JS-002 module and product CDM result comparison to JEDEC and ESDA CDM methods

Righter, Alan; Ashton, R.A.; Carn, Brett; Johnson, Marty; Reynolds, Bruce W.; Smedes, T.; Ward, Scott; Wolf, Heinrich

doi:10.1109/eosesd.2016.7592541

Cited by 2 publications

(1 citation statement)

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“…transient is a function of the injected pulse's di dt. The characteristics of the injected CDM pulse are determined not only by the tester and the on-chip protection but also the IC package [81]. The pulse delivered from an FICDM tester to an IC component is a distorted version of the pulse measured using a calibration coin; furthermore, analysis indicates that the pulse that appears on-die, which cannot be measured directly, is different from the one measured at the tester [82], [83].…”

Section: Discussionmentioning

confidence: 99%

Compact Models for Simulation of On-Chip ESD Protection Networks

Rosenbaum,

Huang,

Drallmeier

et al. 2024

IEEE Trans. Electron Devices

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Technology scaling and increased data rates make it near impossible to achieve historic levels of electrostatic discharge (ESD) robustness. This heightens the need for pre-Si verification that a design's ESD level is above a critical value, below which the yield loss and the number of field returns are expected to be high. Transient simulation plays a role in ESD design verification and requires the availability of accurate compact models of the various semiconductor devices, which lie along the discharge path. The compact models included in a foundry process design kit (PDK) are not accurate at ESD current levels. This article describes compact models that have been developed in the ESD device research community. It reviews the measurements used to characterize ESD protection devices and acquire data for model parameter extraction. It is concluded that obtaining accurate measurement data is challenging and this impedes the widescale adoption of ESD compact models.

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Section: Discussionmentioning

confidence: 99%