Issues in accelerated electromigration of solder bumps

Rinne, G.A.

doi:10.1016/j.microrel.2003.09.001

Cited by 65 publications

(26 citation statements)

References 5 publications

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“…Relevant studies indicate that electromigration can induce significant microstructural changes in solder alloys, including void nucleation and propagation, hillock formation, and phase segregation. [1][2][3][4][5][6][7][8][9][10][11][12] Eutectic SnPb alloy is the most common solder material in microelectronic packaging. Brandenburg et al 3 and Rinne 7 found that electromigration could force the Pb atoms to migrate along the electron flow and accumulate at the anode side.…”

Section: Introductionmentioning

confidence: 99%

Electromigration-Induced Bi Segregation in Eutectic SnBi Solder Joint

Chen

Lin

2007

Journal of Elec Materi

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Section: Introductionmentioning

confidence: 99%

Electromigration-Induced Bi Segregation in Eutectic SnBi Solder Joint

Chen

Lin

2007

Journal of Elec Materi

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“…Current crowding, Joule heating, and solder grain orientation also influence the rate of electromigration. 1,5,9,10 Many researchers have investigated the effect of grain orientation on electromigration. Kinney et al 1 studied the influence of crystal orientation on intermetallic growth in lead-free single-crystal solder samples subjected to uniaxial current.…”

Section: Mechanism Of Electromigration and Controlling Factorsmentioning

confidence: 99%

Effect of Grain Boundary Misorientation on Electromigration in Lead-Free Solder Joints

Tasooji

Lara

Lee

2014

Journal of Elec Materi

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Reduction in microelectronic interconnect size gives rise to solder bumps consisting of few grains, approaching a single-or bicrystal grain morphology in C4 bumps. Single grain anisotropy, individual grain orientation, presence of easy diffusion paths along grain boundaries, and the increased current density in these small solder bumps aggravate electromigration. This reduces the reliability of the entire microelectronic system. This paper focuses on electromigration behavior in Pb-free solder, specifically the Sn-0.7 wt.%Cu alloy. We discuss the effects of texture, grain orientation, and grain boundary misorientation angle on electromigration (EM) and intermetallic compound formation in EM-tested C4 bumps. The detailed electron backscatter diffraction (EBSD) analysis used in this study reveals the greater influence of grain boundary misorientation on solder bump electromigration compared with the effect associated with individual grain orientation.

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“…In the eutectic SnPb solder, it was found that electromigration could force Pb atoms to migrate along the direction of electron flow and accumulate at the anode side. 6,8 On the contrary, Sn atoms moved in the opposite direction and segregated at the cathode side. The eutectic SnBi solder also exhibited a similar electromigration behavior, i.e.…”

Section: Introductionmentioning

confidence: 99%

“…3 Relevant studies indicate that electromigration can induce significant microstructural changes and different intermetallic growth in the solder joint systems. [4][5][6][7][8][9][10][11][12][13] The microstructural changes include void nucleation and propagation, hillock formation, and phase segregation. In the eutectic SnPb solder, it was found that electromigration could force Pb atoms to migrate along the direction of electron flow and accumulate at the anode side.…”

Section: Introductionmentioning

confidence: 99%

Effects of Copper Doping on Microstructural Evolution in Eutectic SnBi Solder Stripes under Annealing and Current Stressing

Chen

Huang

Liao

et al. 2007

Journal of Elec Materi

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Effects of Cu doping on the microstructural evolution in the eutectic SnBi solder stripes under annealing and current stressing were investigated. Coarsening of the Bi grains was observed in the eutectic SnBi solder upon annealing at 85°C. Doping of 1 wt.% Cu could significantly reduce the grain coarsening rate from 2.8 to 0.5 lm 3 /h. In addition to grain coarsening, mass accumulation of Bi at the anode and solder depletion at the cathode of the eutectic SnBi solder stripe stressed by a current of 1.3 · 10 4 A/cm 2 at 85°C were also observed. Doping of 1 wt.% Cu could also reduce the grain coarsening of the solder under current stressing; however, it resulted in an enhancement of the electromigration effect. Accumulation of Bi at the anode and the solder depletion at the cathode became more severe in the Cu-doped solder stripe.

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Issues in accelerated electromigration of solder bumps

Cited by 65 publications

References 5 publications

Electromigration-Induced Bi Segregation in Eutectic SnBi Solder Joint

Electromigration-Induced Bi Segregation in Eutectic SnBi Solder Joint

Effect of Grain Boundary Misorientation on Electromigration in Lead-Free Solder Joints

Effects of Copper Doping on Microstructural Evolution in Eutectic SnBi Solder Stripes under Annealing and Current Stressing

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