Island Scaling in Strained Heteroepitaxy: InAs/GaAs(001)

Bressler‐Hill, V.; Varma, Shikha; Lorke, Axel; Nosho, B. Z.; Petroff, P. M.; Weinberg, W. H.

doi:10.1103/physrevlett.74.3209

Cited by 122 publications

(65 citation statements)

References 18 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The scaling law (3.2.3.6) has been confirmed by experimental observations of 2D island homoepitaxial growth of Fe/Fe(001) [115] and 2D InAs islands in the submonolayer regime on GaAs(001) [116,117], as well as KMC simulations [118,119]. Note that the scaling function f (s/s av ), which depends on the growth parameters, such as θ and F as well as T , enters Eq.…”

Section: Scaling Invariance Ansatzsupporting

confidence: 52%

“…(3.2.3.6), is a fundamental hypothesis for stochastic aggregation phenomena of randomly moving adatoms. Although its validity in some homoepitaxial growth systems has been demonstrated by both experimental observations [115][116][117] and computer simulations [118,119], its physical nature or origin is not properly understood yet. A number of investigators attempted to provide a physical explanation or meaning and to fix the scaling function f (s/s av ) in Eq.…”

Section: Scaling Invariance Ansatzmentioning

confidence: 99%

See 1 more Smart Citation

Self-assembly of InAs quantum dots on GaAs(001) by molecular beam epitaxy

Jin

2015

Front. Phys.

View full text Add to dashboard Cite

Currently, the nature of self-assembly of three-dimensional epitaxial islands or quantum dots (QDs) in a lattice-mismatched heteroepitaxial growth system, such as InAs/GaAs(001) and Ge/Si(001) as fabricated by molecular beam epitaxy (MBE), is still puzzling. The purpose of this article is to discuss how the self-assembly of InAs QDs in MBE InAs/GaAs(001) should be properly understood in atomic scale. First, the conventional kinetic theories that have traditionally been used to interpret QD self-assembly in heteroepitaxial growth with a significant lattice mismatch are reviewed briefly by examining the literature of the past two decades. Second, based on their own experimental data, the authors point out that InAs QD self-assembly can proceed in distinctly different kinetic ways depending on the growth conditions and so cannot be framed within a universal kinetic theory, and, furthermore, that the process may be transient, or the time required for a QD to grow to maturity may be significantly short, which is obviously inconsistent with conventional kinetic theories. Third, the authors point out that, in all of these conventional theories, two well-established experimental observations have been overlooked: i) A large number of “floating” indium atoms are present on the growing surface in MBE InAs/GaAs(001); ii) an elastically strained InAs film on the GaAs(001) substrate should be mechanically unstable. These two well-established experimental facts may be highly relevant and should be taken into account in interpreting InAs QD formation. Finally, the authors speculate that the formation of an InAs QD is more likely to be a collective event involving a large number of both indium and arsenic atoms simultaneously or, alternatively, a morphological/structural transformation in which a single atomic InAs sheet is transformed into a three-dimensional InAs island, accompanied by the rehybridization from the sp 2-bonded to sp 3-bonded atomic configuration of both indium and arsenic elements in the heteroepitaxial growth system.

show abstract

Section: Scaling Invariance Ansatzsupporting

confidence: 52%

Section: Scaling Invariance Ansatzmentioning

confidence: 99%

Self-assembly of InAs quantum dots on GaAs(001) by molecular beam epitaxy

Jin

2015

Front. Phys.

View full text Add to dashboard Cite

show abstract

“…Similar CdSe islands having a two-dimensional (2D) shape and a size of about 7 nm have been recently reported for MBE growth using migrationenhanced MBE mode [19]. Formation of uniform nanoislands can be explained by kinetic [20] or equilibrium models [21,22].…”

Section: Introductionmentioning

confidence: 99%

Quantum dots formed by ultrathin insertions in wide-gap matrices

et al. 2000

View full text Add to dashboard Cite

We report on experimental and theoretical studies on a new type of quantum-dot (QD) structures obtained using ultrathin, i.e. below the critical thickness for 2D±3D transition, strained narrow gap insertions in wide bandgap matrices. We concentrate on submonolayer (SML) or slightly above 1 ML CdSe insertions in a wide-gap II±VI matrices and give the ®rst results on ultrathin InGaN insertions in a GaN matrix. A discussion on detailed comparison of our original results with the results of other authors is presented. The formation of dense arrays (up to 10 12 cm 22 ) of nanoscale two-dimensional (2D) islands is revealed in processed high-resolution transmission electron microscopy images. In the case of stacked sheets of SML insertions, the islands in the neighboring sheets are formed predominantly in correlated or anticorrelated way for thinner and thicker spacer layers, respectively. Different polarization of photoluminescence (PL) emission recorded in edge geometry for vertically-uncoupled and coupled QDs con®rms the QD nature of excitons. By monitoring of sharp lines due to single QDs using cathodoluminescence the 3D con®nement is manifested. We demonstrate signi®cant squeezing of the QD exciton wavefunction in the lateral direction using magneto-optical experiments. We point to complete suppression of lateral motion of excitons bound to islands in case of wide-gap (ZnMgSSe) matrices, as follows from PL excitation studies. A resonant (0-phonon) lasing is observed in ultrathin CdSe insertions and proves the lifting of the k-selection rule for QD excitons. We show that lack of exciton screening in QDs up to high excitation densities enables strong resonant modulation of the refractive index in stacked ultrathin insertions and allows realization of resonant (excitonic) waveguiding and lasing. This enables the realization of a new type of heterostructure laser operating without external optical con®nement by layers having lower average refractive indices. Ultrahigh QD excitonic gain in dense arrays of stacked QDs allows a new type of surface-emitting laser. q 2000 Elsevier Science S.A. All rights reserved.

show abstract

“…[22] Dynamic scaling was first introduced to describe 2D islanding and was substantiated by computer simulations [20,21,22] and experimental studies both in homo [23,24] and heteroepitaxial [25,26,27] growth. Ebiko et al [28] were the first to show the applicability of Eq.…”

mentioning

confidence: 99%

How kinetics drives the two- to three-dimensional transition in semiconductor strained heterostructures: The case of InAs∕GaAs(001)

Arciprete

Placidi

Sessi

et al. 2006

Applied Physics Letters

View full text Add to dashboard Cite

The two- to three-dimensional growth mode transition in the InAs∕GaAs(001) heterostructure has been investigated by means of atomic force microscopy. The kinetics of the density of three-dimensional islands indicates two transition onsets at 1.45 and 1.59 ML of InAs coverage, corresponding to two separate families, small and large dots. According to the scaling analysis and volume measurements, the transition between the two families of quantum dots and the explosive nucleation of the large ones is triggered by the erosion of the step edges.

show abstract

Island Scaling in Strained Heteroepitaxy: InAs/GaAs(001)

Cited by 122 publications

References 18 publications

Self-assembly of InAs quantum dots on GaAs(001) by molecular beam epitaxy

Self-assembly of InAs quantum dots on GaAs(001) by molecular beam epitaxy

Quantum dots formed by ultrathin insertions in wide-gap matrices

How kinetics drives the two- to three-dimensional transition in semiconductor strained heterostructures: The case of InAs∕GaAs(001)

Contact Info

Product

Resources

About