Isolator free optical I/O core transmitter by using quantum dot laser

Mizutani, K.; Yashiki, Kenichiro; Kurihara, Minoru; Suzuki, Yoshishige; Hagihara, Yoshihiro; Hatori, Nobuaki; Shimizu, Takanori; Urino, Yutaka; Nakamura, Takahiro; Kurata, K.; Arakawa, Yasuhiko

doi:10.1109/group4.2015.7305921

Cited by 14 publications

(5 citation statements)

References 5 publications

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“…In general, low values of α reduce the tendency for EOF-induced excitation of relaxation oscillations and coherence collapse, a trend already described by (8). This has initiated an interesting line of research towards feedback-resistant lasers [67], [68]. We also mention the promising development towards III-V lasers directly grown on silicon [68], [69], [72].…”

Section: Proposed Solutions To Reduce Feedback Sensitivitymentioning

confidence: 79%

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Toward a Feedback-Insensitive Semiconductor Laser

Lenstra

Schaijk

Williams

2019

IEEE J. Select. Topics Quantum Electron.

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Section: Proposed Solutions To Reduce Feedback Sensitivitymentioning

confidence: 79%

“…It has been shown recently that QD lasers show a much reduced sensitivity to EOF compared to QW lasers [67], [68]. This is explained by their low value of α which can even be zero [69].…”

Section: Proposed Solutions To Reduce Feedback Sensitivitymentioning

confidence: 99%

Toward a Feedback-Insensitive Semiconductor Laser

Lenstra

Schaijk

Williams

2019

IEEE J. Select. Topics Quantum Electron.

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“…It is demonstrated that the QD lasers have the potential to realize an isolator-free optical transmitter. Mizutani et al reported an isolator-free Si-photonics transmitter with a QD laser [ 157 ]. A high tolerance to optical feedback of −30 dB against near-end reflections was successfully achieved.…”

Section: Physics and Device Properties Of Qdsmentioning

confidence: 99%

Recent Developments of Quantum Dot Materials for High Speed and Ultrafast Lasers

et al. 2022

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Owing to their high integration and functionality, nanometer-scale optoelectronic devices based on III-V semiconductor materials are emerging as an enabling technology for fiber-optic communication applications. Semiconductor quantum dots (QDs) with the three-dimensional carrier confinement offer potential advantages to such optoelectronic devices in terms of high modulation bandwidth, low threshold current density, temperature insensitivity, reduced saturation fluence, and wavelength flexibility. In this paper, we review the development of the molecular beam epitaxial (MBE) growth methods, material properties, and device characteristics of semiconductor QDs. Two kinds of III-V QD-based lasers for optical communication are summarized: one is the active electrical pumped lasers, such as the Fabry–Perot lasers, the distributed feedback lasers, and the vertical cavity surface emitting lasers, and the other is the passive lasers and the instance of the semiconductor saturable absorber mirrors mode-locked lasers. By analyzing the pros and cons of the different QD lasers by their structures, mechanisms, and performance, the challenges that arise when using these devices for the applications of fiber-optic communication have been presented.

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“…In this regard, optical feedback-tolerant lasers, capable of avoiding the use of isolator, are advantageous for cost reduction as the use of isolator covers a large portion of the overall packaging expense. Several methods, in terms of material properties and device structure optimization, have been proposed in order to improve the feedback tolerance [4][5][6][7][8][9][10][11]. Recently, 12.5% reflection tolerance was achieved by 80 µm long distributed feedback (DFB) laser integrated with 120 µm long passive waveguide [7], and an improved suppression of coherence collapse was predicted in fano laser [8].…”

Section: Introductionmentioning

confidence: 99%

Analysis of the regimes of feedback effects in quantum dot laser

Hu²,

Tang

et al. 2022

J. Phys. D: Appl. Phys.

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We investigated the optical feedback effects on the static and dynamic characteristics of 1.3 μm quantum-dot (QD) Fabry-Pérot (FP) laser under reflection from -40 dB up to -8 dB. The onset of coherence collapse is determined as -14 dB from the optical and electrical spectra. Although the degradation in small signal modulation is reported above this critical feedback level, transmission operation with available eye diagram under higher feedback is demonstrated. Under 10 Gb/s modulation, there is no obvious degradation in eye diagram regarding the eye shape and extinction ratio up to feedback ratio of -8 dB. The higher feedback tolerance of QD laser under large signal modulation is attributed to the impact of gain compression. This high-speed feedback-resistant operation also indicates that QD laser is a promising light source for isolator-free photonic integrated circuits.

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Isolator free optical I/O core transmitter by using quantum dot laser

Cited by 14 publications

References 5 publications

Toward a Feedback-Insensitive Semiconductor Laser

Toward a Feedback-Insensitive Semiconductor Laser

Recent Developments of Quantum Dot Materials for High Speed and Ultrafast Lasers

Analysis of the regimes of feedback effects in quantum dot laser

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