2015
DOI: 10.1016/j.actamat.2014.07.057
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Irradiation-induced shrinkage of highly crystalline SiC fibers

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Cited by 39 publications
(17 citation statements)
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“…Nozawa et al report a major reduction in fiber/matrix interfacial debond stress and a mild reduction in interfacial frictional stress. A recent ion irradiation experiment by Kondo et al [35], showing a very significant differential swelling between the CVI SiC matrix and Hi-Nicalon Type S fiber at 573 K and 100 dpa, implies the development of strong tensile stress across the interface during irradiation at this temperature. The lack of post-linear flexural behavior and the lack of fiber pullout even with significant interfacial degradation enhances the already strong case for a loss of fiber toughness.…”
Section: Degradation Mechanismmentioning
confidence: 96%
“…Nozawa et al report a major reduction in fiber/matrix interfacial debond stress and a mild reduction in interfacial frictional stress. A recent ion irradiation experiment by Kondo et al [35], showing a very significant differential swelling between the CVI SiC matrix and Hi-Nicalon Type S fiber at 573 K and 100 dpa, implies the development of strong tensile stress across the interface during irradiation at this temperature. The lack of post-linear flexural behavior and the lack of fiber pullout even with significant interfacial degradation enhances the already strong case for a loss of fiber toughness.…”
Section: Degradation Mechanismmentioning
confidence: 96%
“…2(a) and 2(b). 19 It should be noted that the carbon ribbons was progressively reduced in third generation SiC fibers irradiated with 5 × 10 13 ions/cm 2 dose, as shown in Fig. 2(b), and completely disappeared surrounding the third generation SiC particle at 1.5 × 10 15 ions/cm 2 dose, as shown in Fig.…”
Section: Resultsmentioning
confidence: 81%
“…Owing to its excellent mechanical and structural properties, silicon carbide (SiC) has been proposed for structure and cladding materials for a nuclear and an aerospace environment. [1][2][3] In these harsh environments, however, the high-dose irradiation will induce swelling and creep in SiC-based components, degrading the mechanical property of the SiC and greatly decreasing the lifetime of the SiC-based components. 3 Functionally, owing to its superior electronic, optical, and physical properties, SiC is also an important wide-bandgap semiconductor material with applications in hightemperature, high-power, and high-frequency electronic devices.…”
Section: Introductionmentioning
confidence: 99%
“…Up to now, considerable research efforts have been made to explore the swelling in SiC after neutron irradiation [7][8][9] and ion implantation. 1,3,10 It is generally accepted that defects introduced by irradiation play an important role in the strain and swelling accumulation. Under varying irradiation conditions, including varying temperatures 2 or irradiation fluences, 11 the swelling changes greatly because of different types of defects formed under different irradiation conditions, i.e., point defects, defect clusters, voids, and bubbles.…”
Section: Introductionmentioning
confidence: 99%