Is plasma unique? The presence of electrons and the importance of charge

Schram, DC Daan

doi:10.1088/0963-0252/18/1/014003

Cited by 17 publications

(15 citation statements)

References 56 publications

(78 reference statements)

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“…Typically, the number of produced radicals is larger than the number of ions. The regular estimate for more developed arcs, higher current atmospheric plasmas is P ∼ 3 [27]. For the lower current present case, a larger value is expected, i.e.…”

Section: Plasma Fundamental Considerationsmentioning

confidence: 65%

“…Thus, ionization is accompanied with dissocation and also direct dissociation occurs. As in atmospheric pressure plasmas the number of dissociations can be as high as 5-10 radicals per ion/electron production [27], we can assume around 20-40 eV per ionization. The produced radicals are mainly nitrogen and oxygen atoms resulting from ionization, dissociative recombination and re-ionization of the exited atomic radical.…”

Section: Plasma Fundamental Considerationsmentioning

confidence: 99%

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On the Possibilities of Straightforward Characterization of Plasma Activated Water

Hoeben

Ooij

Schram

et al. 2019

Plasma Chem Plasma Process

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Plasma activated deionized water from a hot arc 150 W PAW synthesizer has been analyzed for nitrite, nitrate and peroxide densities. Observed nitrite and nitrate levels are impressive, reaching several millimoles per liter at few hundred kiloJoules per liter energy input. Nitrate levels appear positively influenced by the applied energy density, together with a less pronounced increase in nitrite levels and limiting energy density for maximum peroxide levels. Active PAW cooling during synthesis appears to be essential for obtaining relevant peroxide levels and connected PAW activity. In addition to established laboratory diagnostics, alternative low access tools have been investigated for applicability of PAW characterization in offlab situations. Although no unique parameter exists to properly represent PAW activity, pH, oxidizing-reduction potential and electrical conductivity provide important insight, together with aqueous phase nitrite absorption spectrometry. Finally, classic acid-base titration has been applied to find access to the complex mixture of acidic reactive nitrogen species. Keywords Plasma activated water • Reactive oxygen species (ROS) • Reactive nitrogen species (RNS) • Reactive oxygen and nitrogen species (RONS) • Wet chemical analysis • Atmospheric plasma liquid interaction • Pulsed power plasma technology

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Section: Plasma Fundamental Considerationsmentioning

confidence: 65%

Section: Plasma Fundamental Considerationsmentioning

confidence: 99%

On the Possibilities of Straightforward Characterization of Plasma Activated Water

Hoeben

Ooij

Schram

et al. 2019

Plasma Chem Plasma Process

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“…At higher pressures one can expect higher electron densities (n e ), and correspondingly higher ion and radical formation. 48 Power densities achieved in microdischarges (kW.cm −3 to MW.cm −3 ) are orders of magnitude larger than those in conventional large-scale systems (W.cm −3 ). 49 Today, high-density plasma sources are now being designed and explored for utilization as future microplasma sources or arrays.…”

Section: Microplasma Sourcesmentioning

confidence: 99%

Cyclic Etch/Passivation-Deposition as an All-Spatial Concept toward High-Rate Room Temperature Atomic Layer Etching

Roozeboom

Bruele

Creyghton

et al. 2015

ECS J. Solid State Sci. Technol.

