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Dueñas, S.; Barbolla, J.; Kola, R. R.; Sullivan, Patrick A.

doi:10.1023/a:1008901624514

Cited by 17 publications

(15 citation statements)

References 9 publications

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“…electrochemical battery) and the voltage induced across the load resistor during bubble self-oscillation was measured as a function of time. The electrodes were produced out of tantalum, which was selected because of superior properties of its anodic oxide, most notably a high dielectric constant equal to 25 and a high breakdown electric field4567. The tantalum film was deposited on both sides of the quartz REWOD chip in order to bridge the laser drilled air inlet hole through the chip and provide an electrical connection between the back side of the chip and a circular REWOD electrode on the front side of the chip.…”

Section: Resultsmentioning

confidence: 99%

“…Blue dots represent simulation results for the bubble oscillation period τ , while the blue line represents the best fit of the form τ ~ H . Red dots represent experimental results for the bubble oscillation period τ , while the magenta line represents the best fit of the form τ ~ H 4. The following values are used: H 0 = D 0 = 0.16 mm.…”

Section: Figurementioning

confidence: 99%

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Bubbler: A Novel Ultra-High Power Density Energy Harvesting Method Based on Reverse Electrowetting

Hsu

Manakasettharn

Taylor

et al. 2015

Sci Rep

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We have proposed and successfully demonstrated a novel approach to direct conversion of mechanical energy into electrical energy using microfluidics. The method combines previously demonstrated reverse electrowetting on dielectric (REWOD) phenomenon with the fast self-oscillating process of bubble growth and collapse. Fast bubble dynamics, used in conjunction with REWOD, provides a possibility to increase the generated power density by over an order of magnitude, as compared to the REWOD alone. This energy conversion approach is particularly well suited for energy harvesting applications and can enable effective coupling to a broad array of mechanical systems including such ubiquitous but difficult to utilize low-frequency energy sources as human and machine motion. The method can be scaled from a single micro cell with 10−6 W output to power cell arrays with a total power output in excess of 10 W. This makes the fabrication of small light-weight energy harvesting devices capable of producing a wide range of power outputs feasible.

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Section: Resultsmentioning

confidence: 99%

Section: Figurementioning

confidence: 99%

Bubbler: A Novel Ultra-High Power Density Energy Harvesting Method Based on Reverse Electrowetting

Hsu

Manakasettharn

Taylor

et al. 2015

Sci Rep

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“…( ) 000 1-ρρ α  =+  TT ( 1 ) In order to better understand the electrical properties of tantalum/tantalum oxide multilayers, we first assumed that the charge carrier concentration and mobility are high. To have an equivalent parameter in terms of structure which will be noted , mobility and charge carrier concentration can be brought back to the amount of metal present in the met sub-layers under the amount of insulator in the ox sublayers.…”

Section: Conductivity Measurements and Discussionmentioning

confidence: 99%

“…Tantalum oxide compound has great technological interest, particularly because of its optical and electrical performances [1][2][3]. This kind of material has attracted huge attention in recent years due to its potential applications as high refractive index materials in multilayered interference filters [4], as anti-reflecting coatings for solar cells [5], as optical waveguides [6] and as capacitor dielectric in high density dynamic random access memories (DRAMs) [7][8][9].…”

Section: Introductionmentioning

confidence: 99%

Interdependence of structural and electrical properties in tantalum/tantalum oxide multilayers

Cacucci

Loffredo

Potin

et al. 2013

Surface and Coatings Technology

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Dc reactive sputtering was used to deposit tantalum metal/oxide periodic nanometric multilayers using the innovative technique namely, the reactive gas pulsing process (RGPP). Different pulsing periods were used for each deposition to produce metal-oxide periodic alternations included between 5 and 80 nm. HighlightsDc reactive sputtering was implemented with the reactive gas pulsing process.Combination of the structural analyses allowed determining the composition of different phases.HRTEM pointed out the dependence between electrical properties and nanometric and periodic Ti/fcc-TiO/a-TiO 2 multilayers.

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“…Researchers have prepared Ta 2 O 5 films by various methods, such as sputtering, [5] thermal oxidation, [6] low-pressure chemical vapor deposition (LPCVD), [7] anodization, [8] and atomic layer deposition (ALD). [9] Although uniform, dense Ta 2 O 5 film can be obtained by the thermal oxidation of tan-talum in oxygen ambience, the thermal oxidation method has some shortcomings, such as high process temperature, slow oxidation rate, and relatively long temperature ramping time.…”

Section: Introductionmentioning

confidence: 99%

Effects of O₂/Ar ratio and annealing temperature on electrical properties of Ta₂O₅film prepared by magnetron sputtering

Huang¹,

Pei-Hong²,

Chen³

2013

Chinese Phys. B

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The effects of the oxygen-argon ratio on electric properties of Ta 2 O 5 film prepared by radio-frequency magnetron sputtering were investigated. The Ta 2 O 5 partially transforms from the amorphous phase into the crystal phase when annealing temperatures are 800 • C or higher. The lattice constant of Ta 2 O 5 decreases with the increase of the O 2 /Ar ratio, which indicates that oxygen gas in the working gas mixture contributes to reducing the density of oxygen vacancies during the deposition process. For the films deposited in working gas mixtures with different O 2 /Ar ratios and subsequently annealed at 700 • C, the effective dielectric constant is increased from 14.7 to 18.4 with the increase of the O 2 /Ar ratio from 0 to 1. Considering the presence of an SiO 2 layer between the film and the silicon substrate, the optimal dielectric constant of Ta 2 O 5 film was estimated to be 31. Oxygen gas in the working gas mixture contributes to reducing the density of oxygen vacancies, and the oxygen vacancy density and leakage current of Ta 2 O 5 film both decrease with the increase of the O 2 /Ar ratio. The leakage current decreases after annealing treatment and it is minimized at 700 • C. However, when the annealing temperature is 800 • C or higher, it increases slightly, which results from the partially crystallized Ta 2 O 5 layer containing defects such as grain boundaries and vacancies.

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Untitled

Cited by 17 publications

References 9 publications

Bubbler: A Novel Ultra-High Power Density Energy Harvesting Method Based on Reverse Electrowetting

Bubbler: A Novel Ultra-High Power Density Energy Harvesting Method Based on Reverse Electrowetting

Interdependence of structural and electrical properties in tantalum/tantalum oxide multilayers

Effects of O₂/Ar ratio and annealing temperature on electrical properties of Ta₂O₅film prepared by magnetron sputtering

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Untitled

Cited by 17 publications

References 9 publications

Bubbler: A Novel Ultra-High Power Density Energy Harvesting Method Based on Reverse Electrowetting

Bubbler: A Novel Ultra-High Power Density Energy Harvesting Method Based on Reverse Electrowetting

Interdependence of structural and electrical properties in tantalum/tantalum oxide multilayers

Effects of O2/Ar ratio and annealing temperature on electrical properties of Ta2O5film prepared by magnetron sputtering

Contact Info

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Effects of O₂/Ar ratio and annealing temperature on electrical properties of Ta₂O₅film prepared by magnetron sputtering