“…Such defects get located in the band gap and can drastically change the luminescence characteristics of materials by trapping charge carriers in localized energy levels. 2 Hence, by evaluating the kinetic parameters of the lattice using TL, the formation of electronic trap levels caused by dopant ions can be studied. Applications of TL include radiation dosimetry in the environment, medical diagnostics, radiology, cosmic radiation detection, bone dosimetry, toxicity studies, aeroplane safety, accidental dosimetry and personal dosimetric monitoring.…”
Section: Introductionmentioning
confidence: 99%
“…The emission is exhibited due to structural defects brought on by doping in the host lattice. Such defects get located in the band gap and can drastically change the luminescence characteristics of materials by trapping charge carriers in localized energy levels . Hence, by evaluating the kinetic parameters of the lattice using TL, the formation of electronic trap levels caused by dopant ions can be studied.…”
Section: Introductionmentioning
confidence: 99%
“…For UVC dosimetry, a lot of inorganic silicate based phosphors are researched because a silicate-based compound offers highly stable thermal properties, excellent homogeneity, high melting point (∼1700 °C) because of the silicon–oxygen covalent bonds throughout the crystal structure, and a large band gap due to being an insulator and being insoluble in water and other organic solvents. All these properties make it potentially suitable for optoelectronic, laser, and other high-tech applications. , There are various types of rare earth (RE) doped/undoped silicate phosphors including Bi 4 Si 3 O 12 :Dy 3+ , Li 2 SiO 3 , Mg 2 SiO 4 :Eu 3+ , lead-silicate glasses (PbO-SiO 2 ), Lu 2 SiO 5 :Pr 3+ , SrZrSi 2 O 7 :Ce 3+ , Sr 3 MgSi 2 O 8 : Eu 2+ ,Dy 3+ ,Mn 2+ , CaBaSiO 4 :Dy 3+ , Ba 5 Si 8 O 21 :Eu 2+ , Dy 3+ , and Cd 0.95 Eu 0.05 SiO 3 that are being successfully researched. When it comes to a similar structure (Li 2 MSiO 4 where M = divalent ions), very few works are reported on TL properties.…”
In the present study, the successful synthesis of a series of Sm 3+ doped Li 2 SrSiO 4 (LSS) phosphors using the solid-state reaction method was done. Phase identification, morphological and elemental analysis was investigated using X-ray diffraction, FESEM and EDX analyses, respectively. The experiments provided the proof of existence of constituent elements and surface morphology of phosphor under different magnification. Sm 3+ doped Li 2 SrSiO 4 phosphor's thermoluminescence properties are reported for the first time. Thermoluminescence experiments were conducted, and the highest intensity was observed at 1 mol % doping concentration of Sm 3+ contained a single glow curve at ∼238 °C. Furthermore, the study revealed that TL intensity exhibited a linear relationship with UV−C irradiation, and also, repeatability, fading, and filter analysis were probed. Fading tests, T m − T stop method and E a − T stop methods suggested the existence of a single trap. Various other methods were performed to evaluate the kinetic parameters and their reliability in estimating trapping parameters for a single glow curve. These findings collectively support the potential of LSS:Sm 3+ phosphor for UVC dosimetry, marking a significant contribution to the understanding of its TL properties and defect states.
