Isolated Spin Qubits in SiC with a High-Fidelity Infrared Spin-to-Photon Interface

Christle, David J.; Klimov, Paul V.; Casas, Charles F. de las; Szász, Krisztián; Ivády, Viktor; Jokubavičius, Valdas; Hassan, Jawad; Syväjärvi, Mikael; Koehl, William F.; Ohshima, Takeshi; Són, Nguyên Tiên; Janzén, Erik; Gali, Ádám; Awschalom, D. D.

doi:10.1103/physrevx.7.021046

Cited by 191 publications

(310 citation statements)

References 86 publications

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“…To corroborate the presence of Purcell enhancement, we directly measured excited state lifetimes with the cavity on and off resonance with the VV 0 . Using resonant excitation pulses from an electro-optic modulator, we observe an off-resonance lifetime of = 15.7 ± 0.3 (consistent with bulk measurements 16 ) and an on-resonance lifetime of = 5.3 ± 0.1 (Fig. 3b).…”

supporting

confidence: 84%

“…4a). This contrast level is significantly higher than the typical 10-15% observed for off-resonant Rabi oscillations 5 , but below the ~94-98% levels observed with resonant excitation 16,41,44 . This indicates that individual optical spin transitions are moderately selective, but still display a spectral overlap from the ~4-5 GHz PLE optical linewidths broadened from spectral diffusion.…”

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confidence: 54%

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Purcell Enhancement of a Single Silicon Carbide Color Center with Coherent Spin Control

et al. 2020

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Silicon carbide has recently been developed as a platform for optically addressable spin defects. In particular, the neutral divacancy in the 4H polytype displays an optically addressable spin-1 ground state and near-infrared optical emission. Here, we present the Purcell enhancement of a single neutral divacancy coupled to a photonic crystal cavity. We utilize a combination of nanolithographic techniques and a dopant-selective photoelectrochemical etch to produce suspended cavities with quality factors exceeding 5,000. Subsequent coupling to a single divacancy leads to a Purcell factor of ~50, which manifests as increased photoluminescence into the zero-phonon line and a shortened excited-state lifetime. Additionally, we measure coherent control of the divacancy ground state spin inside the cavity nanostructure and demonstrate extended coherence through dynamical decoupling. This spin-cavity system represents an advance towards scalable long-distance entanglement protocols using silicon carbide that require the interference of indistinguishable photons from spatially separated single qubits.

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confidence: 54%

Purcell Enhancement of a Single Silicon Carbide Color Center with Coherent Spin Control

et al. 2020

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“…Alternative qubits in technologically mature materials for various quantum technology application are much sought after. One of the most favorable candidates is silicon carbide with hosting divacancy defects that consist of adjacent carbon and silicon vacancies in the SiC lattice 1,[7][8][9][10] . This defect exhibits very similar properties to those of NV center in diamond, including the optical coherent control of this S = 1 center 1 , and a relatively high contrast optical readout at resonant excitation 10 , but it emits in NIR region (around 1100 nm of wavelength) not far from the telecom wavelengths.…”

Section: Introductionmentioning

confidence: 99%

“…One of the most favorable candidates is silicon carbide with hosting divacancy defects that consist of adjacent carbon and silicon vacancies in the SiC lattice 1,[7][8][9][10] . This defect exhibits very similar properties to those of NV center in diamond, including the optical coherent control of this S = 1 center 1 , and a relatively high contrast optical readout at resonant excitation 10 , but it emits in NIR region (around 1100 nm of wavelength) not far from the telecom wavelengths. NIR emission is also desirable for in vivo fluorescent biosensor applications where fabrication of nanocrystalline SiC hosting NIR color centers were already suggested to this end 11,12 .…”

