Jet Polishing of Semiconductors

Unvala, B. A.; Holt, D. B.; San, Aung

doi:10.1149/1.2404194

Cited by 11 publications

(3 citation statements)

References 7 publications

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“…Electrolytic jets have also been employed in etching and finishing applications. A review of the reported literature in this area indicates that electrolytic jets are most frequently employed for electron microscopic sample preparation and for polishing semiconductor materials (8)(9)(10)(11)(12)(13)(14)(15)(16)(17)(18)(19). Electrolytes used are generally strong acid solutions.…”

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Jet and Laser‐Jet Electrochemical Micromachining of Nickel and Steel

Datta

Romankiw

Vigliotti

et al. 1989

J. Electrochem. Soc.

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Experimental results on jet and laser‐jet electrochemical micromachining of nickel and steel in neutral solutions of sodium chloride and sodium nitrate are reported. In the absence of a laser beam, a nitrate solution is better suited for micromachining at high current densities, since it yields high machining rates and relatively low overcutting. In the presence of a laser beam, however, nitrate solution is found to be unsuitable for micromachining, since oxygen evolution is the dominant anodic reaction even at high current densities. In chloride solution, on the other hand, metal dissolution reaction is independent of laser power, but the laser beam helps in focusing the applied current into the machining area thereby increasing the effective machining rate and precision.

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confidence: 99%

Jet and Laser‐Jet Electrochemical Micromachining of Nickel and Steel

Datta

Romankiw

Vigliotti

et al. 1989

J. Electrochem. Soc.

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“…Further work has shown that an improved version of this equipment will not only polish slices of Si, GaAS, and GaP as well as Ge, but it can be used to shape silicon slices that have been masked. This work is reported in the third paper in this series (11).…”

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confidence: 76%

Jet Polishing of Semiconductors

Chase

Holt

Unvala

1972

J. Electrochem. Soc.

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A method has been developed for thinning localized regions in GaP for examination by means of transmission electron microscopy. A jet of chlorine in methanol was used to chemically polish slices from the P(lll) face. To thin specimens from the Ga(lll) face the same reagent and apparatus were used, but a voltage was applied so that the specimen was anodic with respect to an electrode inserted in the jet. In this case the surface was free from etch pits, but yellowish surface films were formed which could be removed by a short chemical polish. GaP is optically transparent, but if it is illuminated only with wavelengths for which it has a sufficiently large absorption coefficient, it can be arranged that significant transmission of light begins only when the material is thin enough for electron transmission. This light can be detected by a photomultiplier and the resultant signal used to automatically terminate the thinning. The principles of this method are discussed, and the equipment required for its utilization is described. Large transparent areas were produced in material of various dopings and defect contents with a 100% success rate.

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“…Therefore, the ( 1 1 1 ) B surface should be more chemically active than the (111) A surface. 24 The Ga faces are etched and the P faces are polished in aqua regia. Usually, the faces are distinguished by their chemical characteristics in halogen (for example Cl 2 ) saturated methanol 15 or in hot aqua regia.…”

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confidence: 99%