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Conventional (3D) etching in silicon is often based on the 'Bosch' plasma etch with alternating half-cycles of a directional Sietch and a fluorocarbon polymer passivation. Also shallow feature etching is often based on cycled processing. Likewise, ALD is time-multiplexed, with the extra benefit of half-reactions being self-limiting, thus enabling layer-by-layer growth in a cyclic process. To speed up growth rate, spatial ALD has been successfully commercialized for large-scale and high-rate deposition at atmospheric pressure. We conceived a similar spatially-divided etch concept for (high-rate) Atomic Layer Etching (ALEt). The process is converted from time-divided into spatially-divided by inserting inert gas-bearing 'curtains' that confine the reactive gases to individual injection slots in a gas injector head. By reciprocating substrates back and forth under such head one can realize the alternate etching/passivation-deposition cycles at optimized local pressures, without idle times needed for switching pressure or purging. Another improvement toward an all-spatial approach is the use of ALD-based oxide (Al 2 O 3 , SiO 2 , etc.) as passivation during, or gap-fill after etching. This approach, called spatial ALD-enabled RIE, has industrial potential in cost-effective back-endof-line and front-end-of-line processing, especially in patterning structures requiring minimum interface, line edge and fin sidewall roughness (i.e., atomic-scale fidelity with selective removal of atoms and retention of sharp corners). Today, the continuous doubling of the transistor count on planar microprocessor and memory chips in a two-year cadence has reached the point where Moore's Law (essentially an economic law) and Dennard's scaling (transistor and pitch dimensions) have approached their limits in 2D-scaling. The end of the planar device era was marked with the introduction in 2011 of the 22-nm Tri-Gate device.1,2 Figure 1 shows its design with gates surrounding the channel on three sides of vertical fins to improve gate delay.Today, at the emergence of the 10-nm technology node and the 50 th anniversary of Moore's Law, 3D device and integration solutions are being rapidly introduced both intra-chip, e.g., Gate-All-Around, 3 vertical NAND, 4 and inter-chip, e.g., 3D Through-Silicon Vias (TSVs). 5History of 3D etching.-Whereas the transistor design has been planar for most of its history, its periphery has been subjected to 3D design early on. One of the earliest 3D concepts has been the basic invention of 3D TSVs, already filed in 1958 by the famous W. Shockley, 6 cf. Fig. 2. Yet, in reality 3D Through-Silicon Via (TSV) technology took decades to accelerate the now rapidly growing stacked-chips and micro-electromechanical systems (MEMS) markets by enabling their interconnection in a 3D-integrated System-in-Package (i.e. the so-called 'More than Moore' domain). Today, the mainstream industrial technology for etching of both TSV and MEMS structures is ion-assisted etching or (Deep) Reactive Ion Etching. This method has become so ...

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“…Molecules and atoms are released from these surfaces, e.g. RF electrode and chamber walls, back into the gas phase by surface etching and by the association of ions and radicals at the surface forming new gas phase molecules [25,26]. These new molecules and atoms are a source in addition to the process gas and, thereby, change the plasma chemistry.…”

Section: Influence Of Surface Materialsmentioning

confidence: 99%

“…Measurements of the electron density and the dynamics of electrons in the plasma gas phase, however, remain challenging under PECVD conditions. An often neglected but relevant impact on the plasma chemistry is the influence of previously deposited films on substrate, electrode and chamber walls, which results in released atoms and molecules into the plasma by surface etching and surface association processes [25,26]. Although chamber wall conditioning by the deposition of a defined layer prior to the actual thin film deposition is a well-established method to prevent an unpredictable influence of the reactor wall condition on the film quality, the actual influence of the chamber wall condition on the plasma chemistry is an often unknown parameter.…”

Section: Introductionmentioning

confidence: 99%

Plasma monitoring and PECVD process control in thin film silicon-based solar cell manufacturing

Gabriel

Kirner

Klick³

et al. 2014

EPJ Photovolt.

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A key process in thin film silicon-based solar cell manufacturing is plasma enhanced chemical vapor deposition (PECVD) of the active layers. The deposition process can be monitored in situ by plasma diagnostics. Three types of complementary diagnostics, namely optical emission spectroscopy, mass spectrometry and non-linear extended electron dynamics are applied to an industrial-type PECVD reactor. We investigated the influence of substrate and chamber wall temperature and chamber history on the PECVD process. The impact of chamber wall conditioning on the solar cell performance is demonstrated.

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Is plasma unique? The presence of electrons and the importance of charge

Cited by 17 publications

References 56 publications

On the Possibilities of Straightforward Characterization of Plasma Activated Water

On the Possibilities of Straightforward Characterization of Plasma Activated Water

Cyclic Etch/Passivation-Deposition as an All-Spatial Concept toward High-Rate Room Temperature Atomic Layer Etching

Plasma monitoring and PECVD process control in thin film silicon-based solar cell manufacturing

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