We have fabricated sandwich type MgB 2 Josephson junctions by using a Nb thin film as the counter electrode. The junction either contained a normal Au barrier layer or not. Superconducting MgB 2 films were prepared on sapphire substrates by either in-situ annealing of cosputtered Mg and B mixture films or ex-situ diffusion annealing of B precursor films in Mg vapor. Surface of the MgB 2 base film was mechanically dry-polished with 1/4 m diamond powder to remove nonsuperconducting residues and subsequently cleaned by using argon ion beam. Junction was defined on an area of 4 m 4 m through a 150 nm thick SiO x insulating layer by lift-off and completed by depositing a normal thin Au layer (0 10 nm) and finally a 150 nm thick Nb counter electrode. c0 was at least 30 K for the MgB 2 base electrode and 9 K for the Nb counter electrode. Current-voltage curves showed typical Josephson transition characteristics at critical currents. The junction critical current was modulated periodically in response to an applied magnetic field, in qualitative agreement with the theory of the Fraunhoffer diffraction.