ISM 2.45 GHz band high-efficient 15 W GaN HEMT power amplifier: design validation

Góralczyk, Marcin; Wojtasiak, Wojciech

doi:10.1017/s1759078719000631

Cited by 4 publications

(3 citation statements)

References 12 publications

(9 reference statements)

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“…This model enabled obtaining assumed parameters of the Peaking stage from 3.6 GHz to 3.8 GHz. In amplifier simulations, the harmonic-tuned method was employed [49]. Note that the Main is operated in class AB, while the Peaking is the class C amplifier.…”

Section: B43 Rf Front-endmentioning

confidence: 99%

A Universal Hardware Platform for an LTE-Advanced Base Station Prototyping

Korpas

Rosolowski

Kajczuk³

et al. 2023

Electronics

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This paper presents a universal hardware platform (UHP) based on software defined radio (SDR) technology and developed to accelerate the prototyping and testing new hardware and algorithmic solutions for modern radio systems. There are two integrated transceivers and a baseband processor on the board. Thus, four complete RF transmitting and receiving channels, with observation paths for transmitted signals monitoring could be supported. Our platform can be operated in both time-division (TDD) and frequency-division (FDD) duplex schemes over a 300 MHz to 6 GHz frequency range with simultaneous synthesis and analysis in the bandwidth of up to 100 MHz. The radio system is formed by attaching an appropriate RF front-end to the UHP and uploading standard-specific software. As examples of possible UHP applications, two LTE-Advanced micro base stations for private networks with standard-defined RF front-ends operating in the LTE band B43 (3.6 GHz) with time duplex and the band B31 (450 MHz) in FDD mode are presented.

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Section: B43 Rf Front-endmentioning

confidence: 99%

A Universal Hardware Platform for an LTE-Advanced Base Station Prototyping

Korpas

Rosolowski

Kajczuk³

et al. 2023

Electronics

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“…This technique enhance the Power Added Efficiency (PAE), and the simulated value is 55% at 2.45 GHz, while the used GaN transistor could give a value of PAE over 65%. Another works on PA design were made with GaN transistor: such as PA design for radar in [5], using harmonic load network at 2.4 GHz; but also PA design using harmonic tuning at 2.45 GHz ISM frequency in [6]. In these works, good performances were reached but reflection coefficients values don't exceed -15 dB in schematic simulations.…”

Section: Introductionmentioning

confidence: 99%

GaN HEMT power amplifier design for 2.45 GHz wireless applications

Atchike,

Zbitou,

Oualkadi

et al. 2023

SAIEE Afr. Res. J.

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Electronic devices with high performances like Power Amplifiers (PA) are very important for Wireless communications. This paper proposes a design of a class AB power amplifier operating at 2.45 GHz, in the S-band frequency. The Cree's CG2H40045F GaN HEMT (High Electron Mobility Transistor) is used for this design. The Gallium Nitride (GaN) technology has been chosen in light of its advantageous properties such as high breakdown voltage, high band gap, as well as high thermal conditions. The paper investigates the different design trade-offs for finding a good balance between various key parameters of the PA (linearity, efficiency, and gain). A design approach has been proposed and the microstrip lines based on the Smith Chart tool available in ADS software have been used for the matching process. The class AB was selected to reach a good agreement between linearity and efficiency, provided by this class. After various process applications from DC characterization to simulations, the proposed design achieves a power added efficiency more than 50% at power saturation with a gain of 15 dB in schematic simulation. The layout dimensions are 55.5 x 64.45 mm 2 on PCB technology.

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“…The first two papers are devoted to the still-current topic of improvement of the efficiency of microwave power amplifiers. The first paper [1] focuses on the design of power amplifiers using a harmonic tuning method. The approach to designing and tuning of a power amplifier presented in the paper allowed the authors to achieve the output power of the amplifier to be 30% greater than the value specified by the manufacturer of the transistor used in the amplifier, providing still high gain and high power efficiency.…”

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confidence: 99%

Recent challenges and advances in microwave and radar techniques – MIKON 2018 special issue

Jędrzejewski

Weinmann

2019

Int. J. Microw. Wireless Technol.

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The 22nd International Microwave and Radar Conference (MIKON) 2018 was held in Poznan, the capital city of the Greater Poland region, on May 14-17, 2018. MIKON conferences have a long tradition of over 50 years and are constantly organized under the auspices of the Polish Academy of Sciences (PAN). In 1994, MIKON was transformed into a biennial international conference co-sponsored by the Institute of Electrical and Electronics Engineers (IEEE) and since 2002 also by the European Microwave Association (EuMA) and the European GAAS Association. Over the years, MIKON has become one of the major European conferences in the field of microwave, radar and wireless communication that brings together many experts from the above-mentioned areas. MIKON 2018 was organized by the MIKON Foundation and by the Warsaw University of Technology as the main conference of the 8th Microwave and Radar Week (MRW) 2018. The second conference within the MIKON 2018 was the 2018 Baltic URSI Symposium. MIKON 2018 was chaired by Professor Krzysztof Kulpa, and the chairman of MRW 2018 was Professor Józef Modelski. The total number of MRW 2018 participants was 375, representing 29 countries around the world. In all, 309 papers (211-MIKON, 98-URSI) were presented during 54 topical oral sessions and three poster sessions. Additionally, seven keynote speeches were delivered. The sessions concerned, among others, such aspects as antennas and antenna arrays, passive and active RF and microwave components, electromagnetic field theory, numerical techniques and simulations, microwave measurements, 5 G technologies and networks, passive radars, noise radars, radar imaging, radar signal processing, tracking, direction of arrival techniques, RCS measurements, radio astronomy and space technologies, infrared and terahertz technologies, photonics, and computer vision. Moreover, four tutorials on highefficiency RF and microwave power amplifiers, aperture synthesis in radar technologies, 5 G technologies, and noise in linear circuits were held during the conference.

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ISM 2.45 GHz band high-efficient 15 W GaN HEMT power amplifier: design validation

Cited by 4 publications

References 12 publications

A Universal Hardware Platform for an LTE-Advanced Base Station Prototyping

A Universal Hardware Platform for an LTE-Advanced Base Station Prototyping

GaN HEMT power amplifier design for 2.45 GHz wireless applications

Recent challenges and advances in microwave and radar techniques – MIKON 2018 special issue

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