Is thermal annealing a viable alternative for crystallisation in triethylsilylethynyl anthradithiophene organic transistors?

Muhieddine, Khalid; Lyttleton, Roman; Badcock, J.; Loth, Marsha A.; Stride, John A.; Anthony, John E.; Micolich, A. P.

doi:10.1080/21606099.2014.913270

Cited by 3 publications

(6 citation statements)

References 24 publications

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“…While films of a homogeneous thickness of 100 to 200 nm are observed for as prepared samples, the films transformed to the β-phase show separated grains of a width of several tens of micrometers and heights ranging from 400 nm up to 3 μm (see Figure S3, Supporting Information). The observation is consistent with polarization optical microscopy images showing continuous grains with a domain size of 500 μm and single-crystal-like needles of 20 μm width for the α and β phase, respectively. , We attribute this observation to a partial dewetting of the TES-ADT film during the β phase formation, resulting in a massive redistribution of the material.…”

Section: Resultssupporting

confidence: 89%

“…Hindrance of High Temperature Phase Nucleation. As mentioned in previous section and reports, 15,19,21,24 a temperature of 130 °C is sufficient to induce the β phase formation. Surprisingly, during our experiments it showed up that the phase transformation takes place only for thicker films, while for rather thin films the film becomes amorphous at the transition temperature instead.…”

Section: ■ Results and Discussionsupporting

confidence: 54%

“…The observation is consistent with polarization optical microscopy images showing continuous grains with a domain size of 500 μm and single-crystal-like needles of 20 μm width for the α and β phase, respectively. 19,21 We attribute this observation to a partial dewetting of the TES-ADT film during the β phase formation, resulting in a massive redistribution of the material.…”

Section: ■ Results and Discussionmentioning

confidence: 93%

“…The phase transition of TES-ADT to the HT phase, denoted as the β phase, was reported in several previous works dealing with thermal treatment of TES-ADT. 19,21 The phase transition takes place at temperatures of 120−130 °C, and the β phase is preserved after cooling thin films back to RT. Nevertheless, the lattice parameters of the β phase have not been previously determined.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

“…The β polymorph is retained after quenching samples to RT. Despite many works focusing on TES-ADT based device performance, ,,,,− the phase dynamics of TES-ADT and its polymorphic structure are still not fully understood.…”

Section: Introductionmentioning

confidence: 99%

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Annealing Behavior with Thickness Hindered Nucleation in Small-Molecule Organic Semiconductor Thin Films

Rozbořil

Broch

Resel

et al. 2019

Crystal Growth & Design

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We introduce a comprehensive overview of spontaneous and thermal induced structure changes in thin films of the high performance small-molecular organic semiconductor 5,11-bis(triethyl silylethynyl) anthradithiophene (TES-ADT). Most importantly, we find that nucleation of the TES-ADT high temperature β phase can be induced only for films thicker than a critical thickness, while it is hindered for thinner films. The described limited crystal phase nucleation, the circumstances of which are unique in the realm of small-molecule organic semiconductors, is explained in terms of a two step nucleation mechanism while taking into account the anisotropic surface energy of crystal grains. Furthermore, we identify changes in the optical absorption spectra observed during aging of as deposited films with a spontaneous transformation from the amorphous phase to the α2 phase via the α1 phase of TES-ADT. The transformation takes place on the time scale of several days. Finally, we determine temperature dependence of lattice parameters of the α1 and α2 phases and the lattice parameters of the β phase. Thermal expansion of the α1 phase is found to be much lower than that of the α2 phase.

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Section: Resultssupporting

confidence: 89%

Section: ■ Results and Discussionsupporting

confidence: 54%

Section: ■ Results and Discussionmentioning

confidence: 93%

Section: ■ Results and Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Annealing Behavior with Thickness Hindered Nucleation in Small-Molecule Organic Semiconductor Thin Films

Rozbořil

Broch

Resel

et al. 2019

Crystal Growth & Design

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show abstract

Highly Ordered Small Molecule Organic Semiconductor Thin-Films Enabling Complex, High-Performance Multi-Junction Devices

Sawatzki-Park,

Wang,

Kleemann

et al. 2023

Chem. Rev.

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Organic semiconductors have opened up many new electronic applications, enabled by properties like flexibility, low-cost manufacturing, and biocompatibility, as well as improved ecological sustainability due to low energy use during manufacturing. Most current devices are made of highly disordered thin-films, leading to poor transport properties and, ultimately, reduced device performance as well. Here, we discuss techniques to prepare highly ordered thin-films of organic semiconductors to realize fast and highly efficient devices as well as novel device types. We discuss the various methods that can be implemented to achieve such highly ordered layers compatible with standard semiconductor manufacturing processes and suitable for complex devices. A special focus is put on approaches utilizing thermal treatment of amorphous layers of small molecules to create crystalline thin-films. This technique has first been demonstrated for rubrenean organic semiconductor with excellent transport propertiesand extended to some other molecular structures. We discuss recent experiments that show that these highly ordered layers show excellent lateral and vertical mobilities and can be electrically doped to achieve high n- and p-type conductivities. With these achievements, it is possible to integrate these highly ordered layers into specialized devices, such as high-frequency diodes or completely new device principles for organics, e.g., bipolar transistors.

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Isothermal crystallization and time-temperature-transformation diagram of the organic semiconductor 5,11-bis(triethylsilylethynyl)anthradithiophene

Zeidell

Anthony

et al. 2021

J. Mater. Chem. C

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Is thermal annealing a viable alternative for crystallisation in triethylsilylethynyl anthradithiophene organic transistors?

Cited by 3 publications

References 24 publications

Annealing Behavior with Thickness Hindered Nucleation in Small-Molecule Organic Semiconductor Thin Films

Annealing Behavior with Thickness Hindered Nucleation in Small-Molecule Organic Semiconductor Thin Films

Highly Ordered Small Molecule Organic Semiconductor Thin-Films Enabling Complex, High-Performance Multi-Junction Devices

Isothermal crystallization and time-temperature-transformation diagram of the organic semiconductor 5,11-bis(triethylsilylethynyl)anthradithiophene

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