Isotropic silicon etch characteristics in a purely inductively coupled SF6 plasma

Panduranga, Parashara; Abdou, Aly; Ren, Zhong; Pedersen, Rasmus H.; Nezhad, Maziar P.

doi:10.1116/1.5116021

Cited by 17 publications

(12 citation statements)

References 26 publications

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“…hBN was first exfoliated on a clean SiO 2 substrate and then transferred on top of the bottom electrode (Figure a,e) with a stamp made from a polydimethylsiloxane (PDMS) block and a polycarbonate (PC) film. , After top contact patterning (Figure b,f), the sandwiched hBN layer was isotropically removed via reactive ion etching (RIE) to form an underetched region of width d c between the top and bottom electrode (Figure c,g). Using SF 6 as the process gas increases the etch isotropy and hence lateral etching rate in the normally vertical directed RIE due to a high density of SF 5 * and F* radicals, which in turn are responsible for bulk etching. − The process steps, including spin-coating of the donor–acceptor polymer poly(diketopyrrolopyrrole-terthiophene) (PDPP), removal of PDPP via directional RIE, and deposition of the ionic liquid 1-ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide ([EMIM][TFSI]) as the gate electrode, complete the devices . Using ionic liquids as gate care should be taken to not exceed the electrochemical window which is defined by the difference between the oxidation and reduction potential of cations and anions.…”

Section: Resultsmentioning

confidence: 99%

High-Performance Vertical Organic Transistors of Sub-5 nm Channel Length

et al. 2021

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Miniaturization of electronic circuits increases their overall performance. So far, electronics based on organic semiconductors has not played an important role in the miniaturization race. Here, we show the fabrication of liquid electrolyte gated vertical organic field effect transistors with channel lengths down to 2.4 nm. These ultrashort channel lengths are enabled by using insulating hexagonal boron nitride with atomically precise thickness and flatness as a spacer separating the vertically aligned source and drain electrodes. The transistors reveal promising electrical characteristics with output current densities of up to 2.95 MA cm–2 at −0.4 V bias, on–off ratios of up to 106, a steep subthreshold swing of down to 65 mV dec–1 and a transconductance of up to 714 S m–1. Realizing channel lengths in the sub-5 nm regime and operation voltages down to 100 μV proves the potential of organic semiconductors for future highly integrated or low power electronics.

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Section: Resultsmentioning

confidence: 99%

High-Performance Vertical Organic Transistors of Sub-5 nm Channel Length

et al. 2021

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“…The shapes of the pre-tips made by isotropic ICP etching, such as the height and aspect ratio, are influenced by the mask design, which affects the gas supply and venting of reaction products of the pre-tip. Moreover, the profiles of the tips made with the conventional aperture mask and the “island mask” show clear differences [ 43 ]. The mask pattern shown in Figure 2 a was designed to investigate the effect of gas supply from different directions during the etching process.…”

Section: Resultsmentioning

confidence: 99%

Batch Fabrication of Silicon Nanometer Tip Using Isotropic Inductively Coupled Plasma Etching

et al. 2020

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This work reports a batch fabrication process for silicon nanometer tip based on isotropic inductively coupled plasma (ICP) etching technology. The silicon tips with nanometer apex and small surface roughness are produced at wafer-level with good etching homogeneity and repeatability. An ICP etching routine is developed to make silicon tips with apex radius less than 5 nm, aspect ratio greater than 5 at a tip height of 200 nm, and tip height more than 10 μm, and high fabrication yield is achieved by mask compensation and precisely controlling lateral etch depth, which is significant for large-scale manufacturing.

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“…The roughness associated with this etch is expected, due to its chemical nature, and can be undesirable in an optical context, for example leading to scattering. A detailed study of this etching process has been presented in [12].…”

Section: Sf 6 Etch Characteristicsmentioning

confidence: 99%

Hybrid Diamond/Silicon Suspended Integrated Photonic Platform using SF₆ Isotropic Etching

Panduranga

Abdou

Richter

et al. 2019

2019 IEEE 2nd British and Irish Conference on Optics and Photonics (BICOP)

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A hybrid diamond/silicon air-clad ridge waveguide platform is demonstrated. The air-clad structure coupled with the wide transmission window of diamond can allow for the use of this architecture over a large wavelength range, especially for the longer infrared wavelengths. In order to provide vertical confinement, the silicon substrate was isotropically etched using SF 6 plasma to create undercut diamond films. An in-depth analysis of the etch characteristics of this process was performed to highlight its potential to replace wet isotropic etching or XeF 2 isotropic vapour phase etching techniques. The performance of the waveguide at 1550 nm was measured, and yielded an average loss of 4.67 +/-0.47 dB/mm. Index Terms-diamond integrated photonics, infrared waveguides, isotropic etching, plasma etching, sulfur hexafluoride

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Isotropic silicon etch characteristics in a purely inductively coupled SF6 plasma

Abstract: Publisher's PDF, also known as Version of record Cyswllt i'r cyhoeddiad / Link to publication Dyfyniad o'r fersiwn a gyhoeddwyd / Citation for published version (APA):

Cited by 17 publications

References 26 publications

High-Performance Vertical Organic Transistors of Sub-5 nm Channel Length

High-Performance Vertical Organic Transistors of Sub-5 nm Channel Length

Batch Fabrication of Silicon Nanometer Tip Using Isotropic Inductively Coupled Plasma Etching

Hybrid Diamond/Silicon Suspended Integrated Photonic Platform using SF₆ Isotropic Etching

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Isotropic silicon etch characteristics in a purely inductively coupled SF6 plasma

Abstract: Publisher's PDF, also known as Version of record Cyswllt i'r cyhoeddiad / Link to publication Dyfyniad o'r fersiwn a gyhoeddwyd / Citation for published version (APA):

Cited by 17 publications

References 26 publications

High-Performance Vertical Organic Transistors of Sub-5 nm Channel Length

High-Performance Vertical Organic Transistors of Sub-5 nm Channel Length

Batch Fabrication of Silicon Nanometer Tip Using Isotropic Inductively Coupled Plasma Etching

Hybrid Diamond/Silicon Suspended Integrated Photonic Platform using SF6 Isotropic Etching

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Product

Resources

About

Hybrid Diamond/Silicon Suspended Integrated Photonic Platform using SF₆ Isotropic Etching