ITEP Bernas ion source with additional electron beam

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As the technology and applications continue to grow up, the development of plasma and ion sources with clearly specified characteristic is required. Therefore comprehensive numerical studies at the project stage are the key point for ion implantation source manufacturing (especially for low energy implantation). Recently the most commonly encountered numerical approach is the Monte Carlo particle-in-cell (MCPIC) method also known as particle-in-cell method with Monte Carlo collisions. In ITEP the 2D3V numerical code PICSIS-2D realizing MCPIC method was developed in the framework of the joint research program. We present first results of the simulation for several materials interested in semiconductors. These results are compared with experimental data obtained at the ITEP ion source test bench.

Section: Numerical Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Bernas ion source discharge simulation

Roudskoy

Kulevoy

Petrenko

et al. 2008

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“…The ITEP Bernas ion source ͑IS͒ with additional e-beam was used. 4 It was found that the highest decaborane negative ion current was extracted when the cathode and anode of discharge chamber are electrically connected ͑short circuit between them͒. The experiments with both the convenient polarity and the inversed one at the discharge electrodes resulted the significant decrease of extracted current.…”

Section: Decaborane Negative Ion Generationmentioning

confidence: 94%

Status of ITEP decaborane ion source program

Kulevoy

Petrenko

Kuibeda

et al. 2008

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The joint research and development program is continued to develop steady-state ion source of decaborane beam for ion implantation industry. Both Freeman and Bernas ion sources for decaborane ion beam generation were investigated. Decaborane negative ion beam as well as positive ion beam were generated and delivered to the output of mass separator. Experimental results obtained in ITEP are presented.

“…10 Figure 2͑a͒ is a schematic of the ITEP Bernas ion source. After optimizing the electron beam charge states as high as Sn +6 were measured by magnetic separation.…”

Section: High Charge State Ion Sourcesmentioning

confidence: 99%

Ion sources for the varying needs of ion implantation

Hershcovitch

Batalin

Бугаев

et al. 2006

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A joint research and development effort whose ultimate goal is to develop steady-state intense ion sources to meet the needs of the two energy extremes of ion implanters ͑mega-electron-volt and of hundreds of electron-volt͒ has been in progress for the past two years. Present day high-energy ion implanters utilize low charge state ͑usually single charge͒ ion sources in combination with rf accelerators. Usually, a MeV linear accelerator is used for acceleration of a few milliamperes. It is desirable to have instead an intense, high charge state ion source on a relatively low-energy platform ͑dc acceleration͒ to generate high-energy ion beams for implantation. This endeavor has already resulted in very high steady-state output currents of higher charge states antimony and phosphorous ions. Low-energy ion implantation is performed presently by decelerating high-energy extracted ions. Consequently, output currents are low due to space charge problems. Contamination is also a problem due to gases and plasmas employed to mitigate the space charge issues. Our efforts involve molecular ions and a plasmaless/gasless deceleration method. A program overview is presented in this article. Although source specifics are described in accompanying papers, only this article contains our most recent results.