Irradiated integrated circuits dose-attenuation mapping using optically stimulated phosphors for packaging dosimetry

Dusseau, L.; Polge, G.; Albert, L; Magnac, Y.; Bessiere, J.C.; Fesquet, J.; Gasiot, J.

doi:10.1109/23.736517

Cited by 20 publications

(7 citation statements)

References 4 publications

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“…Figure 26 shows the fitting of N ft during thermal annealing at t = 140 • C using equation (14). Both terms and their contributions to N ft (t) are displayed.…”

Section: Isothermal Annealingmentioning

confidence: 99%

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Thermal and UV annealing of irradiated pMOS dosimetric transistors

Ristić¹

2009

J. Phys. D: Appl. Phys.

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p-channel metal-oxide-semiconductor (pMOS) dosimetric transistors are unique radiation dosimeters that have an extremely small size (the dimensions of the sensor element are less than 1 mm × 1 mm) and allow the measurement of dose in vivo in real time, which are especially important characteristics for radiotherapy. The isothermal, isochronal and UV annealing of pMOS dosimetric transistors have been investigated. The obtained results have shown that the high temperature annealing for thin and UV annealing for thick oxide, respectively, are very useful tools for radiation defect annealing. The spontaneous annealing is high, as a probable consequence of gate material (Al gate). The investigation has also shown that not only the threshold-voltage behaviour but also the behaviour of radiation defects in the oxide and at the oxide interface has to be known. The modelling of isothermal annealing at different temperatures has been performed.

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“…Figure 26 shows the fitting of N ft during thermal annealing at t = 140 • C using equation (14). Both terms and their contributions to N ft (t) are displayed.…”

Section: Isothermal Annealingmentioning

confidence: 99%

“…The disadvantages are a need for calibration in different radiation fields, relatively low resolution (starting from about 1 rad) and nonreusability. A great idea, proposed by Dusseau et al [14][15][16], is to integrate pMOS dosimetric transistors and optically stimulated luminescence (OSL) dosimeters.…”

Section: Introductionmentioning

confidence: 99%

Thermal and UV annealing of irradiated pMOS dosimetric transistors

Ristić¹

2009

J. Phys. D: Appl. Phys.

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“…Quantifying the amount of emitted light makes it possible to evaluate the energy absorbed by the material. It is interesting to note that, from an external point of view, OSL can be considered as an anti stokes phe-nonmenon since the wavelength stimulation is greater than the wavelength of the luminescence [2][3][4][5][6][7][8][9][10][11] .…”

Section: Basic Mechanismmentioning

confidence: 99%

A study on the real-time radiation dosimetry measurement system based on optically stimulated luminescence

et al. 2008

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“…Toutefois, la nécessité de diminuer les coûts a cependant contraint les équipementiers à utiliser des composants commerciaux (COTS, commercial off the shelf) tout en réduisant au maximum les marges de sécurité. Dans ce contexte, l'évaluation exacte de la dose reçue par une puce de silicium à l'intérieur de son boîtier et dans l'environnement complexe de la plate-forme du satellite constitue un gage de fiabilité (Dusseau et al, , 1998 .…”

Section: La Cartographie De Dose Osl Et Ses Applicationsunclassified