Islanded system mode test of Kii-channel HVDC link and Tachibana-bay unit 1

Shimura, Y.; Hara, S.; Uehara, Naohisa

doi:10.1109/pesw.2001.917218

Cited by 3 publications

(1 citation statement)

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“…For HVDC transmission systems, there are few systems that operate at an almost constant rating, such as the Kii Channel HVDC transmission system. 41) In many © 2021 The Japan Society of Applied Physics cases, such as frequency conversion stations, the Hokkaido-Honshu direct current transmission system 8) , back-to-back converter, 42) and offshore wind direct current transmission system 12) , the electric power flow changes from time to time due to the generation and load balance at both ends, and the load factor of the converter also changes. Therefore, it is necessary to consider the load factor dependency of device losses in the conceptual design of converters.…”

Section: 33mentioning

confidence: 99%

13 kV SiC-DMOSFETs and body diodes for HVDC MMC converters

Nakayama

Kuroiwa

Yamaguchi

2021

Jpn. J. Appl. Phys.

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Power electronics utilizing SiC power devices will become key components in next-generation power systems based on renewable energy, which are becoming an urgent issue worldwide. In this study, the on-characteristics and switching characteristics of 13 kV SiC-double-implanted metal-oxide-semiconductor field-effect transistors (DMOSFETs) and their body diodes were measured. In particular, the carrier lifetime, which has a significant effect on electrical characteristics, was estimated from the dynamic characteristics of the body diodes. The short carrier lifetime resulted in a large on-state voltage and a small reverse recovery loss of the body diode. Moreover, a conceptual design of a modular multilevel converter-based high-voltage, large-capacity, and self-excited AC/DC converter with 13 kV SiC-DMOSFETs was conducted, and its characteristics were investigated. When the 13 kV SiC-DMOSFETs were applied, the ratio of the total device loss to the electricity power of the converter was 1.10%, which is a significant reduction of 50% compared with 2.17% when 6.5 kV Si-insulated gate bipolar transistors were used.

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Section: 33mentioning

confidence: 99%