Joule Heating and Peltier Effects in Thermoelectric Spin-Transfer Torque Mram Devices Using Finite Element Modeling

Harnsoongnoen, Supakorn; Phaengpha, N.; Ritjaroenwattu, S.; Charoen-In, Urit; Siritaratiwat, Apirat

doi:10.4028/www.scientific.net/amr.931-932.989

Cited by 3 publications

(2 citation statements)

References 13 publications

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“…It is known that a tunneling current of more than 1 MA cm −2 flows through the MgO-MTJ during data writing [1][2][3][4]. This large current causes significant Joule heating around the MgO dielectric film [26]. Several recent studies have investigated self-heating due to joule heating [12,[25][26][27].…”

Section: Theoretical Investigation Of Self-heatingmentioning

confidence: 99%

“…This large current causes significant Joule heating around the MgO dielectric film [26]. Several recent studies have investigated self-heating due to joule heating [12,[25][26][27]. Hosotani et al reported that the temperature increase due to self-heating reached 80 °C for an MgO-MTJ with an area of 100 × 100 nm 2 [12].…”

Section: Theoretical Investigation Of Self-heatingmentioning

confidence: 99%

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Temperature dependence of reliability characteristics for magnetic tunnel junctions with a thin MgO dielectric film

Choi

Kim

et al. 2016

Semicond. Sci. Technol.

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Temperature dependence of the reliability characteristics of magnetic tunnel junctions (MTJs) with a thin (∼1 nm thick) MgO dielectric film were investigated by numerical analyses based on the E-model, 1/E-model, and power-law voltage V-model, as well as by measuring timedependent dielectric breakdown (TDDB) degradation. Although the tunneling process giving rise to TDDB is still under debate, the temperature dependence of TDDB was much weaker using the 1/E model than the E-model or power-law model. The TDDB data measured experimentally in CoFeB/MgO/CoFeB MTJ devices also showed rather weak temperature dependence, in good agreement with the numerical results obtained from the 1/E-model considering the self-heating effect in MTJ devices. Moreover, we confirmed by interval voltage stress tests that some degradation in the MgO dielectric layer occurred. Based on our findings, we suggest that to characterize the reliability of MTJs, combined temperature measurements of TDDB and 1/E-model analyses taking the self-heating effect into account should be performed.

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Section: Theoretical Investigation Of Self-heatingmentioning

confidence: 99%

Section: Theoretical Investigation Of Self-heatingmentioning

confidence: 99%

Temperature dependence of reliability characteristics for magnetic tunnel junctions with a thin MgO dielectric film

Choi

Kim

et al. 2016

Semicond. Sci. Technol.

View full text Add to dashboard Cite

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Fast Switching in Thermoelectric Spin-Transfer Torque MRAM with Temperature Increase Caused by Peltier Effect

Harnsoongnoen

Surawanitkun

2015

Integrated Ferroelectrics

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Experimental investigation of cooling performance in electronic instruments

Bensafi,

Kaid,

Shnawa

et al. 2023

THERM SCI

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This study explores the principle of producing cold through heat absorption at a temperature lower than ambient temperature, which requires the use of an endothermic mechanism. Specifically, the study focuses on evaluating multiple thermoelectric coolers using aluminum water heat exchangers as a means of validating a proposed correlation through a series of experiments. The system utilizes water as a coolant and a thermoelectric cooler coupled with a heatsink to cool it. The cooling power of the system is controlled by adjusting the temperatures of the hot and cold heatsinks and the coolant flow through the heat exchanger based on governing equations. In addition to assessing the cold-side temperature, the research also investigates the system COP of the thermoelectric system. The results indicate that a thermoelectric cooler with a lower thermal resistance is more effective at cooling and can achieve a lower cold-side temperature. Conversely, a cold-side heatsink with a higher thermal resistance provides lower cooling power. Two experiments were conducted to acquire comprehensive data on the thermoelectric devices, and the obtained results and experience were used to categorize the utilization of the Peltier model. The first experiment achieved an 84% success rate, while the second experiment achieved a rate of around 97- 95%, highlighting the potential for further experimentation with alternative configurations.

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Joule Heating and Peltier Effects in Thermoelectric Spin-Transfer Torque Mram Devices Using Finite Element Modeling

Cited by 3 publications

References 13 publications

Temperature dependence of reliability characteristics for magnetic tunnel junctions with a thin MgO dielectric film

Temperature dependence of reliability characteristics for magnetic tunnel junctions with a thin MgO dielectric film

Fast Switching in Thermoelectric Spin-Transfer Torque MRAM with Temperature Increase Caused by Peltier Effect

Experimental investigation of cooling performance in electronic instruments

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