Section: Introductionmentioning

confidence: 99%

Characterization and formation of NV centers in 3C, 4H , and 6H SiC: An ab initio study

et al. 2017

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Fluorescent paramagnetic defects in solids have become attractive systems for quantum information processing in the recent years. One of the leading contenders is the negatively charged nitrogen-vacancy defect in diamond with visible emission but alternative solution in technologically mature host is an immediate quest for many applications in this field. It has been recently found that various polytypes of silicon carbide (SiC), that are standard semiconductors with wafer scale technology, can host nitrogen-vacancy defect (NV) that could be an alternative qubit candidate with emission in the near infrared region. However, it is much less known about this defect than its counterpart in diamond. The inequivalent sites within a polytype and the polytype variations offer a family of NV defects. However, there is an insufficient knowledge on the magneto-optical properties of these configurations. Here we carry out density functional theory calculations, in order to characterize the numer ous forms of NV defects in the most common polytypes of SiC including 3C, 4H and 6H, and we also provide new experimental data in 4H SiC. Our calculations mediate the identification of individual NV qubits in SiC polytypes. In addition, we discuss the formation of NV defects in SiC with providing detailed ionization energies of NV defect in SiC which reveals the critical optical excitation energies for ionizing this qubits in SiC. Our calculations unravel the challenges to produce NV defects in SiC with a desirable spin bath.

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“…The defect labeled DV (0) [81] (figure 4(C)) quantum properties were studied in 4H-SiC and associated to the PL1-PL4 lines in [53,55,[82][83][84][85][86]. It is currently associated with an S=1 V Si V C (0) , with ZPLs corresponding to the 4 non-equivalent sites, as following, PL1 occupying the hh site, PL2 kk site, PL3 kh, and PL4 hk site [41,42].…”

Section: Quantum Properties Of Silicon Carbide Color Centers (Ab Initmentioning

confidence: 99%

Silicon carbide color centers for quantum applications

2020

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Silicon carbide has recently surged as an alternative material for scalable and integrated quantum photonics, as it is a host for naturally occurring color centers within its bandgap, emitting from the UV to the IR even at telecom wavelength. Some of these color centers have been proved to be characterized by quantum properties associated with their single-photon emission and their coherent spin state control, which make them ideal for quantum technology, such as quantum communication, computation, quantum sensing, metrology and can constitute the elements of future quantum networks. Due to its outstanding electrical, mechanical, and optical properties which extend to optical nonlinear properties, silicon carbide can also supply a more amenable platform for photonics devices with respect to other wide bandgap semiconductors, being already an unsurpassed material for high power microelectronics. In this review, we will summarize the current findings on this material color centers quantum properties such as quantum emission via optical and electrical excitation, optical spin polarization and coherent spin control and manipulation. Their fabrication methods are also summarized, showing the need for on-demand and nanometric control of the color centers fabrication location in the material. Their current applications in single-photon sources, quantum sensing of strain, magnetic and electric fields, spin-photon interface are also described. Finally, the efforts in the integration of these color centers in photonics devices and their fabrication challenges are described.proved to host these types of color centers, we can now determine that the material has approached the quality needed for quantum applications development.The first bulk material studied for applications in quantum technology is diamond. It was possible to isolate single color centers and determine their role for application in quantum technologies. As an example, the nitrogen-vacancy (NV) center [10], hosted by the diamond matrix, has become the leading color center in applications such as quantum sensing [11], which is a more achievable application on the road map towards quantum networks. Further, other color centers such as the Germanium vacancy (GeV) [12] and the siliconvacancy (SiV) [13] in diamond proved to have an enormous potential for quantum optical spin-photon interface due to their narrow bandwidth emission [14]. The wide bandgap of the diamond, together with its weak spinorbit coupling and diluted nuclear-spin bath, gives to diamond color centers a remarkable spin coherence, and isotope engineering can enhance it further, due to the possibility of growing highly pure samples [15]. SiC also enjoys most of these properties, and benefits from mature production protocols on a large scale which are available for silicon, excellent nanofabrication quality [16], and capability of ion implantation without the side effects typical of the diamond, such as graphitization during irradiation [17]. However, diamond has some limitations in this respect in...

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Isolated Spin Qubits in SiC with a High-Fidelity Infrared Spin-to-Photon Interface

Cited by 191 publications

References 86 publications

Purcell Enhancement of a Single Silicon Carbide Color Center with Coherent Spin Control

Purcell Enhancement of a Single Silicon Carbide Color Center with Coherent Spin Control

Characterization and formation of NV centers in 3C, 4H , and 6H SiC: An ab initio study

Silicon carbide color centers for quantum applications

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