Johnson and shot noises in intersubband detectors

Delga, Alexandre; Doyennette, Laetitia; Carras, Mathieu; Trinité, Virginie; Bois, P.

doi:10.1063/1.4803447

Cited by 26 publications

(15 citation statements)

References 19 publications

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“…2(b)]. The QCD differential resistance model is based on the work of Delga et al [26]. All scattering transitions between subbands are replaced by a conductance.…”

Section: Introductionmentioning

confidence: 99%

43 μm quantum cascade detector in pixel configuration

Harrer¹,

Schwarz²,

Schuler³

et al. 2016

Opt. Express

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We present the design simulation and characterization of a quantum cascade detector operating at 4.3μm wavelength. Array integration and packaging processes were investigated. The device operates in the 4.3μm CO₂ absorption region and consists of 64 pixels. The detector is designed fully compatible to standard processing and material growth methods for scalability to large pixel counts. The detector design is optimized for a high device resistance at elevated temperatures. A QCD simulation model was enhanced for resistance and responsivity optimization. The substrate illuminated pixels utilize a two dimensional Au diffraction grating to couple the light to the active region. A single pixel responsivity of 16mA/W at room temperature with a specific detectivity D^* of 5⋅10⁷ cmHz/W was measured.

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“…2(b)]. The QCD differential resistance model is based on the work of Delga et al [26]. All scattering transitions between subbands are replaced by a conductance.…”

Section: Introductionmentioning

confidence: 99%

43 μm quantum cascade detector in pixel configuration

Harrer¹,

Schwarz²,

Schuler³

et al. 2016

Opt. Express

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show abstract

“…At low temperature, the intersubband detectors like QDIP and DWELL usually show no 1/f noise contribution due to the unipolar nature of devices and the maturity of III-V technology. 24 Hence, the two major noise contributions are Johnson noise and shot or generation-recombination (G-R) noise. Johnson noise is caused by the random thermal motion of charge carriers, and the Johnson noise current I th in terms of bias voltage V can be expressed as…”

Section: A Dark Current and Noise Power Spectral Densitymentioning

confidence: 99%

Noise, gain, and capture probability of p-type InAs-GaAs quantum-dot and quantum dot-in-well infrared photodetectors

Wolde

Lao

Perera

et al. 2017

Journal of Applied Physics

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We report experimental results showing how the noise in a Quantum-Dot Infrared photodetector (QDIP) and Quantum Dot-in-a-well (DWELL) varies with the electric field and temperature. At lower temperatures (below $100 K), the noise current of both types of detectors is dominated by generation-recombination (G-R) noise which is consistent with a mechanism of fluctuations driven by the electric field and thermal noise. The noise gain, capture probability, and carrier life time for bound-to-continuum or quasi-bound transitions in DWELL and QDIP structures are discussed. The capture probability of DWELL is found to be more than two times higher than the corresponding QDIP. Based on the analysis, structural parameters such as the numbers of active layers, the surface density of QDs, and the carrier capture or relaxation rate, type of material, and electric field are some of the optimization parameters identified to improve the gain of devices.

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“…We can identify three regions: a low frequency noise generated by external vibrations (100 Hz -1 kHz), a plateau revealing the generationrecombination noise of the QWIP (1 kHz -10 or 100 kHz), and the cut-off of the amplifier (100 kHz -1 MHz; the cutoff frequencies are f c = 500 kHz and f c = 400 kHz, for gain resistances R G = 10 6 Ω and R G = 10 7 Ω, respectively, according to the amplifier data-sheet 27 ). We note that ISB detectors do not typically show 1/f noise owing to the high quality of III-V materials and the low number of carriers involved 28 . Above 10 kHz for the 7 µm patch detector, and above 40 kHz for the 9 m patch detector, we notice that the noise current increases as function of the frequency: this effect has been previously reported in the literature 29 and can be directly related to the capacitance (of a few tens of pF) of the coaxial cable, C BNC , that connects the detector to the trans-impedance amplifier (see , where I photo is the photocurrent generated by the 300 K background and I dark (T) is the thermally activated dark current that increases exponentially with temperature.…”

mentioning

confidence: 93%

Noise characterization of patch antenna THz photodetectors

Palaferri

Todorov

Gacemi

et al. 2018

Applied Physics Letters

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Current noise fluctuations have been investigated in terahertz (THz) quantum well photodetectors embedded in antennacoupled photonic architectures, and compared with standard substrate-coupled mesa detectors. The noise measurements give a value of the photoconductive gain that is in excellent agreement with that extracted from previous responsivity calibrations. Moreover, our results confirm that the noise equivalent power (NEP) of the antenna-coupled devices is of the order of 0.2 pW/Hz 0.5. This low NEP value and the wide band frequency response (~ GHz) of the detectors are ideal figures for the development of heterodyne receivers that are, at present, a valuable technological solution to overcome the current limitation of THz sensors.

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Johnson and shot noises in intersubband detectors

Cited by 26 publications

References 19 publications

43 μm quantum cascade detector in pixel configuration

43 μm quantum cascade detector in pixel configuration

Noise, gain, and capture probability of p-type InAs-GaAs quantum-dot and quantum dot-in-well infrared photodetectors

Noise characterization of patch antenna THz photodetectors

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