Isotope Studies of the Nature of IR-Active Center in c-Si:H(D)

Mukashev, B.N.; Tamendarov, M.F.; Tokmoldin, S. Zh.

doi:10.4028/www.scientific.net/msf.38-41.1039

Cited by 12 publications

(10 citation statements)

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“…This absorption band was assigned to either SiH n complex in a two-monolayer subsurface region or the SiH 2 ͑Si d͒ vacancy complex based on the work of Shi and co-workers. 23 This is in contradiction with the proposal of Mukashev and co-workers 24 that vacancy complexes in H-implanted c-Si correspond to frequencies higher than 2000 cm −1 . Using IR spectroscopic ellipsometry, Ossikovski and Drevillon 25 measured a shift in the Si-H vibrational frequency from 2000 to 1950 cm −1 with decreasing film thickness, in a-Si: H films deposited from a SiH 4 plasma.…”

Section: A Bch In Sicontrasting

confidence: 54%

Hydrogen in Si–Si bond center and platelet-like defect configurations in amorphous hydrogenated silicon

Agarwal¹,

Hoex²,

Sanden³

et al. 2004

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Hydrogen and deuterium in bond-centered (BC) and platelet-like configurations were detected in hydrogenated (and deuterated) amorphous silicon thin films deposited from SiH4 and SiD4 plasmas. Infrared absorptions due to these configurations were measured using in situ multiple total internal reflection Fourier transform infrared spectroscopy in a differential mode, where changes in the as-deposited a-Si:H(D) films were observed during D2(H2) plasma exposure. This method coupled with preferential replacement of H(D) by D(H) in BC and platelet-like configurations over the isolated bulk SiH(SiD) configurations enabled detection of these modes without interference from the strong SiH(SiD) absorptions. The Si–H(D) stretching modes for BC hydrogen and BC deuterium were observed at ∼1950 and ∼1420cm−1, respectively, while those for platelet-like hydrogen and deuterium were detected at ∼2033 and ∼1480cm−1, respectively.

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Section: A Bch In Sicontrasting

confidence: 54%

Hydrogen in Si–Si bond center and platelet-like defect configurations in amorphous hydrogenated silicon

Agarwal¹,

Hoex²,

Sanden³

et al. 2004

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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show abstract

“…22 For the centers with four 28 Normalized to unity, the natural abundances of the Si isotopes are: P 28 = 0.9223, P 29 = 0.0467, and P 30 = 0.0310. The probability of occurrence of a V( 28 Si-H) 4 center is 28 = P 4 28 . The probability of occurrence of a V( 28 Si-H) 3 ( 29 Si-H) center with a 29 Si atom in position i and three 28 Si atoms in locations j = i is π 29 = P 29 P 3 28 , but there are four possible locations for the 29 Si atom.…”

Section: B Intensities Of the Absorption Linesmentioning

confidence: 99%

“…The observation of only one Si-H or Si-D LVM associated to the above center under H 2 or D 2 growth seemed to imply a tetrahedral (T d ) symmetry of this center, as a lower symmetry would have produced more than one LVM. It was therefore suggested that the center responsible of the 2223 cm −1 LVM was either an interstitial silane molecule (i-SiH 4 ) or a lattice vacancy V whose four dangling bonds have trapped a H atom to give V(Si-H) 4 , noted VH 4 for simplicity, with four equivalents Si-H bonds, 2 shown in Fig. 1.…”

Section: Introductionmentioning

confidence: 99%

“…The T d symmetry of the center associated with the 2223 cm −1 LVM was confirmed by piezospectroscopic measurements, and this mode attributed to the T 2 stretch mode of the Si-H bonds of VH 4 (T 2 denotes a triply degenerate irreducible representation (IR) of T d ). 3 It has been stated 4 that, in silicon, stretching modes of H-related defects with wavenumbers below 2000 cm −1 are connected with H interstitial complexes while those with wavenumbers above 2000 cm −1 are connected with Hvacancy related defects. Therefore, Mukashev et al 4 concluded that the 2223 cm −1 LVM was due to VH 4.…”

Section: Introductionmentioning

confidence: 99%

“…3 It has been stated 4 that, in silicon, stretching modes of H-related defects with wavenumbers below 2000 cm −1 are connected with H interstitial complexes while those with wavenumbers above 2000 cm −1 are connected with Hvacancy related defects. Therefore, Mukashev et al 4 concluded that the 2223 cm −1 LVM was due to VH 4. This attribution is substantiated by ab initio calculations of the frequency 7 In addition to the above-discussed triply degenerate T 2 mode, a center like VH 4 or i-SiH 4 also displays a singly degenerate breathing stretch mode with A 1 symmetry, where the four Si-H bonds of the center vibrate in phase.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Si isotopic structure of the infrared absorption of the fully hydrogenated vacancy in silicon

Clerjaud

Pajot²

2013

The Journal of Chemical Physics

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An infrared absorption spectrum consisting in three lines observed around 2223 cm(-1) at liquid helium temperature characterizes a defect common in silicon crystals containing hydrogen. Several investigations of this spectrum have converged towards its assignment to a fully hydrogenated lattice vacancy defect V(Si-H)4. However, the fact that the ratios of the intensities of the three lines have been reported to be proportional to the natural abundances of the three silicon isotopes suggests that only one Si atom is involved in the defect, apparently contradicting the above assignment. In this paper, the spectroscopic investigation of this defect is revisited and the Si-related isotopic structures of V(Si-H)4 and V(Si-D)4 defects are modeled. It is shown that the near proportionalities observed between the intensities of these lines and the abundances of the Si isotopes are fortuitous. Our analysis of the isotope dependence of the 2223 cm(-1) line finds the V(Si-H)4 model to be correct and that the model of a single interstitial Si atom complexed with H can be rejected. The investigation is extended to the analysis of tetra-hydrogenated vacancy trapped by a carbon atom.

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Hydrogen Vibrations in Oxygen‐Doped Silicon

Tatarkiewicz¹,

Witthuhn²

1989

Physica Status Solidi (b)

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Short NotesK99 phys. stat. sol. (b) 154, K99 (1989) Subject classification: 61.70 and 63.20; S5.11 Max-Planck-Institut ftir Festkorperforschung, Stuttgart ) ( a ) and Physikalisches Institut der Universitat Erlangen-Niirnberg2 ) ( b ) Hydrogen Vibrations in Oxygen-Doped Silicon BY J. TATARKIEWICZ3) (a) and W. WITTHUHN (b) Since oxygen is a dominating impurity in silicon grown by the Czochralski method (for the recent review of oxygen properties in silicon see I l l ) and hydrogen is well known for its passivating capabilities (see 121), one could ask what is the influence of oxygen on hydrogen bonding in silicon. A recent paper by Mukashev et al. 131 on the nature of various hydrogen-related centers in proton-and deuteron-implanted silicon reports, among other local vibrational lines, three new bands at 856, 870, and 891 cm-l. The first band is ascribed to a divacancy-0-C-H complex, whereas the

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Isotope Studies of the Nature of IR-Active Center in c-Si:H(D)

Cited by 12 publications

References 0 publications

Hydrogen in Si–Si bond center and platelet-like defect configurations in amorphous hydrogenated silicon

Hydrogen in Si–Si bond center and platelet-like defect configurations in amorphous hydrogenated silicon

Si isotopic structure of the infrared absorption of the fully hydrogenated vacancy in silicon

Hydrogen Vibrations in Oxygen‐Doped Silicon

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