Irreversible temperature quenching and antiquenching of photoluminescence of ZnS/CdS:Mn/ZnS quantum well quantum dots

Ding, Xing; Dai, Rucheng; Zhao, Zhi; Wang, Z.P.; Sun, Zhiguo; Zhang, Z.M.; Ding, Zejun

doi:10.1016/j.cplett.2015.02.049

Cited by 7 publications

(8 citation statements)

References 51 publications

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“…Here are some examples on the emission color, work temperature, and emission intensity as compared to their room-temperature intensity for typical highly efficient nitrides phosphors: AlN:Eu 2+ (blue, 240 °C, ∼50%), Sr 2 Si 5 N 8 :Eu 2+ (red, 150 °C, ∼86%), Ca-α-sialon (yellow, 230 °C, ∼60%), and β-sialon (green, 150 °C, ∼90%) . At higher temperature, some peculiar photoemission phenomena which always do not appear at room or lower temperature may show up along luminescence quenching processes, for example, (i) monotonic blue shift of photoemission in α-sialon:Yb 2+ , BaAl 2 Si 2 O 8 :Eu 2+ , CaWO 4 :Bi, and CaMoO 4 :Bi; (ii) coexistence of blue-shift and red-shift of Eu 2+ emission in Sr 2 Si 5 N 8 :Eu 2+ ; (iii) shift of multiple emissions toward different directions in ZnO; (iv) anomalous initial photoemission enhancement followed by subsequent quenching in colloidal quantum dots, LuVO 4 :Bi and KZnF 3 :Mn; (v) reversible or irreversible luminescence degradation in X2-Y 2 SiO 5 :Eu,Bi 1 or ZnS/CdS:Mn/ZnS, respectively; (vi) broadening line width of photoemission in YAG:Ce and Sr 8 (Si 4 O 12 )Cl 8 :Eu 2+ ; and (vii) temperature-dependent energy transfer from one dopant to another in Na 2 SrMg(PO 4 ) 2 :Eu 2+ ,Mn 2+ or from host to dopant in ScVO 4 :Bi, and so forth. Moreover, tunable emission colors can be achieved easily by controls over photoemission shift or relative intensity ratio of multiple emission bands.…”

Section: Introductionmentioning

confidence: 99%

Recoverable and Unrecoverable Bi³⁺-Related Photoemissions Induced by Thermal Expansion and Contraction in LuVO₄:Bi³⁺ and ScVO₄:Bi³⁺ Compounds

et al. 2016

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Most substances as thermodynamic law explicitly states will expand or contract upon heating or cooling, respectively, which sometimes may lead to changes in their crystallographic microstructures and therefore unexpected physicochemical and optoelectronic properties. Here, we report an efficient yellow photoemission from a compound of LuVO4:Bi3+, whose peak intensity and position after 11 rounds of yoyo experiments of heating and cooling can recover to their initial states. In sharp contrast, ScVO4:Bi3+, though crystallographically isomorphous to LuVO4, exhibits a completely different scenario, and it, submitted to the same thermal treatment, shows unrecoverable changes in both peak position and intensity of the red emission. In order to unravel why bismuth responds so differently upon the same thermal stimuli in the two isomorphous compounds, in situ high-temperature X-ray diffraction (HT-XRD), Rietveld refinement, static and dynamic high resolution photoluminescence, scanning electron microscopy, and single particle diagnosis techniques, as well as density functional theory (DFT) calculations have been employed to illustrate the microstructural changes along with environmental temperature. In situ HT-XRD measurements and consequent Rietveld refining analysis clearly illustrates that thermal expansion and contraction can induce permanent crystallographic microstructure changes, e.g., unrecoverable expansion of lattice cell in ScVO4:Bi3+ rather than LuVO4:Bi3+. Such expansion can be considered as an evidence for the removal of oxygen vacancy, which can be promoted by the accelerated oxygen diffusion rate as temperature increases. This, as DFT computation implies, can slightly increase the band gap of ScVO4:Bi3+, and it eventually leads to the unrecoverable blueshift and intensity loss of the red emission peak. The single particle diagnosis further reveals significant intensity reduction and peak shift for nearly half of the ScVO4:Bi3+ particles but not for all randomly selected LuVO4:Bi3+ particles. The diagnosis approach therefore provides a new strategy to distinguish and select the particles with desirable luminous intensity and color purity from a mass of powder mixture and in the meantime potentially gives new insights into unusual luminescence properties in phosphors.

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Section: Introductionmentioning

confidence: 99%

Recoverable and Unrecoverable Bi³⁺-Related Photoemissions Induced by Thermal Expansion and Contraction in LuVO₄:Bi³⁺ and ScVO₄:Bi³⁺ Compounds

et al. 2016

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“…5(a). The phenomenon of luminescence intensity increase with temperature rise is called negative thermal quenching (NTQ) [33, 34 and references therein], anomalous thermal quenching [35] or antiquenching [36]; the notion of critical temperature is introduced by Rechnikov [33]. It was observed that in the studied Cu2O single crystals value of critical temperature T0 varies in the 20-55 K limits depending on the sample, particular emission band and excitation light power.…”

