Junction formation and characteristics of CdS/CuInSe2/metal interfaces

The electronic band parameters calculated by the Kronig–Penney method for Cd1−xZnxS quantum dot superlattices

“…On the other hand, Cd 1−x Zn x S thin films have led to a decrease in window absorption and to an increase in the short circuit current as well [8][9][10][11][12][13]. This ternary system has also a special importance as photocatalysts for hydrogen production by visible light [1] and in the fabrication of flat panel displays [14][15][16].…”

Process parameter impact on properties of sputtered large-area Mo bilayers for CIGS thin film solar cell applications

“…Mo is a favorite back contact, scoring over Pt, Au, Au/Be, Al, Ni, Ag, and Cu because of its excellent properties such as low resistivity, ability of not forming alloy with Cu, matching thermal coefficient of expansion with SLG substrate and absorber layers than the above mentioned materials [4][5][6]. Mo has been reported to form MoSe 2 at the interface during selenization, which acts as an ohmic contact between Mo and CIGS and also improves adhesion between them [7].…”

Review on Substrate and Molybdenum Back Contact in CIGS Thin Film Solar Cell

“…The following layer in CIGS after substrate is the molybdenum (Mo) back contact which acts as an optical reflector to reflect the light back to the absorber layer in CIGS solar cell [12,13]. Molybdenum (Mo) is a preferred back contact material for CIGS solar cells because it does not react strongly with CIGS; it forms low-resistivity ohmic contact to CIGS, and the conductivity of Mo does not degrade during deposition of CIGS at high substrate temperature [14][15][16][17]. Mo has high conductivity and is more chemically stable and mechanically stable during CIGS growth (selenization) than other materials such as W, Ta, Nb, Cr, V, Ti, and Mn [18][19][20][21][22][23].…”