Jacutingaite family: An efficient platform for coexistence of spin valley Hall effects, valley spin-valve realization, and layer spin crossover

Tunable polarization properties of charge, spin, and valley in Janus VSiGeZ4 (Z = N, P, As) monolayers

“…Thanks to the fascinating physical properties and promising device applications, the coupling effects of spin and valley in twodimensional (2D) materials have received tremendous attention in recent years. 4,[6][7][8][9][10][11] In general, suitable symmetry breaking is the prerequisite toward the realization of spinvalley coupling in 2D systems. Fortunately, 2D ferrovalley materials, 12,13 a class of 2D magnetic materials with spontaneous valley polarization, have coexistence of inversion symmetry (P) breaking and time-reversal symmetry (T) breaking, providing a platform to simultaneously exploit charge, spin, and valley.…”

Electric-field-driven ferromagnetic response in Janus MnReX3 (X = Se, S) monolayer via asymmetric interface orbital hybridization

“…Therefore, the 2D van der Waals materials with a lower symmetry and typical magnetic ions become an ideal candidate to obtain an electric-field-responsive magnetic feature. Breaking centrosymmetry also plays a critical role into inducing spin-valley locking, electric polarization, and valley splitting [18]. Some particular 2D materials also inherently possess broken centrosymmetry [19][20][21], such as MX family.…”

First principles study of BAs/MoSi2N4 van der Waals heterostructure: tunable electronic and optical properties via vertical strain

“…The successful preparation of two-dimensional (2D) graphene in 2004 by Geim et al has stimulated researchers' enthusiasm to explore various 2D materials because of their novel physical properties and potential applications for versatile applications in the future. 1,2 Owing to quantum confinement effects, 2D single-layer materials exhibit many unique properties, such as topology, 3,4 spin valley properties, 5 and Rashba spin splitting. 6 Graphene has very high carrier mobility, however, its zero bandgap limits its application for high-speed electronics.…”