Section: Sample Sc(111)mentioning

confidence: 99%

“…Previously NTQ of emission bands was observed in different materials and explained by different mechanisms: in doped GaN -by quenching of a competitive intense luminescence band or a nonradiative channel [34], in sandwiched single layer MoS2 -by raising radiative recombination rate of the excess delocalized carriers created from the carrier hopping from the shallow defect states to the band edges [35], in CdMnTe -by participation of intermediate states of impurities in recombination processes, in ZnO and CdMnTe -by presence of intermediate defect states and nonradiative channels [41][42]. Some authors explain NTQ by thermal activation of charge carriers and trapped excitons from shallow traps followed by their localization at radiative centers [31,36,43].…”

Section: Single Crystalsmentioning

confidence: 99%

Luminescence properties of epitaxial Cu2O thin films electrodeposited on metallic substrates and Cu2O single crystals

Trinkler¹,

Dai²,

Chang³

et al. 2023

Preprint

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Luminescent properties of epitaxial Cu2O thin films were studied in 10-300 K temperature range and compared with luminescent properties of Cu2O single crystals. Cu2O thin films were deposited epitaxially by the electrodeposition method on either Cu or Ag substrates at different processing parameters, which determined the epitaxial orientation relationships and encapsulated surface. Cu2O (100) and (111) single crystal samples were cut from a crystal rod grown by the floating zone method. Luminescence spectra of thin films contain the same emission bands as single crystals around 720, 810 and 910 nm, characterizing VO2+, VO+ and VCu defects, correspondingly. Additional emission bands, whose origin is under discussion, are observed around 650-680 nm, while the exciton features are negligibly small. The relative mutual contribution of the emission bands varies depending on the particular thin film sample. Existence of the domains of crystallites with different orientation determines the polarization of luminescence. PL of both Cu2O thin films and single crystals is characterized with negative thermal quenching in the low temperature region, the reason of this phenomenon is discussed.

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“…Since the number of charge traps may depend on the previous thermal and irradiation history, the resulting PL signals could be irreversible with temperature, 32 even leading to irreversible temperature antiquenching, as observed in some core-shell quantum dots. 33 We hence consider that the irreversible temperature antiquenching behavior observed in this work can also be interpreted in terms of the thermally activated trapping/ detrapping processes associated with certain deep traps. A schematic representation of the energy levels for the ground and excited states of the twofold-coordinated Si and the related deep trap states is shown in Fig.…”

mentioning

confidence: 95%

Enhanced ultraviolet emission and its irreversible temperature antiquenching behavior of twofold coordinated silicon centers in silica glass

nagayoshi

Uchino

2016

Applied Physics Letters

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It has been well documented that an oxygen divacancy center, or a twofold-coordinated Si center, in silica glass yields a singlet-to-singlet photoluminescence (PL) emission at 4.4 eV with a decay time of 4 ns. Although the 4.4-eV PL band is interesting in terms of a deep-ultraviolet light emitter, the emission efficiency has been too low to be considered for a practical application. In this work, we show that a highly luminescent silica glass, with an internal quantum yield of 68% for the 4.4-eV PL band at room temperature, can be prepared when micrometer-sized silica powders are heat treated at 1900 C under inert gas atmosphere by using a high-frequency induction heating unit equipped with a graphite crucible. We also show that the intensity of the 4.4-eV emission in the thus prepared silica glass exhibits an irreversible temperature antiquenching behavior in the temperature region below 320 K during heating-cooling cycles. The anomalous temperature dependencies of the 4.4-eV emission can be interpreted in terms of thermally activated trapping-detrapping processes of photoexcited electrons associated with deep trap states.

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Irreversible temperature quenching and antiquenching of photoluminescence of ZnS/CdS:Mn/ZnS quantum well quantum dots

Cited by 7 publications

References 51 publications

Recoverable and Unrecoverable Bi³⁺-Related Photoemissions Induced by Thermal Expansion and Contraction in LuVO₄:Bi³⁺ and ScVO₄:Bi³⁺ Compounds

Recoverable and Unrecoverable Bi³⁺-Related Photoemissions Induced by Thermal Expansion and Contraction in LuVO₄:Bi³⁺ and ScVO₄:Bi³⁺ Compounds

Luminescence properties of epitaxial Cu2O thin films electrodeposited on metallic substrates and Cu2O single crystals

Enhanced ultraviolet emission and its irreversible temperature antiquenching behavior of twofold coordinated silicon centers in silica glass

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Irreversible temperature quenching and antiquenching of photoluminescence of ZnS/CdS:Mn/ZnS quantum well quantum dots

Cited by 7 publications

References 51 publications

Recoverable and Unrecoverable Bi3+-Related Photoemissions Induced by Thermal Expansion and Contraction in LuVO4:Bi3+ and ScVO4:Bi3+ Compounds

Recoverable and Unrecoverable Bi3+-Related Photoemissions Induced by Thermal Expansion and Contraction in LuVO4:Bi3+ and ScVO4:Bi3+ Compounds

Luminescence properties of epitaxial Cu2O thin films electrodeposited on metallic substrates and Cu2O single crystals

Enhanced ultraviolet emission and its irreversible temperature antiquenching behavior of twofold coordinated silicon centers in silica glass

Contact Info

Product

Resources

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Recoverable and Unrecoverable Bi³⁺-Related Photoemissions Induced by Thermal Expansion and Contraction in LuVO₄:Bi³⁺ and ScVO₄:Bi³⁺ Compounds

Recoverable and Unrecoverable Bi³⁺-Related Photoemissions Induced by Thermal Expansion and Contraction in LuVO₄:Bi³⁺ and ScVO₄:Bi³⁺ Compounds