2008
DOI: 10.1002/pssc.200779184
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Isotropic interface roughness of pseudomorphic In0.74Ga0.26As/In0.52Al0.48As quantum wells grown on (411)A InP substrates by molecular beam epitaxy

Abstract: Anisotropy of the interface roughness has been investigated for pseudomorphic In0.74Ga0.26As/In0.52Al0.48As modulation doped quantum wells (MD‐QWs) grown on (411)A and (100) InP substrates by molecular beam epitaxy. Significant difference of low‐temperature electron mobility between two different in‐plane current directions ([0$ \bar 1 $1] and [011]) was observed for the (100) MDQW with a well width of 4 nm, while it was not observed for the (411)A MD‐QW. The observed electron mobility was analyzed by the theo… Show more

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