2022
DOI: 10.1002/smll.202203658
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Isolating Single Sn Atoms in CuO Mesocrystal to Form Ordered Atomic Interfaces: An Effective Strategy for Designing Highly Efficient Mesocrystal Catalysts

Abstract: Figure 7. Schematic illustration of the Si hydrochlorination reaction process over the Sn/CuO MC catalyst.

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Cited by 6 publications
(4 citation statements)
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“…Considering that the angle at which C 2 H 2 molecules enter the encapsulated channels could also affect its adsorption efficiency, a dual-driven adsorption strategy of nanotraps co-controlled by both factors (binding sites and entry modes) was introduced, which can induce C 2 H 2 to enter the channels in an optimal mode perpendicular to the channel. As expected, it facilitates to guarantee the continuous activation of C 2 H 2 at the Ru single-atom active sites. Thus, constructing such MOF-encaged Ru single atoms for the simultaneous adsorption and activation of C 2 H 2 could provide a new paradigm for designing MOF-based catalysts through tailor-made differences in MOF structures.…”
Section: Introductionmentioning
confidence: 77%
“…Considering that the angle at which C 2 H 2 molecules enter the encapsulated channels could also affect its adsorption efficiency, a dual-driven adsorption strategy of nanotraps co-controlled by both factors (binding sites and entry modes) was introduced, which can induce C 2 H 2 to enter the channels in an optimal mode perpendicular to the channel. As expected, it facilitates to guarantee the continuous activation of C 2 H 2 at the Ru single-atom active sites. Thus, constructing such MOF-encaged Ru single atoms for the simultaneous adsorption and activation of C 2 H 2 could provide a new paradigm for designing MOF-based catalysts through tailor-made differences in MOF structures.…”
Section: Introductionmentioning
confidence: 77%
“…In addition to the diffraction peaks of Si and CuO, there appears a new peak at 2 θ = 51.8°, which is indexed to the diffraction of the (311) plane of the η‐phase Cu 3 Si, [ 36 ] indicating the formation of the alloyed Cu 3 Si species through the diffusion of Cu and Si during the reaction, in agreement with the previous studies. [ 9,26–28 ] Furthermore, the peak intensity of Cu 3 Si on Cu 2 O@CuO HIMCs is obviously higher than those of the catalyst‐free case, Cu 2 O HIMCs, and Cu 2 O@CuO NPs, suggesting that Cu 2 O@CuO HIMCs are much easier to form the Cu 3 Si phase with Si, which may be due to its unique structural characteristics mentioned above. The SEM observation (Figure S26, Supporting Information) further confirms that the extent of the Si etching on Cu 2 O@CuO HIMCs is most severe.…”
Section: Resultsmentioning
confidence: 99%
“…[ 25 ] This process generates a large amount of by‐product silicon tetrachloride (SiCl 4 or STC), and thus improving the TCS selectivity and yield to reduce its manufacturing cost is highly demanded. [ 9,26–28 ] This work demonstrates that Cu 2 O@CuO HIMCs can significantly enhance the Si conversion and TCS selectivity in Si hydrochlorination compared to the catalysts with flat surfaces and nanostructured forms.…”
Section: Introductionmentioning
confidence: 87%
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