Abstract:We present a systematic study of isolated hydrogen in diverse forms of ZrO 2 (zirconia), both undoped and stabilized in the cubic phase by additions of transition-metal oxides (Y 2 O 3 , Sc 2 O 3 , MgO, CaO). Hydrogen is modeled by using muonium as a pseudoisotope in muon-spin spectroscopy experiments. The muon study is also supplemented with first-principles calculations of the hydrogen states in scandia-stabilized zirconia by conventional density-functional theory (DFT) as well as a hybrid-functional approac… Show more
“…There are slight variations for the low temperature value of the depolarization rate, both for different materials and for the same material (CIGS) at different muon implantation energies, suggesting that there is an additional contribution to the diamagnetic signal. In recent experiments on zirconia [15] a slowly relaxing paramagnetic signal was observed. This signal is attributed to a weakly bound muonium state with an extremely small average hyperfine interaction.…”
“…In this configuration, the muon may exist as positive state (Mu + ) or as muonium (Mu 0 bound ). This latter state is paramagnetic but its hyperfine interaction is orders of magnitude smaller than the vacuum value, and may be barely distinguishable from the diamagnetic state [15,16].…”
Section: Introductionmentioning
confidence: 94%
“…(iii) Negative muonium, Mu − ; this state is predicted in theoretical calculations [15,[17][18][19][20] but its formation probability is small compared with other charged states since the formation of Mu − is a two-stepped process requiring the capture of two electrons in the implantation, an unlikely event.…”
Thin films and p-n junctions for solar cells based on the absorber materials Cu(In,Ga)Se 2 and Cu 2 ZnSnS 4 were investigated as a function of depth using implanted low energy muons. The most significant result is a clear decrease of the formation probability of the Mu + state at the heterojunction interface as well as at the surface of the Cu(In,Ga)Se 2 film. This reduction is attributed to a reduced bonding reaction of the muon in the absorber defect layer at its surface. In addition, the activation energies for the conversion from a muon in an atomiclike configuration to a anion-bound position are determined from temperature-dependence measurements. It is concluded that the muon probe provides a measurement of the effective surface defect layer width, both at the heterojunctions and at the films. The CIGS surface defect layer is crucial for solar-cell electrical performance and additional information can be used for further optimizations of the surface.
“…There are slight variations for the low temperature value of the depolarization rate, both for different materials and for the same material (CIGS) at different muon implantation energies, suggesting that there is an additional contribution to the diamagnetic signal. In recent experiments on zirconia [15] a slowly relaxing paramagnetic signal was observed. This signal is attributed to a weakly bound muonium state with an extremely small average hyperfine interaction.…”
“…In this configuration, the muon may exist as positive state (Mu + ) or as muonium (Mu 0 bound ). This latter state is paramagnetic but its hyperfine interaction is orders of magnitude smaller than the vacuum value, and may be barely distinguishable from the diamagnetic state [15,16].…”
Section: Introductionmentioning
confidence: 94%
“…(iii) Negative muonium, Mu − ; this state is predicted in theoretical calculations [15,[17][18][19][20] but its formation probability is small compared with other charged states since the formation of Mu − is a two-stepped process requiring the capture of two electrons in the implantation, an unlikely event.…”
Thin films and p-n junctions for solar cells based on the absorber materials Cu(In,Ga)Se 2 and Cu 2 ZnSnS 4 were investigated as a function of depth using implanted low energy muons. The most significant result is a clear decrease of the formation probability of the Mu + state at the heterojunction interface as well as at the surface of the Cu(In,Ga)Se 2 film. This reduction is attributed to a reduced bonding reaction of the muon in the absorber defect layer at its surface. In addition, the activation energies for the conversion from a muon in an atomiclike configuration to a anion-bound position are determined from temperature-dependence measurements. It is concluded that the muon probe provides a measurement of the effective surface defect layer width, both at the heterojunctions and at the films. The CIGS surface defect layer is crucial for solar-cell electrical performance and additional information can be used for further optimizations of the surface.
“…In the past few years we have used muon spin spectroscopy in order to model the behavior of the isolated hydrogen impurity in dielectric oxides [13,[18][19][20][21][22][23]. These materials find increasing interest and application in modern electronic devices [24][25][26].…”
Section: Introductionmentioning
confidence: 99%
“…This work has been performed often in conjunction with ab initio DFT calculations on the same systems [27][28][29][30][31]. Many similarities have been found, and the typical signature of the acceptor configuration shows up as the almost free muonium in an interstitial site [5,6,13,18,20,28,[31][32][33], whereas the donor configuration typically appears as a shallow-donor state bound to oxygen [5][6][7][8]20,23]. However, significant unexplained differences have been found in particular with respect to the formation probabilities of the different states.…”
In implantation experiments, the implanted particle is shot with a certain energy into the material and comes to rest at a site which may not correspond to the final position. The rearrangements of the surrounding atoms to accommodate the particle, i.e., the reaction with the host atoms may require some time and lead to delayed formation of the final states. In the case of the implantation of positive muons, this rearrangement process can be followed on a timescale of nanoseconds to microseconds. A delay is expected if an energy barrier inhibits the prompt reaction. We note that the barrier height may change during the rearrangement of the lattice, thus giving rise to a two-dimensional potential profile for the conversion process. The barrier model describes the reaction path of the muon in analogy to the passage over a mountain with a saddle point. The passing over the saddle point corresponds to the lowest energy trajectory. As an example, we discuss the application of the barrier model to solid Lu 2 O 3 .
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