1992
DOI: 10.30965/9783657768196
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Jacques Maritain

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“…In the case of the hot-pressed Ti3SiC2 sample at 1550 °C, hardness of 7.1 GPa has been reported, which according to the corresponding X-ray diffraction pattern, is attributed to the presence of TiC in the sample as the main peak resulting from the decomposition of Ti3SiC2 at 1550 °C. By increasing the temperature, also there is high TiC particles in this sample but grain growth over comes to the high hardness of TiC particles (28)(29)(30)(31)(32)(33)(34)(35) and causes the decrease in the hardness. Fig.…”
Section: Characterization Of the Samplesmentioning
confidence: 87%
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“…In the case of the hot-pressed Ti3SiC2 sample at 1550 °C, hardness of 7.1 GPa has been reported, which according to the corresponding X-ray diffraction pattern, is attributed to the presence of TiC in the sample as the main peak resulting from the decomposition of Ti3SiC2 at 1550 °C. By increasing the temperature, also there is high TiC particles in this sample but grain growth over comes to the high hardness of TiC particles (28)(29)(30)(31)(32)(33)(34)(35) and causes the decrease in the hardness. Fig.…”
Section: Characterization Of the Samplesmentioning
confidence: 87%
“…Therefore, it is important to make high purity and fully dense bulk Ti3SiC2 samples. Zhou et al [31] were the first who synthesize the ternary compound via a chemical reaction between Si, graphite, and TiH2, at 2000 ºC, followed by the work of Nickl et al [32] by using the chemical vapour deposition (CVD) method. During the last decade, different methods have been used to synthesize bulk Ti3SiC2, such as hot isostatic pressing (HIP), reactive sintering, arc melting, hot pressing (HP), and others.…”
Section: Introductionmentioning
confidence: 99%