Isolated quantum emitters originating from defect centers in a ZnSe/ZnMgSSe heterostructure

Кривобок, В. С.; Nikolaev, S. N.; Chentsov, S. I.; Onishchenko, E. E.; Багаев, В. С.; Козловский, В. И.; Sorokin, Sergey; Sedova, I. V.; Gronin, S. V.; Ivanov, S. V.

doi:10.1134/s0021364016140095

Cited by 8 publications

(2 citation statements)

References 9 publications

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“…A shoulder at higher energy, arising upon the increase of excitation power, corresponds to free QW excitons, X hh . Its position is consistent with a resonance in the reflectivity spectra of similar structures . The PL peaks related to the excitons bound to the SF planes are red shifted with respect to the free exciton peak by (22–28) meV for the wide QW and by (12–16) meV for the narrower one, whose μ ‐PL spectra are shown for comparison in Figure (f).…”

supporting

confidence: 75%

Exciton Bound to 1D Intersection of Stacking Fault Plane with a ZnSe Quantum Well

Smirnov

Belyaev

Kirilenko

et al. 2018

Physica Rapid Research Ltrs

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Emerging part of condensed matter science, which deals with the systems of extreme two-dimensionality, renews the interest in natural 2D objects such as planar stacking faults (SFs) in semiconductor crystals. We report on the observation of an excitonic state localized at the 1D intersection of the SF with a high quality ZnSe quantum well (QW). The micro-photoluminescence measurements are performed in a specimen used for preceding transmission electron microscopy studies. We demonstrate that the observed narrow lines are polarized along SFs and their linewidths depend on the SFs length. For short SFs, the linewidth can be as low as 0.15 meV. Using the combination of the effective mass approach and the density functional theory calculations we show that the exciton localization is due to the intrinsic electric field inside the SF, which also leads to a spatial separation of electron and hole in the exciton. The 1D intersection of perfect natural and artificial 2D objects can serve as a promising playground for the study of subtle excitonic effects in single defects.

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supporting

confidence: 75%

Exciton Bound to 1D Intersection of Stacking Fault Plane with a ZnSe Quantum Well

Smirnov

Belyaev

Kirilenko

et al. 2018

Physica Rapid Research Ltrs

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“…Wide-band gap ZnSe quantum dots (QDs) have been shown with great potential applications in optoelectronic nano-devices [1], biological markers [2], and solar cells [3,4]. However, the surface defects and the rapid recombination of photo-generated electronhole pairs result in low conversion efficiency and limit their practical applications [5,6]. Many approaches [7][8][9][10] have been applied on the surface of ZnSe QDs for reducing the surface defects by packaging a matching shell material, and for reducing rapid recombination by linking organic ligand-molecules.…”

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confidence: 99%

Enhancement effect of defect fluorescence of ZnSe quantum dots on a heterojuction of ZnSe quantum dots and gold nanoparticles

Bai

Hao

Huang

et al. 2017

Methods Appl. Fluoresc.

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We studied an enhancement effect of defect fluorescence of ZnSe quantum dots (QDs) on a heterojunction of ZnSe QDs and gold nanoparticles. The photoluminescence (PL) of Au/ZnSe heterojunction is excited by using a 150 nm diameter ultraviolet laser spot of a scanning near-field optical microscope. Owing to the charge transfer of photon-generated carriers from ZnSe QDs, the enhanced PL effect is observed, which results from the increase of the built-in electric field to hinder the electron transfer to gold nanoparticles and is trapped by the defect states of ZnSe QDs. The broadening of defect fluorescence spectra and the reduction of excitonic fluorescence in multi-heterojunction of ZnSe QDs and gold nanoparticles are also observed which is attributed to an increase of their contact areas. We believe that enhanced defect fluorescence method described in this paper have potential applications in forming uniform optoelectronic heterojunction in controlling and boosting fluorescent efficiency of weak PL devices.

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Separation of Quantum Emitters Produced by Single Donor–Acceptor Pairs Under Laser Excitation

et al. 2019

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Isolated quantum emitters originating from defect centers in a ZnSe/ZnMgSSe heterostructure

Cited by 8 publications

References 9 publications

Exciton Bound to 1D Intersection of Stacking Fault Plane with a ZnSe Quantum Well

Exciton Bound to 1D Intersection of Stacking Fault Plane with a ZnSe Quantum Well

Enhancement effect of defect fluorescence of ZnSe quantum dots on a heterojuction of ZnSe quantum dots and gold nanoparticles

Separation of Quantum Emitters Produced by Single Donor–Acceptor Pairs Under Laser Excitation

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