“…Such defects get located in the band gap and can drastically change the luminescence characteristics of materials by trapping charge carriers in localized energy levels. 2 Hence, by evaluating the kinetic parameters of the lattice using TL, the formation of electronic trap levels caused by dopant ions can be studied. Applications of TL include radiation dosimetry in the environment, medical diagnostics, radiology, cosmic radiation detection, bone dosimetry, toxicity studies, aeroplane safety, accidental dosimetry and personal dosimetric monitoring.…”
Section: Introductionmentioning
confidence: 99%
“…The emission is exhibited due to structural defects brought on by doping in the host lattice. Such defects get located in the band gap and can drastically change the luminescence characteristics of materials by trapping charge carriers in localized energy levels . Hence, by evaluating the kinetic parameters of the lattice using TL, the formation of electronic trap levels caused by dopant ions can be studied.…”
Section: Introductionmentioning
confidence: 99%
“…For UVC dosimetry, a lot of inorganic silicate based phosphors are researched because a silicate-based compound offers highly stable thermal properties, excellent homogeneity, high melting point (∼1700 °C) because of the silicon–oxygen covalent bonds throughout the crystal structure, and a large band gap due to being an insulator and being insoluble in water and other organic solvents. All these properties make it potentially suitable for optoelectronic, laser, and other high-tech applications. , There are various types of rare earth (RE) doped/undoped silicate phosphors including Bi 4 Si 3 O 12 :Dy 3+ , Li 2 SiO 3 , Mg 2 SiO 4 :Eu 3+ , lead-silicate glasses (PbO-SiO 2 ), Lu 2 SiO 5 :Pr 3+ , SrZrSi 2 O 7 :Ce 3+ , Sr 3 MgSi 2 O 8 : Eu 2+ ,Dy 3+ ,Mn 2+ , CaBaSiO 4 :Dy 3+ , Ba 5 Si 8 O 21 :Eu 2+ , Dy 3+ , and Cd 0.95 Eu 0.05 SiO 3 that are being successfully researched. When it comes to a similar structure (Li 2 MSiO 4 where M = divalent ions), very few works are reported on TL properties.…”
In the present study, the successful synthesis of a series of Sm 3+ doped Li 2 SrSiO 4 (LSS) phosphors using the solid-state reaction method was done. Phase identification, morphological and elemental analysis was investigated using X-ray diffraction, FESEM and EDX analyses, respectively. The experiments provided the proof of existence of constituent elements and surface morphology of phosphor under different magnification. Sm 3+ doped Li 2 SrSiO 4 phosphor's thermoluminescence properties are reported for the first time. Thermoluminescence experiments were conducted, and the highest intensity was observed at 1 mol % doping concentration of Sm 3+ contained a single glow curve at ∼238 °C. Furthermore, the study revealed that TL intensity exhibited a linear relationship with UV−C irradiation, and also, repeatability, fading, and filter analysis were probed. Fading tests, T m − T stop method and E a − T stop methods suggested the existence of a single trap. Various other methods were performed to evaluate the kinetic parameters and their reliability in estimating trapping parameters for a single glow curve. These findings collectively support the potential of LSS:Sm 3+ phosphor for UVC dosimetry, marking a significant contribution to the understanding of its TL properties and defect states.
“…One of the most important defects related to applicative and basic research relevance is the Germanium Lone Pair Center (GLPC [19]) in Ge-doped silica, which is employed to produce one of the most common optical fiber types in telecommunications and sensing applications [20,21]. It is accepted that the GLPC is an electron donor and that its presence affects the sensitivity of the silica to radiation or laser exposure [11,16,22].…”
In this work we present a combined experimental and ab initio simulation investigation concerning the Germanium Lone Pair Center (GLPC), its interaction with molecular oxygen (O2), and evolution under irradiation. First, O2 loading has been applied here to Ge-doped optical fibers to reduce the concentration of GLPC point defects. Next, by means of cathodoluminescence in situ experiments, we found evidence that the 10 keV electron irradiation of the treated optical fibers induces the generation of GLPC centers, while in nonloaded optical fibers, the irradiation causes the bleaching of the pre-existing GLPC. Ab initio calculations were performed to investigate the reaction of the GLPC with molecular oxygen. Such investigations suggested the stability of the dioxagermirane (DIOG) bulk defect, and its back conversion into GLPC with a local release of O2 under irradiation. Furthermore, it is also inferred that a remarkable portion of the O2 passivated GLPC may form Ge tetrahedra connected to peroxy bridges. Such structures may have a larger resistance to the irradiation and not be back converted into GLPC.
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