ISOVPE MCT films grown on pure and alloyed CdTe substrates with different crystalline orientations

Gilabert, U.; Heredia, E.; Trigubó, A.B.

doi:10.1016/j.jcrysgro.2006.07.015

Cited by 5 publications

(4 citation statements)

References 33 publications

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“…The ingots grown at a higher speed show 4 or 5 grains, which is also a good result for some applications ( Table 1 and Figure 4 ). These results are comparable to those described by U. Gilabert et al [ 30 ] and T.E. Schlesinger et al [ 31 ].…”

Section: Resultssupporting

confidence: 92%

Crystalline Quality, Composition Homogeneity, Tellurium Precipitates/Inclusions Concentration, Optical Transmission, and Energy Band Gap of Bridgman Grown Single-Crystalline Cd1−xZnxTe (0 ≤ x ≤ 0.1)

et al. 2021

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Cd1−xZnxTe (0 ≤ x ≤ 0.1) ingots were obtained by Bridgman’s method using two different speeds in order to find the optimal conditions for single-crystalline growth. Crystalline quality was studied by chemical etching, the elemental composition by wavelength dispersive spectroscopy (WDS), tellurium (Te) precipitates/inclusions concentration by differential scanning calorimetry (DSC), optical transmission by Fourier transformed infrared spectrometry (FTIR), and band gap energy (Egap) by photoluminescence (PL). It was observed that the ingots grown at a lower speed were those of the best crystalline quality, having at most three grains of different crystallographic orientation. The average dislocations density in all of them were similar and correspond to materials of good quality. EPMA results indicated that the homogeneity in the composition was excellent in the ingots central part. The concentration of Te precipitates/inclusions in all ingots was below the instrument (DSC) detection limit, 0.25% wt/wt. In the case of wafers from Cd0.96Zn0.04Te and Cd0.90Zn0.10Te ingots, the optical transmission was better than that of commercial materials and varied between 60% and 70%, while for pure CdTe, the transmission range was between 50% and 55%, the latter being decreased by the presence of Te precipitates/inclusions. The band gap energy Eg of different wafers was experimentally obtained by PL measurements at 76 K. We observed that Eg increased with the Zn concentration of the wafers, following a linear regression comparable to those proposed in the literature, and consistent with the results obtained with other techniques.

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Section: Resultssupporting

confidence: 92%

Crystalline Quality, Composition Homogeneity, Tellurium Precipitates/Inclusions Concentration, Optical Transmission, and Energy Band Gap of Bridgman Grown Single-Crystalline Cd1−xZnxTe (0 ≤ x ≤ 0.1)

et al. 2021

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“…Owing to the low concentrations of Zn (cationic molar fraction = 0.043) and Se (anionic molar fraction = 0.044) in the ternary substrates used in this work [7] and keeping in mind that the epilayer thickness has been shown to be very similar and independent of the substrate used [8], it is reasonable to adopt the following statements:…”

Section: Djuric Modelmentioning

confidence: 99%

“…A possible explanation of the discrepancy is the deposition rate has a mixed control, as described in Eqs. (7) and (8).…”

Section: Comparison Between the Experimental And Simulated Compositiomentioning

confidence: 99%

Growth kinetics of ISOVPE HgCdTe epilayers obtained on alloyed CdTe substrates with different crystalline orientations

Gilabert

Moyano

Scarpettini³

et al. 2010

Journal of Crystal Growth

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“…Cadmium telluride (CdTe) is the ideal material of choice for room temperature (RT) radiation detectors 1 and an ideal substrate to epitaxially grow Hg 1− x Cd x Te (MCT) infrared photodetector materials 2 covering the whole infrared band from the near infrared (NIR) to the very long-wavelength infrared (VLWIR) region by tuning x . Besides, CdTe is widely used in optoelectronics and photovoltaics due to its ultrahigh absorption coefficient beyond 10 5 cm −1 and near-optimum direct energy bandgap of 1.5 eV at RT.…”

Section: Introductionmentioning

confidence: 99%

High-sensitivity CdTe phototransistors with the response spectrum extended to 1.65 μm

et al. 2022

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ISOVPE MCT films grown on pure and alloyed CdTe substrates with different crystalline orientations

Cited by 5 publications

References 33 publications

Crystalline Quality, Composition Homogeneity, Tellurium Precipitates/Inclusions Concentration, Optical Transmission, and Energy Band Gap of Bridgman Grown Single-Crystalline Cd1−xZnxTe (0 ≤ x ≤ 0.1)

Crystalline Quality, Composition Homogeneity, Tellurium Precipitates/Inclusions Concentration, Optical Transmission, and Energy Band Gap of Bridgman Grown Single-Crystalline Cd1−xZnxTe (0 ≤ x ≤ 0.1)

Growth kinetics of ISOVPE HgCdTe epilayers obtained on alloyed CdTe substrates with different crystalline orientations

High-sensitivity CdTe phototransistors with the response spectrum extended to 1.65 μm

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