Junction Barrier Schottky (JBS) Rectifier Interface Engineering Facilitated by Two-Dimensional (2D) Dopant Imaging

Abstract

The shielding cell architecture of a buried grid (BG) Junction Barrier Schottky (JBS) diode consisting of multiple consecutive p+-implanted stripes below the metal/semiconductor interface has been observed by performing non-contact Scanning Probe Microscopy (SPM) and Secondary Electron Potential Contrast (SEPC) measurements on the cross-section of the device. We have demonstrated that these techniques succeeded in mapping the two-dimensional carrier distribution inside the active area of the device, however with different resolution and quantification possibilities.

Nanoscale investigation of the silicon carbide double-diffused MOSFET with scanning capacitance force microscopy

“…13) Moreover, the evaluation of a SiC diode using KFM and scanning capacitance force microscopy (SCFM) has been reported. 14,15) Recently, we have reported the investigation of a commercial SiC Schottky barrier diode (SiC-SBD) under an applied bias voltage using AFM combined with KFM and SCFM. 16) In this study, to achieve stable nanoscale observations under a vacuum-pressure environment, regulated of the probe-tip-sample distance with the frequency-modulation (FM) method was controlled in conventional systems.…”

Observation of silicon carbide Schottky barrier diode under applied reverse bias using atomic force microscopy/Kelvin probe force microscopy/scanning capacitance force microscopy

“…In contrast, the evaluation of an SiC-junction barrier diode using Kelvin probe force microscopy (KFM) and scanning capacitance force microscopy (SCFM) was previously performed by Mayer and colleagues. 15,16) Recently, we have reported the investigation of a commercial Si-SBD under an applied bias voltage using our analysis system, which combines atomic force microscopy (AFM) with KFM and SCFM. 17) In this study, a frequency modulation method is added to our conventional system in order to scan the sample stability under vacuum pressure.…”