Irradiation of new optoelectronic components for HL-LHC data transmission links

Nasr-storey, S. Seif El; Détraz, S.; Olanterä, Lauri; Sigaud, Christophe; Soós, C.; Troska, J.; Vasey, F.

doi:10.1088/1748-0221/8/12/c12040

Cited by 7 publications

(3 citation statements)

References 4 publications

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“…As an example, with the upgrade of the LHC to high luminosity (HL-) LHC [1], components to be installed in the upgrading experiments will have to withstand a 1-MeV equivalent neutron fluence of at least 2 × 10 15 n/cm 2 and a total ionizing dose (TID) level of 1 MGy over the operational lifetime of ten years.So far, links based on both single-mode edge-emitting lasers [2] and multimode vertical-cavity surface-emitting lasers [3] are in use in the experiments at CERN. The drawback of laser diodebased technologies is their degradation due to displacement damage from particle fluence [4]. Because of this, alternatives for the most exposed areas in the HL-LHC experiments are being investigated for data transmission systems operating up to 10 Gb/s.…”

Section: Introductionmentioning

confidence: 99%

Investigation of the Influence of Temperature and Annealing on the Radiation Hardness of Silicon Mach–Zehnder Modulators

Kraxner

Détraz

Olanterä

et al. 2018

IEEE Trans. Nucl. Sci.

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Optical links are vital components in the data transmission systems of high energy physics (HEP) experiments at CERN. With the ever higher beam fluxes achieved by the Large Hadron Collider, the optical components have to withstand higher radiation levels and handle ever-increasing data volumes. To face these challenges, the use of silicon photonics (SiPh) Mach-Zehnder modulators (MZMs) in the next generation of optical transceivers for HEP experiments is currently being investigated. In this paper, the dependence of the radiation hardness of custom-designed SiPh MZMs on temperature is reported, including the observed improvement in radiation tolerance at low operating temperatures that are closer to the typical temperatures found in HEP experiments. Furthermore, postirradiation annealing measurements of the devices were performed. An effective annealing method has been found by applying a forward current to the MZMs, leading to an almost immediate and full recovery of the device after irradiation up to 3 MGy. This enhanced device recovery method could effectively increase the radiation hardness tremendously in applications with low dose rates and periodic shutdown times.

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Section: Introductionmentioning

confidence: 99%

Investigation of the Influence of Temperature and Annealing on the Radiation Hardness of Silicon Mach–Zehnder Modulators

Kraxner

Détraz

Olanterä

et al. 2018

IEEE Trans. Nucl. Sci.

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“…Specifically, devices and components installed in the inner-most detectors of the HL-LHC will have to withstand a Total Ionizing Dose (TID) greater than 10 MGy and a minimum 1 MeV-equivalent neutron fluence of more than 1.6 × 10 16 n/cm 2 . Traditional optical data transmission systems based on directly modulated lasers and photodiodes cannot sustain such high levels of radiation [2] and new systems and components must be identified in order to meet the challenge.…”

Section: Introductionmentioning

confidence: 99%

Ionizing Radiation Effects in Silicon Photonics Modulators

Lalović

Scarcella

Bulling

et al. 2022

IEEE Trans. Nucl. Sci.

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Silicon Photonics shows considerable potential as a radiation-hard technology for building the optical data transmission links for future high-energy physics experiments at CERN. Optical modulators are a key component of optical links, which will need to withstand radiation doses in excess of 10 MGy. The geometrical parameters and doping concentrations of two popular types of Silicon Photonics modulators, Mach-Zehnder and Ring Modulators, have been varied in order to study their impact on the device radiation tolerance. They were exposed to an X-ray beam to test their resistance to ionizing radiation. The Ring Modulator with the highest doping concentration is shown to be the most tolerant, showing no degradation in performance up to the highest dose of 11 MGy. Moreover, we report first evidence of the dependence of the radiation tolerance on the Ring Modulator operating temperature.

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“…The front-end part of the optical links for the high-luminosity upgrades of CERN experiments will rely on the VTRx+ [1], a radiation-tolerant TRx based on vertical cavity surface emitting lasers (VCSELs) and pin photodiodes (PD), and the low-power gigabit transceiver (lpGBT) [2], a radiation-tolerant application-specific integrated circuit (ASIC) developed at CERN that functions as a data serializer/deserializer. However, due to the radiation tolerance limitations of the VCSELs and discrete pin PDs [3], the VTRx+ cannot be installed in the innermost regions of the detectors. For this reason, a new generation of optical links with low power consumption and low material budget is needed to cope with the increase of data volume and radiation levels in the innermost regions of final run upgrades of the HL-LHC experiments and future accelerators, like the FCC.…”

Section: Introductionmentioning

confidence: 99%

Towards optical data transmission for high energy physics using silicon photonics

Prousalidi¹,

Bulling²,

Court³

et al. 2022

J. Inst.

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Future upgrades of CERN experiments will require low power optical data links to support ever-increasing data-rates at ever-higher radiation levels. Silicon photonics is a CMOS optoelectronic technology compatible with these requirements. We present the results of an optical transceiver proof of concept based on a silicon photonics integrated circuit coupled to existing radiation tolerant electronic ASICs.

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Irradiation of new optoelectronic components for HL-LHC data transmission links

Cited by 7 publications

References 4 publications

Investigation of the Influence of Temperature and Annealing on the Radiation Hardness of Silicon Mach–Zehnder Modulators

Investigation of the Influence of Temperature and Annealing on the Radiation Hardness of Silicon Mach–Zehnder Modulators

Ionizing Radiation Effects in Silicon Photonics Modulators

Towards optical data transmission for high energy physics using silicon photonics

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