Irradiation-induced gold silicide formation and stoichiometry effects in ion beam-mixed layer

Khalfaoui, R.; Benazzouz, C.; Guittoum, A.; Tabet, Nouar; Tobbeche, S.

doi:10.1016/j.vacuum.2006.02.008

Cited by 14 publications

(16 citation statements)

References 14 publications

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“…Au-Si alloy formation also occurs after room temperature Ar ion irradiation of thin Au films on Si [61]. A total mixing of an evaporated Au film on Si was observed for 200 keV Kr ion irradiation at room temperature with a fluence of 1 × 10 16 cm −2 [62], and also after MeV ion irradiation at room temperature [63]. In these studies, the mixing process starts with evaporated pure metal films, i.e., the highest possible metal concentration.…”

Section: Cu and Au Surfactantsmentioning

confidence: 92%

The role of phase separation for self-organized surface pattern formation by ion beam erosion and metal atom co-deposition

et al. 2012

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We investigate the ripple pattern formation on Si surfaces at room temperature during normal incidence ion beam erosion under simultaneous deposition of different metallic co-deposited surfactant atoms. The co-deposition of small amounts of metallic atoms, in particular Fe and Mo, is known to have a tremendous impact on the evolution of nanoscale surface patterns on Si. In previous work on ion erosion of Si during co-deposition of Fe atoms, we proposed that chemical interactions between Fe and Si atoms of the steady-state mixed Fe x Si surface layer formed during ion beam erosion is a dominant driving force for self-organized pattern formation. In particular, we provided experimental evidence for the formation of amorphous iron disilicide. To confirm and generalize such chemical effects on the pattern formation, in particular the tendency for phase separation, we have now irradiated Si surfaces with normal incidence 5 keV Xe ions under simultaneous gracing incidence co-deposition of Fe, Ni, Cu, Mo, W, Pt, and Au surfactant atoms. The selected metals in the two groups (Fe, Ni, Cu) and (W, Pt, Au) are very similar regarding their collision cascade behavior, but strongly differ regarding their tendency to silicide formation. We find pronounced ripple pattern formation only for those co deposited metals (Fe, Mo, Ni, W, and Pt), which are prone to the formation of mono and disilicides. In contrast, for Cu and Au co-deposition the surface remains very flat, even after irradiation at high ion fluence. Because of the very different behavior of Cu compared to Fe, Ni and Au compared to W, Pt, phase separation toward amorphous metal silicide phases is seen as the relevant pro-

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Section: Cu and Au Surfactantsmentioning

confidence: 92%

The role of phase separation for self-organized surface pattern formation by ion beam erosion and metal atom co-deposition

et al. 2012

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“…In addition to this irradiation induced silicide formation in ion beam mixed layer of Au/Si(1 0 0) system was investigated by using 200 keV Kr + and 350 keV Xe + ions confirmed the formation of gold silicides at the surface of the mixed layers. Au 2 Si phase is obtained with Kr + irradiation whereas it is noticed that the formed phase with Xe + ions is more enriched in Si atoms [193].…”

Section: Au-simentioning

confidence: 93%

“…Moreover, the depth profiles of Au and Si atoms have been extracted in the However, the mixed layer obtained with the same fluence of Xe + ions, is not homogeneous in its composition. These profiles have shown a high Si content in contrast of the mixed layer formed by Kr irradiation [193]. Another example reveals a study of Au thin film on polymer irradiation, using 2 MeV Au + ions.…”

Section: Applicationsmentioning

confidence: 95%

Ion beam induced surface and interface engineering

Jain

Agarwal

2011

Surface Science Reports

256

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“…The formation of gold silicide was observed during ion beam irradiation of the gold-silicon mixed sample. 31,32 Gold is immiscible with silicon and has a eutectic temperature of 363 C at 19 wt. % silicon.…”

Section: Formation Mechanism and Silicide Formationmentioning

confidence: 99%

Nanopatterning of metal-coated silicon surfaces via ion beam irradiation: Real time x-ray studies reveal the effect of silicide bonding

El-Atwani

Gonderman

DeMasi

et al. 2013

Journal of Applied Physics

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We investigated the effect of silicide formation on ion-induced nanopatterning of silicon with various ultrathin metal coatings. Silicon substrates coated with 10 nm Ni, Fe, and Cu were irradiated with 200 eV argon ions at normal incidence. Real time grazing incidence small angle x-ray scattering (GISAXS) and x-ray fluorescence (XRF) were performed during the irradiation process and real time measurements revealed threshold conditions for nanopatterning of silicon at normal incidence irradiation. Three main stages of the nanopatterning process were identified. The real time GISAXS intensity of the correlated peaks in conjunction with XRF revealed that the nanostructures remain for a time period after the removal of the all the metal atoms from the sample depending on the binding energy of the metal silicides formed. Ex-situ XPS confirmed the removal of all metal impurities. In-situ XPS during the irradiation of Ni, Fe, and Cu coated silicon substrates at normal incidence demonstrated phase separation and the formation of different silicide phases that occur upon metal-silicon mixing. Silicide formation leads to nanostructure formation due the preferential erosion of the non-silicide regions and the weakening of the ion induced mass redistribution. V

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Irradiation-induced gold silicide formation and stoichiometry effects in ion beam-mixed layer

Cited by 14 publications

References 14 publications

The role of phase separation for self-organized surface pattern formation by ion beam erosion and metal atom co-deposition

The role of phase separation for self-organized surface pattern formation by ion beam erosion and metal atom co-deposition

Ion beam induced surface and interface engineering

Nanopatterning of metal-coated silicon surfaces via ion beam irradiation: Real time x-ray studies reveal the effect of silicide bonding

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