (Bi-2212) single crystals satisfies these requirements due to their perfect crystallinity, small dimensions and easy production [2].…”

Section: Introductionmentioning

confidence: 99%