Johnson–Nyquist Noise of the Quantized Hall Resistance

Schurr, J.; Moser, Harald; Pierz, K.; Ramm, G.; Kibble, B P

doi:10.1109/tim.2010.2088050

Cited by 21 publications

(22 citation statements)

References 17 publications

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“…The current fluctuations caused by the device were obtained by measuring the noise of the voltage drop across a 12.9 k shunt resistor, which was connected to the drain contact of the device and the outer conductor and was cooled to 4 K in a liquid helium storage Dewar. The measured voltage fluctuations were amplified by a low-noise preamplifier [35] (equivalent root mean square input noise voltage: 0.5 nV/ÝHz) and recorded by an analog-to-digital converter model PXI-4461 from National Instruments [36] at a scan rate of 20 000 Hz. Each trace of voltage fluctuations was recorded for 2 sec and subsequently Fourier transformed to obtain a spectrum in the frequency range of 20 to 5000 Hz.…”

Section: Experimental Methodsmentioning

confidence: 99%

Nonequilibrium mesoscopic conductance fluctuations as the origin of 1/f noise in epitaxial graphene

et al. 2016

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We investigate the 1/f noise properties of epitaxial graphene devices at low temperatures as a function of temperature, current, and magnetic flux density. At low currents, an exponential decay of the 1/f noise power spectral density with increasing temperature is observed that indicates mesoscopic conductance fluctuations as the origin of 1/f noise at temperatures below 50 K. At higher currents, deviations from the typical quadratic current dependence and the exponential temperature dependence occur as a result of nonequilibrium conditions due to current heating. By applying the Kubakaddi theory [S. S. Kubakaddi, Phys. Rev. B 79, 075417 (2009)], a model describing the 1/f noise power spectral density of nonequilibrium mesoscopic conductance fluctuations in epitaxial graphene is developed and used to determine the energy loss rate per carrier. In the regime of Shubnikov-de Haas oscillations, a strong increase of 1/f noise is observed, which we attribute to an additional conductance fluctuation mechanism due to localized states in quantizing magnetic fields. When the device enters the regime of quantized Hall resistance, the 1/f noise vanishes. It reappears if the current is increased and quantum Hall breakdown sets in.

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Section: Experimental Methodsmentioning

confidence: 99%

Nonequilibrium mesoscopic conductance fluctuations as the origin of 1/f noise in epitaxial graphene

et al. 2016

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“…I N A RECENT paper [1], it has been shown that a coaxial setup [2] and a conventional lock-in amplifier, combined with an ultra-low noise preamplifier, are sufficiently precise to measure the low thermal noise of the quantum Hall resistance (QHR) [3], [4]. The Johnson-Nyquist relation [5], which is well established for conventional resistors, was verified for the quantized Hall resistance, as predicted, e.g., in [6].…”

Section: Introductionmentioning

confidence: 73%

“…It follows from the equivalent circuit of the multiterminal QHR device [14] that, when a coaxial voltmeter is connected to the terminal k, the detected Hall voltage originates only from those electrons that are emitted and absorbed by terminal k and by terminal l, i.e., the same terminals as relevant to a resistance measurement. 1 According to [6] and [16], the mean-square noise voltage densities S 1 and S 2 , which are defined as the mean-square voltage fluctuation per bandwidth at channels 1 and 2, respectively, are given by…”

Section: A Connection Scheme and Theoretical Expectationmentioning

confidence: 99%

“…Applying an external dc to the QHR device affects the spectral noise densities in three ways: First, the temperature of the QHR device increases due to Joule heating (see, e.g., [1] and [19]). Second, white shot noise could occur [6], [20] but is predicted to be absent in ideal quantum conductors with perfect nonballistic electron transmission.…”

Section: A Connection Scheme and Theoretical Expectationmentioning

confidence: 99%

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Noise and Correlation Study of Quantum Hall Devices

Schurr

Ahlers

Callegaro

2013

IEEE Trans. Instrum. Meas.

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We report voltage noise measurements on the cryogenic quantum Hall resistance (QHR) and present two new findings to illustrate the potential of the two-channel instrumentation used. Without applied current, only Johnson-Nyquist noise is present, but at two separate pairs of quantum Hall terminals, it can be cross-correlated via a longitudinal resistance. With applied current, excess noise due to dissipation bursts appears, which increases dramatically with the noninteger fraction of the filling factor.

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“…While a low noise figure is essential to precision QHR measurements, this topic has not been studied very much so far. Therefore, we measured the excess noise of a graphene device in a coaxial resistance ratio bridge by means of a lock-in amplifier [14] as well as directly by a digital data acquisition system as described in [9]. Fig.…”

Section: Spectral Noise Powermentioning

confidence: 99%

First ac measurements of the quantum Hall effect in epitaxial graphene

Kalmbach

Schurr

Ahlers

et al. 2014

29th Conference on Precision Electromagnetic Measurements (CPEM 2014)

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We present first ac measurements of the quantized Hall resistance in graphene. Remarkably, the first results are very similar to that of conventional, unshielded GaAs devices. The future exploration of the detailed loss mechanisms in graphene by established ac analysis techniques thus gives a good chance to understand and to eliminate the ac losses, enabling a future graphene-based impedance standard.Index Terms -Graphene, quantum Hall effect, impedance, spectral noise density.

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Johnson–Nyquist Noise of the Quantized Hall Resistance

Cited by 21 publications

References 17 publications

Nonequilibrium mesoscopic conductance fluctuations as the origin of 1/f noise in epitaxial graphene

Nonequilibrium mesoscopic conductance fluctuations as the origin of 1/f noise in epitaxial graphene

Noise and Correlation Study of Quantum Hall Devices

First ac measurements of the quantum Hall effect in epitaxial graphene

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